NXP Semiconductors - 934057928235

  1. Home
  2. NXP Semiconductors - 934057928235
934057928235 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934057928235
Description VARIABLE CAPACITANCE DIODE;
Datasheet 934057928235 Datasheet
In Stock2,900
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,900 - -

Popular Products

Category Top Products

BB156/A2,115 by NXP Semiconductors

BB156/A2,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 16 pF; Terminal Finish: Tin (Sn);
BB145,115 by NXP Semiconductors

BB145,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB181T/R by NXP Semiconductors

BB181T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB154 by NXP Semiconductors

BB154

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC321SPA by Onsemi

SVC321SPA

Onsemi

The Onsemi SVC321SPA is a single variable capacitance diode with a min quality factor of 200 and nominal capacitance of 388.1 pF. It operates at a max temperature of 100 °C, making it suitable for applications requiring precise tuning in RF circuits. The diode's through-hole terminal form and silicon element material ensure reliable performance in various electronic devices.
SVC707-AL by Onsemi

SVC707-AL

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 15 V; Nominal Diode Capacitance: 19.9 pF; Terminal Finish: Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni); JESD-609 Code: e2;
BB417116 by NXP Semiconductors

BB417116

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
934042250135 by NXP Semiconductors

934042250135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB187/L,315 by NXP Semiconductors

BB187/L,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: 31.75 pF;
MV1638 by Onsemi

MV1638

Onsemi

MV1638 by Onsemi is a single varactor diode with 33pF capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.
1N5440 by Onsemi

1N5440

Onsemi

1N5440 by Onsemi is a Varactor Diode with a Min Quality Factor of 450, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 4.7 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a voltage range from -65 to 150 °C.
BB147 by NXP Semiconductors

BB147

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB202 by NXP Semiconductors

BB202

NXP Semiconductors

The NXP Semiconductors BB202 is a varactor diode with a max operating temperature of 85°C and min of -55°C. It has a max repetitive peak reverse voltage of 6V and diode capacitance ratio of 2.5, making it ideal for applications requiring variable capacitance in small outline packages.
BB187,115 by NXP Semiconductors

BB187,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB909B-AMMOPAK by NXP Semiconductors

BB909B-AMMOPAK

NXP Semiconductors

BB909B-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.
MDX580M by Texas Instruments

MDX580M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20;
TIV24 by Texas Instruments

TIV24

Texas Instruments

TIV24 by Texas Instruments is a single varactor diode with a min quality factor of 80, ideal for very high frequency applications. Featuring a nominal capacitance of 28 pF and max power dissipation of 0.25 W, it offers a breakdown voltage of 30 V. The diode's silicon element material and variable capacitance make it suitable for RF tuning circuits in communication systems.
MMVL409T1 by Onsemi

MMVL409T1

Onsemi

MMVL409T1 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and operates at a max power dissipation of 0.2 W. This single-configured diode in small outline package is ideal for RF tuning circuits.
MDX593N by Texas Instruments

MDX593N

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF;
MDX641 by Texas Instruments

MDX641

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 12 V; Minimum Quality Factor: 66; Nominal Diode Capacitance: .9 pF;