NO LEAD Varactor Diodes 80

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

JDV2S38SC

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

150 Cel

R-XBCC-N2

7.37 pF

5.02 %

10 V

SILICON

2.38

JDV2S27SC

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-XBCC-N2

Not Qualified

3.03 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.81

JDV3S28CT

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

150 Cel

R-XBCC-N3

CATHODE

Not Qualified

10.515 pF

3 %

10 V

SILICON

2.09

JDV3S25CT

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-XBCC-N3

Not Qualified

3.19 %

SILICON

2.77

JDV2S26SC

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-CBCC-N2

Not Qualified

15.81 pF

3.04 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.83

JDV3S26CT

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-CBCC-N3

CATHODE

Not Qualified

15.8 pF

3.03 %

SILICON

2.82

JDV2S29SC

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-XBCC-N2

Not Qualified

3.93 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.73

JDV2S25SC

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-XBCC-N2

Not Qualified

3.13 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.81

JDV3S27CT

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-XBCC-N3

CATHODE

Not Qualified

3.01 %

SILICON

2.79

JDV3S29CT

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-CBCC-N3

CATHODE

Not Qualified

3.73 pF

3.75 %

SILICON

2.73

S3028

Toshiba

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

UNSPECIFIED

SINGLE

ABRUPT

MILLIMETER WAVE BAND

1

MICROWAVE

Varactors

50 V

150 Cel

-65 Cel

O-XEMW-N2

Not Qualified

1.95 pF

12.82 %

50 V

SILICON

JDV2S31SC

Toshiba

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ULTRA HIGH FREQUENCY

1

CHIP CARRIER

Varactors

10 V

150 Cel

R-XBCC-N2

Not Qualified

4.08 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.15

JDV2S28SC

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

10 V

150 Cel

TIN LEAD

R-PDSO-N2

Not Qualified

10.45 pF

3.062 %

10 V

e0

SILICON

2.1

RKV653KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

CHIP CARRIER

Varactors

10 V

125 Cel

R-PBCC-N2

Not Qualified

2.75 pF

5.45 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.4

RKV600KN

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN LEAD

R-PDSO-N2

Not Qualified

6.82 pF

2.93 %

e0

SILICON

2.35

RKV652KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

10 V

125 Cel

TIN LEAD

R-PDSO-N2

Not Qualified

3.1 pF

6.45 %

10 V

e0

SILICON

2.28

RKV607KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

R-PDSO-N2

Not Qualified

2.1 pF

9.523 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.75

RKV605KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

CHIP CARRIER

Varactors

10 V

125 Cel

R-PBCC-N2

Not Qualified

19.25 pF

3.9 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.02

RKV608KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-N2

1

Not Qualified

4.4 pF

3.9 %

15 V

SILICON

2.13

RKV603KP#R0

Renesas Electronics

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

.01 uA

1

10 V

CHIP CARRIER

15 V

125 Cel

R-XBCC-N2

7.65 pF

3.53 %

15 V

SILICON

2.1

RKV600KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-N2

Not Qualified

6.82 pF

2.93 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.35

RKV650KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-N2

1

Not Qualified

7.5 pF

4 %

15 V

SILICON

3.25

RKV650KN

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-N2

1

Not Qualified

7.5 pF

4 %

15 V

SILICON

3.25

RKV650KP#R0

Renesas Electronics

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

.01 uA

1

10 V

CHIP CARRIER

15 V

125 Cel

R-XBCC-N2

7.5 pF

4 %

15 V

SILICON

3.25

RKV602KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

125 Cel

R-PDSO-N2

Not Qualified

2.145 pF

4.42 %

SILICON

1.6

RKV604KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-N2

Not Qualified

2.525 pF

6.93 %

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.73

RKV601KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-N2

Not Qualified

7.5 pF

2.66 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.43

RKV603KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-N2

Not Qualified

7.65 pF

3.52 %

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.1

RKV606KP

Renesas Electronics

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

15 V

125 Cel

R-PDSO-N2

1

Not Qualified

3.34 pF

4.79 %

SILICON

1.81

AT9020

Broadcom

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

500

CERAMIC, METAL-SEALED COFIRED

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

MICROWAVE

Varactors

90 V

O-CEMW-N2

Not Qualified

39 pF

10 %

90 V

SILICON

9.5

AT9010

Broadcom

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

750

CERAMIC, METAL-SEALED COFIRED

SINGLE

ABRUPT

L BAND

1

MICROWAVE

Varactors

90 V

O-CEMW-N2

Not Qualified

5.6 pF

10 %

90 V

SILICON

8.8

AT9000

Broadcom

VARIABLE CAPACITANCE DIODE

END

NO LEAD

2

YES

ROUND

1000

CERAMIC, METAL-SEALED COFIRED

SINGLE

ABRUPT

S BAND

1

MICROWAVE

Varactors

90 V

O-CEMW-N2

Not Qualified

.8 pF

10 %

90 V

SILICON

5.6

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.