NO LEAD Varactor Diodes 80

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  2. Varactor Diodes
Manufacturers
    • Api Technologies
    • Broadcom
    • Defense Logistics Agency
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • VARIABLE CAPACITANCE DIODE
Terminal Position
    • AXIAL
    • BOTTOM
    • DUAL
    • END
    • SINGLE
    • UNSPECIFIED
    • UPPER
Terminal Form (1)
    • NO LEAD
    • C BEND
    • FLAT
    • GULL WING
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Minimum Quality Factor
    • 10
    • 100
    • 1000
    • 133
    • 1400
    • 15
    • 150
    • 1500
    • 175
    • 190
    • 20
    • 200
    • 2000
    • 225
    • 2400
    • 25
    • 250
    • 280
    • 30
    • 300
    • 3000
    • 3200
    • 325
    • 33
    • 35
    • 350
    • 3500
    • 375
    • 400
    • 4000
    • 45
    • 450
    • 5
    • 50
    • 500
    • 550
    • 60
    • 600
    • 66
    • 70
    • 700
    • 75
    • 750
    • 80
    • 800
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, COMMON CATHODE, 2 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Variable Capacitance Diode Classification
    • ABRUPT
    • HYPERABRUPT
Frequency Band
    • HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • KA BAND
    • L BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO KA BAND
    • ULTRA HIGH FREQUENCY TO L BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO KU BAND
    • VERY HIGH FREQUENCY TO L BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • X BAND
Maximum Output Current
    • .1 A
Maximum Forward Voltage (VF)
    • .715 V
Maximum Reverse Recovery Time
    • .004 us
Maximum Reverse Current
    • .000000003 uA
    • .000000005 uA
    • .00000001 uA
    • .00000002 uA
    • .00000005 uA
    • .0000001 uA
    • .003 uA
    • .005 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .5 uA
    • 2 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
Reverse Test Voltage
    • 10 V
    • 100 V
    • 12 V
    • 15 V
    • 16 V
    • 17.6 V
    • 19 V
    • 20 V
    • 25 V
    • 26 V
    • 28 V
    • 30 V
    • 32 V
    • 4 V
    • 40 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 8 V
    • 9 V
    • 90 V
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 10 V
    • 100 V
    • 12 V
    • 120 V
    • 13 V
    • 14 V
    • 140 V
    • 15 V
    • 16 V
    • 18 V
    • 20 V
    • 22 V
    • 25 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 34 V
    • 35 V
    • 36 V
    • 40 V
    • 48 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7 V
    • 8 V
    • 85 V
    • 9 V
    • 90 V
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 85 Cel
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • MATTE TIN
    • Matte Tin (Sn)
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
JESD-30 Code
    • O-CEMW-N2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-R2
    • O-PBCY-T2
    • O-PBCY-T3
    • O-PBCY-W2
    • O-PBCY-W3
    • O-XALF-W2
    • O-XAMW-G2
    • O-XBCY-T3
