THROUGH-HOLE Varactor Diodes 134

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Terminal Finish	JESD-30 Code	Qualification	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.05 uA	2	10 V	CYLINDRICAL			85 Cel		O-PBCY-T3	Not Qualified	500 pF		TO-92	3.5 %	12 V				SILICON	22.5
BB204G	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL			100 Cel		O-PBCY-T3	Not Qualified	14 pF		TO-92						SILICON	2.5
BB112	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND		PLASTIC/EPOXY	SINGLE			.05 uA	1	12 V	CYLINDRICAL			85 Cel		O-PBCY-T2	Not Qualified	440 pF	3% MATCHED SETS ARE AVAILABLE ,3% MATCHED SET OF THREE DIODES	TO-92						SILICON
BB204B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-PBCY-T3	Not Qualified									SILICON	2.5
BB204G-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-PBCY-T3	Not Qualified									SILICON	2.5
BB204B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-PBCY-T3	Not Qualified									SILICON	2.5
BB212-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-PBCY-T3	Not Qualified									SILICON	22.5
BB204B-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	2.55
BB304-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	1.65
BB204B-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	2.55
BB304A	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	20 V			O-PBCY-T3	Not Qualified	42 pF		TO-92		18 V				SILICON	1.65
BB304-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	1.65
BB204G-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	2.55
BB304-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	1.65
BB204G-TO-92C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	2.55
BB204G-TO-92D	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	2.55
BB204B-TO-92B	Infineon Technologies	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND		UNSPECIFIED	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL					O-XBCY-T3	Not Qualified					32 V				SILICON	2.55
ISV224	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	15 pF				30 V				SILICON
ISV186	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	3.85 pF				30 V				SILICON
1SV147	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.05 uA	2	15 V	IN-LINE			125 Cel	TIN LEAD	R-PSIP-T3	Not Qualified		3% MATCHED GROUP AVAILABLE		.5 %	15 V	e0			SILICON	2.1
ISV226	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	41 pF				30 V				SILICON
ISV227	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	28 pF				30 V				SILICON
ISV147	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified	28.5 pF				15 V		NOT SPECIFIED	240	SILICON
ISV149	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified	435 pF				15 V		NOT SPECIFIED	240	SILICON
ISV211	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	33 pF				30 V				SILICON
1SV102	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE				1		IN-LINE					R-PSIP-T2	Not Qualified		3% MATCHED GROUP AVAILABLE		.5 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	20
ISV212	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	14 pF				15 V				SILICON
1SV101	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.00000001 uA	1	15 V	IN-LINE	Varactors	15 V	125 Cel	Tin/Lead (Sn/Pb)	R-PSIP-T2	Not Qualified	30 pF	CAPACITANCE MATCHED TO 3%			15 V	e0			SILICON	2
ISV161	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	26 pF				30 V				SILICON
ISV153	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	14.16 pF				30 V				SILICON
1SV103	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE			125 Cel		R-PSIP-T3	Not Qualified							NOT SPECIFIED	240	SILICON	2.6
ISV103	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified	37 pF				35 V		NOT SPECIFIED	240	SILICON
ISV153A	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PDIP-T2	Not Qualified	14.16 pF				30 V				SILICON
ISV101	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified	28 pF				15 V		NOT SPECIFIED	240	SILICON
ISV102	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE					R-PSIP-T2	Not Qualified	360 pF				30 V		NOT SPECIFIED	240	SILICON
1S2207(B)MC	Renesas Electronics	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		IN-LINE					R-PDIP-T2	Not Qualified		HIGH RELIABILITY							SILICON	2.2
1S2207(B)LC	Renesas Electronics	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		IN-LINE					R-PDIP-T2	Not Qualified		HIGH RELIABILITY							SILICON	2.2
1S2207(B)KC	Renesas Electronics	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		IN-LINE					R-PDIP-T2	Not Qualified		HIGH RELIABILITY							SILICON	2.2

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.