WIRE Varactor Diodes 268

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

ZC821N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

SILICON

4.5

ZC822AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

10 %

SILICON

5

ZC822BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

5 %

SILICON

5

ZC826AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

100 pF

10 %

SILICON

5

ZC825BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

68 pF

5 %

SILICON

5

ZC820A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

10 pF

10 %

25 V

SILICON

5

ZC820BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

5 %

SILICON

4.5

ZC820M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

SILICON

4.5

ZC823

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

33 pF

20 %

25 V

SILICON

5

ZC820

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

10 pF

20 %

25 V

SILICON

5

ZC823A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

33 pF

10 %

25 V

SILICON

5

ZC826BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

100 pF

5 %

SILICON

5

ZC823B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

33 pF

5 %

25 V

SILICON

5

ZC824BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

5 %

SILICON

5

ZC821M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

SILICON

4.5

ZC824B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

47 pF

5 %

25 V

SILICON

5

ZC825BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

68 pF

5 %

SILICON

5

ZC821AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

10 %

SILICON

4.5

ZC820N

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

SILICON

4.5

ZC824

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

47 pF

20 %

25 V

SILICON

5

ZC821BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

15 pF

5 %

SILICON

4.5

ZC822

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

22 pF

20 %

25 V

SILICON

5

ZC825B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

68 pF

5 %

25 V

SILICON

5

ZC822AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

22 pF

10 %

SILICON

5

ZC826BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

100 pF

5 %

SILICON

5

ZC822B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

22 pF

5 %

25 V

SILICON

5

ZC826AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

100 pF

10 %

SILICON

5

ZC826B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

2

NO

ROUND

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

CYLINDRICAL

O-PBCY-W2

Not Qualified

.3 W

100 pF

5 %

25 V

SILICON

5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.