    • O-XEMW-N2
    • R-CBCC-N2
    • R-CBCC-N3
    • R-PBCC-N2
    • R-PBCC-N3
    • R-PDIP-T2
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PDSO-N2
    • R-PDSO-X
    • R-PSIP-T2
    • R-PSIP-T3
    • R-PSIP-W2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDSO-F2
    • R-XDSO-N2
    • S-XUUC-N1
    • X-XXMW-F2
Moisture Sensitivity Level (MSL)
    • 1
    • NOT APPLICABLE
Case Connection
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .1 W
    • .15 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .33 W
    • .4 W
    • .5 W
    • .75 W
    • .8 W
Nominal Diode Capacitance
    • .1 pF
    • .225 pF
    • .3 pF
    • .4 pF
    • .45 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .86 pF
    • .9 pF
    • 1 pF
    • 1.01 pF
    • 1.055 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.305 pF
    • 1.36 pF
    • 1.37 pF
    • 1.5 pF
    • 1.575 pF
    • 1.58 pF
    • 1.8 pF
    • 1.85 pF
    • 1.86 pF
    • 1.89 pF
    • 1.9 pF
    • 1.95 pF
    • 10 pF
    • 10.1 pF
    • 10.25 pF
    • 10.4 pF
    • 10.45 pF
    • 10.5 pF
    • 10.515 pF
    • 10.55 pF
    • 100 pF
    • 102 pF
    • 11 pF
    • 11.5 pF
    • 11.6 pF
    • 12 pF
    • 12.5 pF
    • 12.7 pF
    • 120 pF
    • 13 pF
    • 13.25 pF
    • 13.8 pF
    • 14 pF
    • 14.16 pF
    • 14.2 pF
    • 14.5 pF
    • 14.8 pF
    • 14.95 pF
    • 15 pF
    • 15.2 pF
    • 15.21 pF
    • 15.29 pF
    • 15.3 pF
    • 15.75 pF
    • 15.8 pF
    • 15.81 pF
    • 16 pF
    • 16.25 pF
    • 16.5 pF
    • 17 pF
    • 17.5 pF
    • 17.75 pF
    • 175 pF
    • 18 pF
    • 18.22 pF
    • 18.3 pF
    • 18.5 pF
    • 18.6 pF
    • 18.7 pF
    • 18.75 pF
    • 19 pF
    • 19.1 pF
    • 19.11 pF
    • 19.23 pF
    • 19.25 pF
    • 19.3 pF
    • 19.7 pF
    • 19.74 pF
    • 19.75 pF
    • 19.9 pF
    • 19.92 pF
    • 2 pF
    • 2.05 pF
    • 2.1 pF
    • 2.11 pF
    • 2.145 pF
    • 2.15 pF
    • 2.2 pF
    • 2.3 pF
    • 2.5 pF
    • 2.525 pF
    • 2.6 pF
    • 2.7 pF
    • 2.75 pF
    • 2.85 pF
    • 2.88 pF
    • 20 pF
    • 20.2 pF
    • 20.25 pF
    • 21.26 pF
    • 22 pF
    • 22.5 pF
    • 22.75 pF
    • 23 pF
    • 23.6 pF
    • 24 pF
    • 24.15 pF
    • 25 pF
    • 250 pF
    • 26 pF
    • 26.75 pF
    • 27 pF
    • 27.3 pF
    • 27.75 pF
    • 27.8 pF
    • 28 pF
    • 28.19 pF
    • 28.5 pF
    • 29 pF
    • 29.3 pF
    • 29.5 pF
    • 29.75 pF
    • 3 pF
    • 3.05 pF
    • 3.1 pF
    • 3.15 pF
    • 3.3 pF
    • 3.31 pF
    • 3.3135 pF
    • 3.34 pF
    • 3.4 pF
    • 3.43 pF
    • 3.5 pF
    • 3.59 pF
    • 3.665 pF
    • 3.73 pF
    • 3.8 pF
    • 3.85 pF
    • 3.93 pF
    • 30 pF
    • 30.1 pF
    • 30.3 pF
    • 30.5 pF
    • 30.85 pF
    • 31 pF
    • 31.25 pF
    • 31.5 pF
    • 31.75 pF
    • 32 pF
    • 33 pF
    • 33.5 pF
    • 34.85 pF
    • 35 pF
    • 35.22 pF
    • 35.5 pF
    • 36 pF
    • 36.09 pF
    • 36.99 pF
    • 360 pF
    • 37 pF
    • 37.25 pF
    • 37.91 pF
    • 38 pF
    • 38.3 pF
    • 38.5 pF
    • 38.65 pF
    • 38.84 pF
