AXIAL Varactor Diodes 203

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	JESD-30 Code	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Minimum Breakdown Voltage	Diode Element Material	Minimum Diode Capacitance Ratio
BB417153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V	SILICON	2
BB909A133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	12
BB417	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM					O-LALF-W2	ISOLATED	Not Qualified			DO-34		SILICON	2
BB911-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES		32 V	SILICON	21
BB405B143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	7.6
BB911/A	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM					O-LALF-W2	ISOLATED	Not Qualified		MATCHED TO 2.5%	DO-34		SILICON	23.3
BB417-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.1 uA	1	20 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified					SILICON	2
BB119-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		2 uA	1	15 V	LONG FORM			200 Cel		O-LALF-W2	ISOLATED	Not Qualified					SILICON	1.3
BB911/A136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	23.3
BB909B116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	12
BB809143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	8
BB405B136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	7.6
BB119133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V	SILICON	1.3
BB809T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified	39 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34	30 V	SILICON	8
BB417113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V	SILICON	2
BB405B133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	7.6
BB405B116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	7.6
BB809153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	8
BB809-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		30 V	SILICON	8
BB405B113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	7.6
BB910-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES		32 V	SILICON	14
BB119136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V	SILICON	1.3
BB911/A133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	23.3
BB405B-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		30 V	SILICON	7.6
BB910136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	14
BB909B113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	12
BB909B136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	12
BB809AMO	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34	28 V	SILICON	8
BB405B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		30 V	SILICON	7.6
BB417116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V	SILICON	2
BB911/A143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	23.3
BB910	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM					O-LALF-W2	ISOLATED	Not Qualified		MATCHED TO 2.5%	DO-34		SILICON	14
BB910116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	14
BB909A136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	12
BB417143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V	SILICON	2
BB405B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified	11 pF	MATCHED TO 3%	DO-34		SILICON	7.6
BB911/A153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	23.3
BB405BT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	30 V			O-LALF-W2	ISOLATED	Not Qualified	11 pF	MATCHED TO 3%	DO-34		SILICON	7.6
BB405B153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	7.6
BB909B-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE		32 V	SILICON	12
BB417136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified			DO-34	30 V	SILICON	2
BB809133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	8
BB911/A116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	23.3
BB809113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		3% MATCHED SETS AVAILABLE	DO-34	30 V	SILICON	8
BB119143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V	SILICON	1.3
BB910133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel	O-LALF-W2	ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34	30 V	SILICON	14
BB119153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V	SILICON	1.3
BB119113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel		O-LALF-W2	ISOLATED	Not Qualified			DO-35	15 V	SILICON	1.3

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.