AXIAL Varactor Diodes 203

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

2803

Api Technologies

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

150

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

10 pF

DO-7

22 V

SILICON

4.9

1N5446A

Microsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

350

GLASS

SINGLE

ABRUPT

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

18 pF

HIGH RELIABILITY

DO-7

10 %

30 V

e0

SILICON

2.6

1N5470B

Microsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

33 pF

HIGH RELIABILITY

DO-7

5 %

30 V

e0

SILICON

2.9

1N5470A

Microsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

33 pF

HIGH RELIABILITY

DO-7

10 %

30 V

e0

SILICON

2.9

1N5470

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

33 pF

DO-7

20 %

30 V

e0

SILICON

2.9

1N5470C

Microsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

33 pF

HIGH RELIABILITY

DO-7

2 %

30 V

e0

SILICON

2.9

JANTXV1N5470B

Defense Logistics Agency

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

UNSPECIFIED

SINGLE

1

LONG FORM

O-XALF-W2

ISOLATED

Not Qualified

.4 W

33 pF

5 %

30 V

SILICON

2.9

MIL-19500/436A

PC123

Api Technologies

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

50

GLASS

SINGLE

ABRUPT

.5 uA

1

30 V

LONG FORM

Varactors

30 V

175 Cel

O-LALF-W2

ISOLATED

Not Qualified

.4 W

15 pF

SUPER Q

DO-7

20 %

SILICON

4.6

MV1401

Motorola

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

200

GLASS

SINGLE

HYPERABRUPT

.1 uA

1

10 V

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

550 pF

DO-204AB

15 %

12 V

e0

SILICON

14

MV1620

Motorola

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

300

GLASS

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

.1 uA

1

15 V

LONG FORM

Varactors

20 V

125 Cel

Tin/Lead (Sn/Pb)