    • 388.1 pF
    • 39 pF
    • 39.3 pF
    • 39.5 pF
    • 4 pF
    • 4.2 pF
    • 4.25 pF
    • 4.35 pF
    • 4.4 pF
    • 4.45 pF
    • 4.5 pF
    • 4.6 pF
    • 4.65 pF
    • 4.7 pF
    • 4.75 pF
    • 4.86 pF
    • 4.9 pF
    • 4.95 pF
    • 40 pF
    • 40.65 pF
    • 41 pF
    • 41.8 pF
    • 42 pF
    • 42.75 pF
    • 427.5 pF
    • 43 pF
    • 43.25 pF
    • 43.45 pF
    • 43.75 pF
    • 430 pF
    • 435 pF
    • 439 pF
    • 44.25 pF
    • 44.75 pF
    • 440 pF
    • 45 pF
    • 45.25 pF
    • 45.55 pF
    • 45.75 pF
    • 450 pF
    • 459 pF
    • 46 pF
    • 46.1 pF
    • 46.75 pF
    • 460 pF
    • 461 pF
    • 462.8 pF
    • 47 pF
    • 47.365 pF
    • 47.5 pF
    • 470 pF
    • 473.05 pF
    • 48 pF
    • 485 pF
    • 49.5 pF
    • 497.5 pF
    • 5 pF
    • 5.3 pF
    • 5.4 pF
    • 5.6 pF
    • 50 pF
    • 500 pF
    • 503 pF
    • 51 pF
    • 52 pF
    • 52.5 pF
    • 524.6 pF
    • 53 pF
    • 55 pF
    • 550 pF
    • 56 pF
    • 56.5 pF
    • 57 pF
    • 58 pF
    • 6 pF
    • 6.19 pF
    • 6.2 pF
    • 6.5 pF
    • 6.6 pF
    • 6.7 pF
    • 6.8 pF
    • 6.82 pF
    • 6.9 pF
    • 60 pF
    • 62.39 pF
    • 64 pF
    • 67.5 pF
    • 68 pF
    • 68.7 pF
    • 69 pF
    • 7 pF
    • 7.05 pF
    • 7.15 pF
    • 7.37 pF
    • 7.4 pF
    • 7.45 pF
    • 7.5 pF
    • 7.65 pF
    • 7.8 pF
    • 7.85 pF
    • 70 pF
    • 76.75 pF
    • 8.2 pF
    • 8.31 pF
    • 8.6 pF
    • 8.7 pF
    • 8.8 pF
    • 81 pF
    • 82 pF
    • 9 pF
    • 9.1 pF
    • 9.3 pF
    • 9.5 pF
    • 95 pF
    • 97.095 pF
Additional Features
    • 0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 0.7% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 1% MATCHING GUARANTEED
    • 1.5% MATCHED SETS AVAILABLE
    • 1.6% MATCHED SETS AVAILABLE
    • 2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 2% MATCHED SETS AVAILABLE
    • 2% MATCHED SETS OF 10 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 5 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 8 DIODES ARE AVAILABLE
    • 2.5% MATCHED GROUP AVAILABLE
    • 2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 2.5% MATCHED SETS ARE AVAILABLE
    • 3% MATCHED GROUP AVAILABLE
    • 3% MATCHED SETS ARE AVAILABLE
    • 3% MATCHED SETS ARE AVAILABLE ,3% MATCHED SET OF THREE DIODES
    • 3% MATCHED SETS ARE AVAILABLE, 3% MATCHED SET OF TWO DIODES
    • 3% MATCHED SETS AVAILABLE
    • 6% MATCHED GROUP AVAILABLE
    • 6% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 6% MATCHED SETS ARE AVAILABLE, SMALL TRACKING ERROR
    • AVAILABLE IN MATCHED SETS
    • CAPACITANCE MATCHED TO 1.5%
    • CAPACITANCE MATCHED TO 2%
    • CAPACITANCE MATCHED TO 2.5%
    • CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES
    • CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES
    • CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES
    • CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES
    • CAPACITANCE MATCHED TO 3%
    • CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES
