THROUGH-HOLE Varactor Diodes 134

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

MC209RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

TIN LEAD

O-PBCY-T3

Not Qualified

.2 W

29 pF

TO-92

10.34 %

30 V

e0

SILICON

5

SVC321SPA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

Not Qualified

388.1 pF

16 V

SILICON

15.5

MV104RLRE

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

SILICON

2.5

MV209RL

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

MV104RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

EUROPEAN PART NUMBER

TO-92

6.33 %

32 V

e0

SILICON

2.5

LV2209RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

MV2109RLRE

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

SVC321SPAB

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

3 %

16 V

SILICON

15.5

MV209RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

CYLINDRICAL

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

235

SILICON

5

LV2209RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

25 V

e0

SILICON

2.5

SVC321SPAC

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

IN-LINE

Varactors

16 V

100 Cel

R-PSIP-T2

3 %

16 V

SILICON

15.5

MV2101RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

MV104RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

SILICON

2.5

LV2205ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

25 V

e0

SILICON

2.5

MV209RLRE

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

SILICON

5

MV104RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

CYLINDRICAL

Varactors

32 V

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

235

SILICON

2.5

MV2111

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

150

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

Varactors

30 V

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

47 pF

TO-92

10 %

30 V

e0

SILICON

2.5

MV2104

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

Varactors

30 V

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

12 pF

TO-92

10 %

30 V

e0

SILICON

2.5

MV2109G

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

MV104ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

EUROPEAN PART NUMBER

TO-92

6.33 %

32 V

e0

SILICON

2.5

MV209RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

SILICON

5

MV2101RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

MV2105RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

LV2209

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

25 V

e0

235

SILICON

2.5

MV2105

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e0

235

SILICON

2.5

MV104

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

CYLINDRICAL

Varactors

32 V

TIN LEAD

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e0

235

SILICON

2.5

LV2205RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

MV2101G

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

SVC321B

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

CYLINDRICAL

16 V

100 Cel

O-PBCY-T2

3 %

16 V

SILICON

15.5

MV2101ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

MV2109RLRPG

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

LV2205RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

MV2105RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

SVC203SPA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

60

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

IN-LINE

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

R-PSIP-T3

Not Qualified

.1 W

7.64 %

16 V

SILICON

2.1924

MV209RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

SILICON

5

MV209ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

MV209RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

MV2109RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

LV2205RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

SVC321D

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

CYLINDRICAL

16 V

100 Cel

O-PBCY-T2

3 %

16 V

SILICON

15.5

MV2109RL

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

MV2109RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

235

SILICON

2.5

MV104RLRAG

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

CYLINDRICAL

Varactors

32 V

TIN SILVER COPPER

O-PBCY-T3

Not Qualified

.28 W

39.5 pF

1% MATCHING GUARANTEED

TO-92

6.33 %

32 V

e1

260

SILICON

2.5

MV2101RLRE

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

BB204G-AMMOPAK

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

O-PBCY-T3

Not Qualified

SILICON

2.5

BB130

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

.05 uA

1

30 V

CYLINDRICAL

85 Cel

O-PBCY-T2

Not Qualified

450 pF

3% MATCHED SETS ARE AVAILABLE, 3% MATCHED SET OF TWO DIODES

TO-92

32 V

SILICON

23

BB204B

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

.05 uA

2

30 V

CYLINDRICAL

100 Cel

O-PBCY-T3

Not Qualified

14 pF

TO-92

SILICON

2.5

BB212-AMMOPAK

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

3

NO

ROUND

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

O-PBCY-T3

Not Qualified

SILICON

22.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.