NXP Semiconductors - BBY31T/R

  1. Home
  2. NXP Semiconductors - BBY31T/R
BBY31T/R by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BBY31T/R
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet BBY31T/R Datasheet
In Stock3,874
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Reverse Test Voltage: 28 V
Config: SINGLE
Diode Type: VARIABLE CAPACITANCE DIODE
Frequency Band: ULTRA HIGH FREQUENCY
Diode Cap Tolerance: 11.11 %
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Maximum Reverse Current: .01 uA
Nominal Diode Capacitance: 16.5 pF
Diode Element Material: SILICON
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
Minimum Breakdown Voltage: 30 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 85 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,874 - -

Popular Products

Category Top Products

MV104 by Onsemi

MV104

Onsemi

The Onsemi MV104 is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and breakdown voltage of 32 V. Ideal for RF applications due to its high-quality factor and precise capacitance control in communication systems.
BB187 by NXP Semiconductors

BB187

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4811 by Onsemi

1N4811

Onsemi

1N4811 by Onsemi is a varactor diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 55V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.000000005uA.
BB804R215 by NXP Semiconductors

BB804R215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB156T/R by NXP Semiconductors

BB156T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC211SP by Onsemi

SVC211SP

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 42 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Minimum Quality Factor: 100;
MV2108 by Onsemi

MV2108

Onsemi

MV2108 by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and max operating temperature of 150 °C. It is used in RF applications for frequency tuning due to its variable capacitance property.
MC209RLRA by Onsemi

MC209RLRA

Onsemi

MC209RLRA by Onsemi is a single varactor diode with 29pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for very high frequency applications due to its variable capacitance nature and cylindrical package style.
BB179B by NXP Semiconductors

BB179B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB910113 by NXP Semiconductors

BB910113

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MDX586M by Texas Instruments

MDX586M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 20;
BB153,135 by NXP Semiconductors

BB153,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV809LT1G by Onsemi

MMBV809LT1G

Onsemi

MMBV809LT1G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75 and nominal capacitance of 5.3 pF. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.
SVC236 by Onsemi

SVC236

Onsemi

SVC236 by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 70 and Variable Capacitance Diode Classification: ABRUPT. It operates in the VERY HIGH FREQUENCY band, has a Max Reverse Current of 0.05 uA, and is suitable for applications requiring high-frequency signal modulation.
1N5691 by Onsemi

1N5691

Onsemi

1N5691 by Onsemi is a varactor diode with 47pF nominal capacitance, abrupt variable capacitance classification, and 40V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor of 400 and low reverse current of 0.00000002uA.
BBY62T/R by NXP Semiconductors

BBY62T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
BB156 by NXP Semiconductors

BB156

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB804G212 by NXP Semiconductors

BB804G212

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MA46H120 by Tyco Electronics M/a-com

MA46H120

Tyco Electronics M/a-com

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV2109RL1 by Onsemi

MV2109RL1

Onsemi

MV2109RL1 by Onsemi is a single varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for applications requiring variable capacitance in RF circuits. With a breakdown voltage of 30V and power dissipation of 0.28W, this through-hole diode is ideal for high-frequency tuning in electronic devices.