    • CAPACITANCE MATCHED TO 5 %, LOW INDUCTANCE
    • CAPACITANCE MATCHED TO 6%, SMALL TRACKING ERROR
    • EUROPEAN PART NUMBER
    • EXCELLENT MATCHING TO 1.6% DMA
    • EXCELLENT MATCHING TO 2% DMA
    • EXCELLENT MATCHING TO 2% DMA, HIGH LINEARITY, LOW SERIES RESISTANCE
    • HIGH Q
    • HIGH Q, 1% MATCHING GUARANTEED
    • HIGH Q, HIGH RELIABILITY
    • HIGH Q, LOW INDUCTANCE
    • HIGH RELIABILITY
    • HIGH RELIABILITY, EUROPEAN PART NUMBER
    • HIGH RELIABILITY, LOW LEAKAGE CURRENT
    • LOW INDUCTANCE
    • LOW NOISE
    • MATCHED PAIR AVAILABLE
    • MATCHED TO 2.5%
    • MATCHED TO 3%
    • SMALL TRACKING ERROR
    • SMALL TRACKING ERROR, 2% MATCHED SETS ARE AVAILABLE
    • SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
    • SMALL TRACKING ERROR, CAPACITANCE MATCHED TO 2%
    • SMALL TRACKING ERROR, CAPACITANCE MATCHED TO 2.5%
    • SUPER Q
JEDEC-95 Code
    • DO-204AA
    • DO-204AB
    • DO-34
    • DO-35
    • DO-7
    • TO-226AC
    • TO-236AB
    • TO-261AA
    • TO-92
Diode Cap Tolerance
    • .5 %
    • 1 %
    • 1.64 %
    • 1.68 %
    • 1.71 %
    • 1.75 %
    • 10 %
    • 10.06 %
    • 10.11 %
    • 10.14 %
    • 10.2 %
    • 10.26 %
    • 10.29 %
    • 10.34 %
    • 10.45 %
    • 10.53 %
    • 10.56 %
    • 10.59 %
    • 10.64 %
    • 10.67 %
    • 10.77 %
    • 10.81 %
    • 10.9 %
    • 11.1 %
    • 11.11 %
    • 11.36 %
    • 12.07 %
    • 12.09 %
    • 12.13 %
    • 12.2 %
    • 12.24 %
    • 12.82 %
    • 12.92 %
    • 13.04 %
    • 14.28 %
    • 14.62 %
    • 15 %
    • 15.09 %
    • 15.15 %
    • 15.78 %
    • 16.63 %
    • 16.639 %
    • 16.64 %
    • 16.66 %
    • 18.75 %
    • 2 %
    • 2.53 %
    • 2.66 %
    • 2.67 %
    • 2.69 %
    • 2.7 %
    • 2.76 %
    • 2.85 %
    • 2.86 %
    • 2.872 %
    • 2.93 %
    • 20 %
    • 20.75 %
    • 21.73 %
    • 22.22 %
    • 23.81 %
    • 25.93 %
    • 3 %
    • 3.01 %
    • 3.03 %
    • 3.04 %
    • 3.062 %
    • 3.13 %
    • 3.19 %
    • 3.22 %
    • 3.26 %
    • 3.3 %
    • 3.31 %
    • 3.35 %
    • 3.36 %
    • 3.47 %
    • 3.5 %
    • 3.52 %
    • 3.53 %
    • 3.7 %
    • 3.75 %
    • 3.89 %
    • 3.9 %
    • 3.91 %
    • 3.93 %
    • 3.94 %
    • 3.95 %
    • 30.23 %
    • 33.33 %
    • 36 %
    • 4 %
    • 4.08 %
    • 4.09 %
    • 4.32 %
    • 4.41 %
    • 4.42 %
    • 4.43 %
    • 4.47 %
    • 4.57 %
    • 4.62 %
    • 4.65 %
    • 4.66 %
    • 4.68 %
    • 4.69 %
    • 4.76 %
    • 4.79 %
    • 4.84 %
    • 4.89 %
    • 4.92 %
    • 5 %
    • 5.02 %
    • 5.08 %
    • 5.1 %
    • 5.18 %
    • 5.23 %
    • 5.26 %
    • 5.35 %
    • 5.351 %
    • 5.36 %
    • 5.45 %
    • 5.46 %
    • 5.49 %
    • 5.51 %
    • 5.53 %
    • 5.54 %
    • 5.56 %
    • 5.59 %
    • 5.6 %
    • 5.66 %
    • 5.75 %
    • 5.85 %
    • 5.88 %
    • 5.95 %
    • 5.98 %
    • 6 %
    • 6.15 %
    • 6.17 %
    • 6.21 %
    • 6.25 %
    • 6.33 %
    • 6.35 %
    • 6.36 %
    • 6.45 %
    • 6.451 %
    • 6.48 %
    • 6.52 %
    • 6.54 %
