GULL WING Varactor Diodes 1,161

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB833E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		S BAND	1	SMALL OUTLINE	Varactors	35 V			Matte Tin (Sn)	R-PDSO-G2	1	Not Qualified	9.3 pF		8.11 %	35 V	e3	40	260	SILICON	11
BB669E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2			56.5 pF	CAPACITANCE MATCHED TO 2%	9.33 %					SILICON	14.5
BBY5503WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1		18.6 pF	LOW INDUCTANCE	5.66 %	16 V	e3			SILICON	2
BBY6605WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G3	1		68.7 pF	HIGH Q	4 %	12 V	e3			SILICON	5
BBY5103WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G2			5.4 pF		6.48 %	7 V				SILICON	1.55
BBY52-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	7 V				R-PDSO-G3	1	Not Qualified	1.85 pF	HIGH Q	22.22 %	7 V				SILICON	1.1
BBY52E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE						R-PDSO-G3		Not Qualified	1.85 pF			7 V				SILICON	1.1
BBY51-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	5.4 pF		6.48 %	7 V	e3		260	SILICON	1.55
BBY55-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	16 V				R-PDSO-G3	1	Not Qualified	15 pF	HIGH Q, LOW INDUCTANCE	6.67 %	16 V				SILICON	2
BBY58-06W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	10 V				R-PDSO-G3	1	Not Qualified	18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY66-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	12 V				R-PDSO-G3	1	Not Qualified	68.7 pF	HIGH Q	4 %	12 V				SILICON	5
BBY53E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V				R-PDSO-G3		Not Qualified	5.3 pF			6 V				SILICON	1.8
BBY55-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	16 V				R-PDSO-G2	1	Not Qualified	18.6 pF		5.66 %	16 V			260	SILICON	2
BBY66-05	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	12 V				R-PDSO-G3	1	Not Qualified	68.7 pF		4 %	12 V				SILICON	5
BBY55-03WE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	16 V				R-PDSO-G2		Not Qualified	18.6 pF		5.66 %	16 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BBY51-07	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	7 V			TIN LEAD	R-PDSO-G4		Not Qualified	5.3 pF		11.11 %	7 V	e0			SILICON	1.55
BBY53E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	5.3 pF			6 V	e3		260	SILICON	1.8
BBY5805WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3			18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY52	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V				R-PDSO-G3		Not Qualified	1.85 pF		22.22 %	7 V				SILICON	1.1
BBY51-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	7 V				R-PDSO-G2	1	Not Qualified	5.4 pF		6.48 %	7 V				SILICON	1.55
BBY53-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1	Not Qualified	5.3 pF		9.43 %	6 V	e3			SILICON	1.8
BB639CE6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified	39 pF	2.5% MATCHED SETS ARE AVAILABLE		35 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	13.5
BB639CE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	35 V				R-PDSO-G2		Not Qualified	39 pF	2.5% MATCHED SETS ARE AVAILABLE		35 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	13.5
BB639E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-G2		Not Qualified	38.3 pF				e3			SILICON	13.5
BBY5705WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE						R-PDSO-G3			17.5 pF	HIGH Q, LOW INDUCTANCE	5.98 %	10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	3
BBY5806WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3			18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY57-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	10 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	17.5 pF	HIGH Q, LOW INDUCTANCE	5.98 %	10 V	e3			SILICON	3
BB639CE7906	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1	Not Qualified	46.1 pF		1 %	30 V				SILICON	14.5
BBY58-04W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	10 V			TIN LEAD	R-PDSO-G3		Not Qualified	18.3 pF	LOW INDUCTANCE		10 V	e0			SILICON	2.8
BB639	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1	Not Qualified	38.3 pF	LOW INDUCTANCE	5.26 %	30 V				SILICON	9.8
BBY55-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	16 V			TIN	R-PDSO-G2	1	Not Qualified	18.6 pF	LOW INDUCTANCE	5.66 %	16 V	e3			SILICON	2
BBY5603WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE						R-PDSO-G2			40 pF	LOW INDUCTANCE	7.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.15
BBY52-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	7 V			TIN LEAD	R-PDSO-G2		Not Qualified	1.85 pF		22.22 %	7 V	e0			SILICON	1.1
BBY53-05W-H6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel	MATTE TIN	R-PDSO-G3	1		5.3 pF		9.43 %	6 V	e3		260	SILICON	1.8
BBY5305WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	2	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			5.3 pF		9.43 %	6 V				SILICON	1.8
BBY56-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE	Varactors	10 V				R-PDSO-G2	1	Not Qualified	40 pF	LOW INDUCTANCE	7.5 %					SILICON	2.15
BBY58-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-G2	1	Not Qualified	18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BB639E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-G2		Not Qualified	38.3 pF				e3			SILICON	13.5
BBY5806WH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON ANODE, 2 ELEMENTS	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3			18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY5803WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2			18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15
BBY51	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V				R-PDSO-G3	1	Not Qualified	5.4 pF		6.48 %	7 V				SILICON	1.55
BBY53	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	6 V	125 Cel	-55 Cel		R-PDSO-G3	1	Not Qualified	5.3 pF		9.43 %	6 V				SILICON	1.8
BBY51-07E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE					MATTE TIN	R-PDSO-G4		Not Qualified	5.3 pF			7 V	e3			SILICON	1.55
BBY57-03W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	10 V				R-PDSO-G2	1	Not Qualified	17.5 pF	LOW INDUCTANCE		10 V				SILICON	3
BBY52E6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE						R-PDSO-G3		Not Qualified	1.85 pF			7 V				SILICON	1.1
BBY5503WE6327BTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2			18.6 pF	LOW INDUCTANCE	5.66 %	16 V				SILICON	2
BBY51E6433	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	7 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	5.4 pF		6.48 %	7 V	e3		260	SILICON	1.55
BBY58-05W	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE	Varactors	10 V				R-PDSO-G3	1	Not Qualified	18.3 pF	LOW INDUCTANCE	4.89 %	10 V				SILICON	1.15

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.