WIRE Varactor Diodes 268

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB910133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	14
BB119153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2	ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
BB119113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2	ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
BB909A113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BB417-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.1 uA	1	20 V	LONG FORM			100 Cel			O-LALF-W2	ISOLATED	Not Qualified										SILICON	2
BB119-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			2 uA	1	15 V	LONG FORM			200 Cel			O-LALF-W2	ISOLATED	Not Qualified										SILICON	1.3
BB119	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE				1		LONG FORM						O-LALF-W2	ISOLATED	Not Qualified		17 pF		DO-35						SILICON	1.3
BB911/AT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM	Varactors	30 V				O-LALF-W2	ISOLATED	Not Qualified		60 pF	MATCHED TO 2.5%	DO-34						SILICON	23.3
BB119116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE			.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2	ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
BB910153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	14
BB910113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	14
BB809	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified		39 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34		30 V				SILICON	8
BB909B143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2	ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
ZC822M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	22 pF								SILICON	5
ZC826	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	100 pF			20 %	25 V				SILICON	5
ZC821A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	15 pF			10 %	25 V				SILICON	5
ZC825AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	68 pF			10 %					SILICON	5
ZC824AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	47 pF			10 %					SILICON	5
ZC825N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					MATTE TIN	R-PSIP-W2		Not Qualified	.3 W	68 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC821	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	15 pF			20 %	25 V				SILICON	5
ZC822BM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	22 pF			5 %					SILICON	5
ZC824AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	47 pF			10 %					SILICON	5
ZC820BM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	10 pF			5 %					SILICON	4.5
ZC823M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					MATTE TIN	R-PSIP-W2		Not Qualified	.3 W	33 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC824BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	47 pF			5 %					SILICON	5
ZC820AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	10 pF			10 %					SILICON	4.5
ZC826M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					MATTE TIN	R-PSIP-W2		Not Qualified	.3 W	100 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC825M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					MATTE TIN	R-PSIP-W2		Not Qualified	.3 W	68 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC823BM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	33 pF			5 %					SILICON	5
ZC823AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	33 pF			10 %					SILICON	5
ZC822A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	22 pF			10 %	25 V				SILICON	5
ZC824M	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	47 pF								SILICON	5
ZC822N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	22 pF								SILICON	5
ZC826N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					MATTE TIN	R-PSIP-W2		Not Qualified	.3 W	100 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC825AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	68 pF			10 %					SILICON	5
ZC825A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	68 pF			10 %	25 V				SILICON	5
ZC825	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	68 pF			20 %	25 V				SILICON	5
ZC821BM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	15 pF			5 %					SILICON	4.5
ZC821B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	15 pF			5 %	25 V				SILICON	5
ZC821AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	15 pF			10 %					SILICON	4.5
ZC820B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	10 pF			5 %	25 V				SILICON	5
ZC826A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	100 pF			10 %	25 V				SILICON	5
ZC823N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE					MATTE TIN	R-PSIP-W2		Not Qualified	.3 W	33 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC824A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	47 pF			10 %	25 V				SILICON	5
ZC823AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	33 pF			10 %					SILICON	5
ZC820AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	10 pF			10 %					SILICON	4.5
ZC823BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	33 pF			5 %					SILICON	5
ZC824N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		IN-LINE						R-PSIP-W2		Not Qualified	.3 W	47 pF								SILICON	5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.