    • 6.55 %
    • 6.56 %
    • 6.59 %
    • 6.67 %
    • 6.73 %
    • 6.81 %
    • 6.87 %
    • 6.89 %
    • 6.9 %
    • 6.93 %
    • 6.94 %
    • 7 %
    • 7.01 %
    • 7.04 %
    • 7.08 %
    • 7.09 %
    • 7.14 %
    • 7.25 %
    • 7.33 %
    • 7.43 %
    • 7.46 %
    • 7.5 %
    • 7.59 %
    • 7.6 %
    • 7.604 %
    • 7.64 %
    • 7.69 %
    • 7.7 %
    • 7.71 %
    • 7.72 %
    • 7.75 %
    • 7.76 %
    • 7.848 %
    • 7.85 %
    • 7.937 %
    • 7.94 %
    • 8 %
    • 8.05 %
    • 8.06 %
    • 8.09 %
    • 8.11 %
    • 8.33 %
    • 8.42 %
    • 8.43 %
    • 8.59 %
    • 8.62 %
    • 8.67 %
    • 8.72 %
    • 8.76 %
    • 8.77 %
    • 8.82 %
    • 9.07 %
    • 9.09 %
    • 9.15 %
    • 9.16 %
    • 9.21 %
    • 9.29 %
    • 9.3 %
    • 9.33 %
    • 9.39 %
    • 9.43 %
    • 9.52 %
    • 9.523 %
    • 9.68 %
    • 9.8 %
    • 9.85 %
Minimum Breakdown Voltage
    • 10 V
    • 110 V
    • 12 V
    • 13 V
    • 14 V
    • 15 V
    • 16 V
    • 17 V
    • 18 V
    • 20 V
    • 22 V
    • 25 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 34 V
    • 35 V
    • 44 V
    • 45 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 61 V
    • 65 V
    • 66 V
    • 7 V
    • 72 V
    • 85 V
    • 90 V
    • 99 V
Maximum Non Repetitive Peak Forward Current
    • 4.5 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 240
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Minimum Diode Capacitance Ratio
    • 1.1
    • 1.15
    • 1.2
    • 1.25
    • 1.3
    • 1.45
    • 1.5
    • 1.55
    • 1.6
    • 1.65
    • 1.68
    • 1.6929
    • 1.7
    • 1.72
    • 1.73
    • 1.74
    • 1.75
    • 1.8
    • 1.81
    • 1.88
    • 1.9
    • 10
    • 10.2
    • 10.3
    • 10.6
    • 10.7
    • 10.8
    • 11
    • 11.5
    • 12
    • 12.5
    • 13
    • 13.4
    • 13.5
    • 13.7
    • 14
    • 14.5
    • 14.8
    • 14.85
    • 15
    • 15.5
    • 16
    • 16.2
    • 17
    • 17.5
    • 17.7
    • 18.5
    • 19.5
    • 2
    • 2.02
    • 2.05
    • 2.08
    • 2.09
    • 2.1
    • 2.13
    • 2.15
    • 2.1924
    • 2.2
    • 2.24
    • 2.26
    • 2.28
    • 2.3
    • 2.32
    • 2.33
    • 2.34
    • 2.35
    • 2.36
    • 2.37
    • 2.38
    • 2.39
    • 2.4
    • 2.42
    • 2.43
    • 2.5
    • 2.55
    • 2.6
    • 2.62
    • 2.7
    • 2.73
    • 2.77
    • 2.79
    • 2.8
    • 2.81
    • 2.82
    • 2.83
    • 2.9
    • 2.941
    • 20
    • 20.6
    • 21
    • 22.5
    • 23
    • 23.3
    • 24
    • 3
    • 3.091
    • 3.1
    • 3.2
    • 3.25
    • 3.3
    • 3.4
    • 3.5
    • 3.55
    • 3.625
    • 3.7
    • 3.75
    • 3.8
    • 35
    • 4
    • 4.1
    • 4.2
    • 4.3
    • 4.45
    • 4.5
    • 4.6
    • 4.9
    • 5
    • 5.6
    • 5.9
    • 6
    • 6.2
    • 6.3
    • 7
    • 7.1
    • 7.12
    • 7.3
    • 7.6
    • 7.8
    • 8
    • 8.2
    • 8.45
    • 8.8
    • 8.9
    • 9
    • 9.5
    • 9.7
    • 9.8
Reference Standard
    • AEC-Q101
    • IEC-60134
    • MIL-19500/436A
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

