GULL WING Varactor Diodes 1,161

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB804G235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.25 W

18 V

SILICON

1.65

BB150115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.2 W

30 V

SILICON

14

BB804-0

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

100 Cel

R-PDSO-G3

Not Qualified

SILICON

1.65

BB804R215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.25 W

18 V

SILICON

1.65

934040030115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

39.3 pF

e3

SILICON

14.5

BB158T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

39.3 pF

6.36 %

30 V

e3

SILICON

14.5

BB207,235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

15 V

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

81 pF

TO-236AB

6.17 %

e3

30

260

SILICON

2.6

BB901215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

SILICON

12

BB620

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES

30 V

SILICON

19.5

934040030135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

39.3 pF

e3

SILICON

14.5

BB148T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

Not Qualified

39.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

260

SILICON

14.5

BB153/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

10 %

32 V

e3

SILICON

13.5

BB804

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

Varactors

18 V

100 Cel

R-PDSO-G3

Not Qualified

44.25 pF

TO-236AB

5.08 %

18 V

40

260

SILICON

1.65

BB158-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

39.3 pF

6.36 %

30 V

SILICON

14.5

BB131,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

12.5 pF

36 %

30 V

e3

30

260

SILICON

12

BBY40TRL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Tin (Sn)

R-PDSO-G3

1

Not Qualified

e3

SILICON

8

BBY31TRL13

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

SILICON

BB134

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

17.5 pF

0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE

30 V

e3

SILICON

8.9

BB804Y

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

43.75 pF

1.71 %

18 V

SILICON

1.65

BB149,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

18.75 pF

4 %

e3

SILICON

8.2

934042230115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

10 %

32 V

e3

SILICON

13.5

934042240115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.2 W

1.6% MATCHED SETS AVAILABLE

30 V

SILICON

17.5

934042230135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

38.5 pF

10 %

32 V

e3

SILICON

13.5

BB901T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.00000001 uA

1

28 V

SMALL OUTLINE

Varactors

30 V

85 Cel

R-PDSO-G3

Not Qualified

1.055 pF

30 V

SILICON

12

BBY42235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

24 pF

SILICON

12

BB152T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

934018000115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

12.5 pF

36 %

e3

SILICON

12

BBY42TRL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

SILICON

12

BB151

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

TIN

R-PDSO-G2

Not Qualified

19.1 pF

e3

SILICON

1.45

BB157/TM

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

7.75 %

SILICON

11

BB156/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

16 pF

10 %

e3

30

260

SILICON

2.7

934056470215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

95 pF

TO-236AB

6.81 %

e3

SILICON

3.1

934057033115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

40.65 pF

7.75 %

e3

SILICON

14.85

934047520135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

TIN

R-PDSO-G2

Not Qualified

69 pF

EXCELLENT MATCHING TO 2% DMA

e3

SILICON

19.5

BB131-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

12.5 pF

36 %

30 V

e3

SILICON

12

BB132-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

67.5 pF

1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE

11.1 %

30 V

SILICON

24

BBY40T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

26 pF

30 V

e3

30

260

SILICON

5

BB152,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

35 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

57 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

8.77 %

32 V

e3

SILICON

20.6

BB154

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

18.5 pF

2% MATCHED SETS OF 15 DIODES ARE AVAILABLE

SILICON

9

BB134-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

Not Qualified

17.5 pF

0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE

30 V

SILICON

8.9

BB804-2

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

100 Cel

R-PDSO-G3

Not Qualified

SILICON

1.65

933505310215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

e3

30

260

SILICON

5

BB150

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

42 pF

9.52 %

SILICON

14

BBY40TRL13

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Tin (Sn)

R-PDSO-G3

1

Not Qualified

e3

SILICON

8

BB159

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

TIN

R-PDSO-G2

Not Qualified

18.75 pF

4 %

e3

SILICON

8.2

BB804-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.02 uA

2

16 V

SMALL OUTLINE

100 Cel

R-PDSO-G3

Not Qualified

44.25 pF

TO-236AB

5.08 %

18 V

SILICON

1.65

BBY39,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ULTRA HIGH FREQUENCY

.01 uA

2

28 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

16.5 pF

MATCHED PAIR AVAILABLE

TO-236AB

30 V

SILICON

8

BB804WT/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

2

SMALL OUTLINE

R-PDSO-G3

Not Qualified

44.75 pF

1.68 %

18 V

SILICON

1.65

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.