O-LALF-W2

ISOLATED

Not Qualified

.4 W

6.8 pF

DO-204AA

20 V

e0

SILICON

2

TIV21

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

150

CERAMIC, GLASS-SEALED

SINGLE

ULTRA HIGH FREQUENCY

1

LONG FORM

Varactors

30 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

11 pF

AVAILABLE IN MATCHED SETS

DO-34

30 V

SILICON

4.5

TIV22

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

150

CERAMIC, GLASS-SEALED

SINGLE

ULTRA HIGH FREQUENCY

1

LONG FORM

Varactors

30 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

11 pF

AVAILABLE IN MATCHED SETS

DO-34

30 V

SILICON

4

TIV25

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

80

CERAMIC, GLASS-SEALED

SINGLE

VERY HIGH FREQUENCY

1

LONG FORM

Varactors

30 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

28 pF

AVAILABLE IN MATCHED SETS

DO-34

30 V

SILICON

4.5

TIV308

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

200

CERAMIC, GLASS-SEALED

SINGLE

1

LONG FORM

Varactors

20 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

11 pF

DO-35

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.4

TIV23

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

100

CERAMIC, GLASS-SEALED

SINGLE

ULTRA HIGH FREQUENCY

1

LONG FORM

Varactors

30 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

11 pF

AVAILABLE IN MATCHED SETS

DO-34

30 V

SILICON

4

TIV306

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

200

CERAMIC, GLASS-SEALED

SINGLE

1

LONG FORM

Varactors

20 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

7 pF

DO-35

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.2

TIV24

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

80

CERAMIC, GLASS-SEALED

SINGLE

VERY HIGH FREQUENCY

1

LONG FORM

Varactors

30 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

28 pF

AVAILABLE IN MATCHED SETS

DO-34

30 V

SILICON

3.5

TIV307

Texas Instruments

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

200

CERAMIC, GLASS-SEALED

SINGLE

1

LONG FORM

Varactors

20 V

O-GALF-W2

ISOLATED

Not Qualified

.25 W

9 pF

DO-35

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.3

1N5446ARL

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

350

GLASS

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.4 W

18 pF

DO-204AA

10 %

30 V

SILICON

2.6

1N5447

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

350

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

20 pF

DO-7

20 %

30 V

e0

SILICON

2.6

MV1648

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.4 W

82 pF

DO-204AA

10 %

20 V

SILICON

2

1N5473

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

300

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

56 pF

DO-7

20 %

30 V

e0

SILICON

2.9

1N5443

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

400

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

10 pF

DO-7

20 %

30 V

e0

SILICON

2.6

1N5448ARL

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

350

GLASS

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.4 W

22 pF

DO-204AA

10 %

30 V

SILICON

2.6

1N4792

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

20 V

LONG FORM

Varactors

20 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

22 pF

DO-7

20 %

22 V

e0

SILICON

2.35

1N4803

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

100 V

LONG FORM

Varactors

100 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

10 pF

DO-7

20 %

110 V

e0

SILICON

2.34

1N5700

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

400

GLASS

SINGLE

ABRUPT

.00000002 uA

1

60 V

LONG FORM

Varactors

60 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

15 pF

DO-7

20 %

65 V

e0

SILICON

2.8

1N5692

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

300

GLASS

SINGLE

ABRUPT

.00000002 uA

1

40 V

LONG FORM

Varactors

40 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

56 pF

DO-7

20 %

45 V

e0

SILICON

3.3

MV1628

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

15 pF

DO-204AA

10 %

20 V

e0

SILICON

2

1N5697

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

450

GLASS

SINGLE

ABRUPT

.00000002 uA

1

60 V

LONG FORM

Varactors

60 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

8.2 pF

DO-7

20 %

65 V

e0

SILICON

2.7

1N5441

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

450

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

6.8 pF

DO-7

20 %

30 V

e0

SILICON

2.5

1N4805

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

100 V

LONG FORM

Varactors

100 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

15 pF

DO-7

20 %

110 V

e0

SILICON

2.37

1N4812

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

40 V

LONG FORM

Varactors

40 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

56 pF

DO-7

20 %

44 V

e0

SILICON

2.32

1N4793

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.005 uA

1

20 V

LONG FORM

Varactors

20 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

27 pF

DO-7

20 %

22 V

e0

SILICON

2.35

1N4810

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.005 uA

1

55 V

LONG FORM

Varactors

55 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

39 pF

DO-7

20 %

61 V

e0

SILICON

2.34

1N5465

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

550

GLASS

SINGLE

ABRUPT

.02 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

15 pF

DO-7

20 %

30 V

e0

SILICON

2.8

1N5683

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

550

GLASS

SINGLE

ABRUPT

.00000002 uA

1

40 V

LONG FORM

Varactors

40 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

10 pF

DO-7

20 %

45 V

e0

SILICON

3.2

MV1626

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

12 pF

DO-204AA

10 %

20 V

e0

SILICON

2

1N5456

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

175

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

100 pF

DO-7

20 %

30 V

e0

SILICON

2.7

1N5452

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

250

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

47 pF

DO-7

20 %

30 V

e0

SILICON

2.6

1N5469

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

27 pF

DO-7

20 %

30 V

e0

SILICON

2.9

1N5454

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

175

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

68 pF

DO-7

20 %

30 V

e0

SILICON

2.7

1N4798

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

15 V

LONG FORM

Varactors

15 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

68 pF

DO-7

20 %

17 V

e0

SILICON

2.3

1N4796

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.005 uA

1

20 V

LONG FORM

Varactors

20 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

47 pF

DO-7

20 %

22 V

e0

SILICON

2.33

1N5684

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

550

GLASS

SINGLE

ABRUPT

.00000002 uA

1

40 V

LONG FORM

Varactors

40 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

12 pF

DO-7

20 %

45 V

e0

SILICON

3.2

1N5694

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

225

GLASS

SINGLE

ABRUPT

.00000002 uA

1

40 V

LONG FORM

Varactors

40 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

82 pF

DO-7

20 %

45 V

e0

SILICON

3.3

1N5708

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

175

GLASS

SINGLE

ABRUPT

.00000002 uA

1

60 V

LONG FORM

Varactors

60 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

68 pF

DO-7

20 %

65 V

e0

SILICON

3.2

1N5148

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

200

GLASS

SINGLE

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.4 W

47 pF

DO-204AA

10 %

60 V

SILICON

3.2

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.