SMV1236-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

CHIP CARRIER

Varactors

15 V

175 Cel

-55 Cel

R-PBCC-N2

1

Not Qualified

.25 W

17 pF

LOW NOISE

8.82 %

15 V

260

SILICON

1.6

MA46H120

TE Connectivity

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

3000

UNSPECIFIED

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

15 V

R-XDSO-N2

Not Qualified

.1 W

1.1 pF

20 V

GALLIUM ARSENIDE

SMV1213-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

S BAND

1

CHIP CARRIER

Varactors

12 V

175 Cel

-55 Cel

R-XBCC-N2

1

Not Qualified

19 pF

16 V

260

SILICON

2

SMV1430-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

CHIP CARRIER

R-PBCC-N2

1

Not Qualified

260

SILICON

SMV2025-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

19 V

CHIP CARRIER

20 V

175 Cel

-55 Cel

R-PBCC-N2

.25 W

4.65 pF

9.68 %

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.2

MA46H120-W

M/a-com Technology Solutions

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

3000

UNSPECIFIED

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-XDSO-N2

Not Qualified

.1 W

1.1 pF

20 V

GALLIUM ARSENIDE

SMV1231-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

CHIP CARRIER

Varactors

15 V

175 Cel

-55 Cel

R-PBCC-N2

1

.75 W

1.58 pF

LOW NOISE

9.21 %

15 V

260

SILICON

1.45

SMV1253-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

350

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

CHIP CARRIER

15 V

125 Cel

-55 Cel

R-PBCC-N2

1

.25 W

53 pF

15 V

260

SILICON

11

MGV125-08

M/a-com Technology Solutions

VARIABLE CAPACITANCE DIODE

UPPER

NO LEAD

1

YES

SQUARE

4000

UNSPECIFIED

SINGLE

HYPERABRUPT

KA BAND

1

UNCASED CHIP

S-XUUC-N1

Not Qualified

.25 W

.3 pF

16.66 %

22 V

NOT SPECIFIED

NOT SPECIFIED

GALLIUM ARSENIDE

SMV1232-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

CHIP CARRIER

Varactors

15 V

175 Cel

-55 Cel

R-PBCC-N2

1

Not Qualified

.75 W

2.6 pF

LOW NOISE

10 %

15 V

260

SILICON

1.5

SMV2202-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

.05 uA

1

17.6 V

CHIP CARRIER

22 V

175 Cel

-55 Cel

R-PBCC-N2

.75 W

1.36 pF

12.92 %

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

SMV2201-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

.05 uA

1

17.6 V

CHIP CARRIER

22 V

175 Cel

-55 Cel

R-PBCC-N2

.75 W

.86 pF

14.62 %

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

SMV1265-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

26 V

CHIP CARRIER

125 Cel

-55 Cel

R-PBCC-N2

.25 W

13.8 pF

8.09 %

28 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

17.7

SMV2205-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

.05 uA

1

17.6 V

CHIP CARRIER

22 V

175 Cel

-55 Cel

R-PBCC-N2

.75 W

4.86 pF

10.81 %

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

SMV1234-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

S BAND

1

CHIP CARRIER

Varactors

15 V

175 Cel

-55 Cel

R-XBCC-N2

1

.75 W

6.5 pF

12.07 %

15 V

260

SILICON

1.6

SMV1255-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

350

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

CHIP CARRIER

15 V

125 Cel

-55 Cel

R-PBCC-N2

1

.25 W

64 pF

15 V

260

SILICON

11

SMV1405-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

S BAND

1

CHIP CARRIER

175 Cel

-55 Cel

R-PBCC-N2

1

.75 W

1.305 pF

11.11 %

30 V

260

SILICON

3.8

SMV2203-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

.05 uA

1

17.6 V

CHIP CARRIER

22 V

175 Cel

-55 Cel

R-PBCC-N2

.75 W

1.86 pF

12.13 %

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ESVD301

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

X BAND

1

CHIP CARRIER

Varactors

30 V

150 Cel

R-XBCC-N2

Not Qualified

.2 W

2.6 pF

SILICON

17

BBY34D

STMicroelectronics

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

400

UNSPECIFIED

SINGLE

HYPERABRUPT

1

MICROWAVE

175 Cel

O-XEMW-N2

Not Qualified

22 V

SILICON

2.7

BB181LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CHIP CARRIER

125 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

12.5 pF

36 %

32 V

e3

SILICON

12

BB187LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

CHIP CARRIER

125 Cel

-55 Cel

R-PBCC-N2

31.75 pF

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

7.71 %

32 V

SILICON

11

BB182LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

125 Cel

-55 Cel

