WRAP AROUND Varactor Diodes 16

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	JESD-30 Code	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	Minimum Breakdown Voltage	Diode Element Material	Minimum Diode Capacitance Ratio
BB215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	O-LELF-R2	ISOLATED	Not Qualified	16.5 pF	3% MATCHED SETS AVAILABLE		SILICON	7.6
BB249TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	8
BB240TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	14
BB249	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE	30 V	SILICON	8
BB249TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	8
BB241TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	21
BB240TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	14
BB241TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	21
BB215TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	7.6
BB219	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	O-LELF-R2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES	30 V	SILICON	12
BB215TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	7.6
BB219TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	12
BB240	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	O-LELF-R2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES	32 V	SILICON	14
BB219TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM				O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		SILICON	12
BB241	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	O-LELF-R2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES	32 V	SILICON	21
HVK89	Renesas Electronics	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	34 V		O-LELF-R2	ISOLATED	Not Qualified	11 pF		32 V	SILICON

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.