NXP Semiconductors - 934057928235

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934057928235 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934057928235
Description VARIABLE CAPACITANCE DIODE;
Datasheet 934057928235 Datasheet
In Stock2,900
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BB156,135 by NXP Semiconductors

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB190 by NXP Semiconductors

BB190

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB179,115 by NXP Semiconductors

BB179,115

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VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PC123 by Msi Electronics

PC123

Msi Electronics

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB181T/R by NXP Semiconductors

BB181T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB804GT/R by NXP Semiconductors

BB804GT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB804W215 by NXP Semiconductors

BB804W215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5704 by Onsemi

1N5704

Onsemi

1N5704 by Onsemi is a Varactor Diode with 33pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.
BBY39TRL by NXP Semiconductors

BBY39TRL

NXP Semiconductors

BBY39TRL by NXP Semiconductors is a surface-mount varactor diode featuring a dual-element configuration with a min capacitance ratio of 8. It comes in a small outline package made of plastic/epoxy, ideal for RF tuning applications. This silicon-based diode offers reliable performance in compact designs.
BB179-T by NXP Semiconductors

BB179-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MDX644 by Texas Instruments

MDX644

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 20 V; Minimum Quality Factor: 33; Nominal Diode Capacitance: .9 pF;
BBY40TRL by NXP Semiconductors

BBY40TRL

NXP Semiconductors

BBY40TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and signal processing tasks.
1SV229(TPH3,F) by Toshiba

1SV229(TPH3,F)

Toshiba

Toshiba's 1SV229(TPH3,F) is a single varactor diode with abrupt capacitance classification. Operating at ultra-high frequency, it has a nominal capacitance of 15 pF and min breakdown voltage of 15 V. Ideal for applications requiring precise variable capacitance in small outline packages.
934050200335 by NXP Semiconductors

934050200335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV1213-040LF by Skyworks Solutions

SMV1213-040LF

Skyworks Solutions

SMV1213-040LF by Skyworks Solutions is a single varactor diode with hyperabrupt classification. Operating in S band, it offers 19pF nominal capacitance and 16V breakdown voltage. Ideal for applications requiring variable capacitance diodes in surface mount packages.
1SV228(TPH3,F) by Toshiba

1SV228(TPH3,F)

Toshiba

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.
SVC208 by Onsemi

SVC208

Onsemi

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 60; Nominal Diode Capacitance: 30 pF; Maximum Repetitive Peak Reverse Voltage: 16 V;
BB909B116 by NXP Semiconductors

BB909B116

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SVC707 by Onsemi

SVC707

Onsemi

The Onsemi SVC707 is a single varactor diode with 19.92 pF capacitance and 15 V breakdown voltage. It is used in applications requiring variable capacitance, such as tuning circuits in RF communication systems. The diode's silicon element and through-hole terminal form make it suitable for high temperature environments up to 150 °C.
SVC270-TL-E by Onsemi

SVC270-TL-E

Onsemi

VARIABLE CAPACITANCE DIODE; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6;