TIN

R-PDSO-N2

Not Qualified

57 pF

8.77 %

e3

SILICON

20.6

BB202LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

CHIP CARRIER

85 Cel

-55 Cel

R-PBCC-N2

Not Qualified

30.85 pF

8.59 %

SILICON

2.5

BB187LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CHIP CARRIER

125 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

31.75 pF

2% MATCHED SETS OF 5 DIODES ARE AVAILABLE

7.71 %

32 V

e3

SILICON

11

BB202LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

CHIP CARRIER

Varactors

6 V

85 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

30.85 pF

8.59 %

e3

SILICON

2.5

BB179BLX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

125 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

2.1 pF

CAPACITANCE MATCHED TO 2%

8.43 %

32 V

e3

SILICON

8.45

BB173LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

32 V

125 Cel

-55 Cel

R-PDSO-N2

38.5 pF

10 %

32 V

SILICON

13.5

IEC-60134

BB179LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-N2

Not Qualified

19.75 pF

7.848 %

e3

SILICON

8.45

BB179LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-N2

Not Qualified

19.75 pF

7.848 %

e3

SILICON

8.45

BB174LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

R-PDSO-N2

19.75 pF

7.85 %

SILICON

8.45

IEC-60134

BB178LX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CHIP CARRIER

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

38.5 pF

10 %

e3

SILICON

13.5

BB178LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CHIP CARRIER

Varactors

32 V

125 Cel

-55 Cel

TIN

R-PBCC-N2

Not Qualified

38.5 pF

10 %

e3

SILICON

13.5

BBY34C

Infineon Technologies

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

400

CERAMIC, METAL-SEALED COFIRED

SINGLE

HYPERABRUPT

1

MICROWAVE

O-CEMW-N2

Not Qualified

3.4 pF

22 V

SILICON

4.3

BBY33BB2

Infineon Technologies

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

4000

UNSPECIFIED

SINGLE

ABRUPT

1

MICROWAVE

Varactors

25 V

O-XEMW-N2

Not Qualified

1.2 pF

25 V

SILICON

2.5

BBY33DA2

Infineon Technologies

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

3500

UNSPECIFIED

SINGLE

ABRUPT

1

MICROWAVE

Varactors

30 V

O-XEMW-N2

Not Qualified

2 pF

30 V

SILICON

3

BBY53-03L

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CHIP CARRIER

MATTE TIN

R-PBCC-N3

Not Qualified

5.3 pF

9.43 %

6 V

e3

SILICON

1.8

BBY51-02LE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

Varactors

7 V

MATTE TIN

R-XBCC-N2

Not Qualified

5.4 pF

6.48 %

7 V

e3

260

SILICON

1.55

BBY53-02L

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

Varactors

6 V

125 Cel

-55 Cel

R-XBCC-N2

Not Qualified

5.3 pF

9.43 %

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.8

BBY52-02L

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

Varactors

7 V

R-XBCC-N2

Not Qualified

1.85 pF

22.22 %

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.1

BBY5202LE6816XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

150 Cel

-55 Cel

R-XBCC-N2

1.85 pF

22.22 %

7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.1

BBY53-03LRH

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

Varactors

6 V

MATTE TIN

R-XBCC-N3

CATHODE

Not Qualified

5.3 pF

9.43 %

6 V

e3

SILICON

1.8

BBY58-07L4

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

4

YES

RECTANGULAR

UNSPECIFIED

SEPARATE, 2 ELEMENTS

HYPERABRUPT

.1 uA

2

8 V

CHIP CARRIER

Other Diodes

10 V

150 Cel

-55 Cel

TIN LEAD

R-XBCC-N4

Not Qualified

18.3 pF

4.89 %

10 V

e0

SILICON

1.15

BBY5202LE6327XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

150 Cel

-55 Cel

R-XBCC-N2

1.85 pF

22.22 %

7 V

SILICON

1.1

BBY57-02L

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CHIP CARRIER

Varactors

10 V

MATTE TIN

R-PBCC-N2

Not Qualified

17.5 pF

5.98 %

10 V

e3

SILICON

3

BBY5302LE6327XTMA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

125 Cel

-55 Cel

R-XBCC-N2

5.3 pF

9.43 %

6 V

SILICON

1.8

BBY58-02L

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

Varactors

10 V

MATTE TIN

R-XBCC-N2

Not Qualified

18.3 pF

4.89 %

10 V

e3

SILICON

1.15

BBY51-02L

Infineon Technologies

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

1

CHIP CARRIER

Varactors

7 V

MATTE TIN

R-XBCC-N2

Not Qualified

5.4 pF

6.48 %

7 V

e3

SILICON

1.55

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.