Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Config | Variable Capacitance Diode Classification | Frequency Band | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Reverse Recovery Time | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | JEDEC-95 Code | Diode Cap Tolerance | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Api Technologies |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
150 |
GLASS |
SINGLE |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1 |
LONG FORM |
O-LALF-W2 |
ISOLATED |
Not Qualified |
10 pF |
DO-7 |
22 V |
SILICON |
4.9 |
||||||||||||||||||||||
Microsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
350 |
GLASS |
SINGLE |
ABRUPT |
1 |
LONG FORM |
175 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
18 pF |
HIGH RELIABILITY |
DO-7 |
10 % |
30 V |
e0 |
SILICON |
2.6 |
||||||||||||||||
Microsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
500 |
GLASS |
SINGLE |
ABRUPT |
1 |
LONG FORM |
175 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
33 pF |
HIGH RELIABILITY |
DO-7 |
5 % |
30 V |
e0 |
SILICON |
2.9 |
||||||||||||||||
Microsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
500 |
GLASS |
SINGLE |
ABRUPT |
1 |
LONG FORM |
175 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
33 pF |
HIGH RELIABILITY |
DO-7 |
10 % |
30 V |
e0 |
SILICON |
2.9 |
||||||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
500 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
33 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.9 |
||||||||||||
Microsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
500 |
GLASS |
SINGLE |
ABRUPT |
1 |
LONG FORM |
175 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
33 pF |
HIGH RELIABILITY |
DO-7 |
2 % |
30 V |
e0 |
SILICON |
2.9 |
||||||||||||||||
Defense Logistics Agency |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
500 |
UNSPECIFIED |
SINGLE |
1 |
LONG FORM |
O-XALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
33 pF |
5 % |
30 V |
SILICON |
2.9 |
MIL-19500/436A |
|||||||||||||||||||||
Api Technologies |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
50 |
GLASS |
SINGLE |
ABRUPT |
.5 uA |
1 |
30 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
15 pF |
SUPER Q |
DO-7 |
20 % |
SILICON |
4.6 |
|||||||||||||||
Motorola |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
200 |
GLASS |
SINGLE |
HYPERABRUPT |
.1 uA |
1 |
10 V |
LONG FORM |
175 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
550 pF |
DO-204AB |
15 % |
12 V |
e0 |
SILICON |
14 |
|||||||||||||||
Motorola |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
300 |
GLASS |
SINGLE |
ABRUPT |
ULTRA HIGH FREQUENCY |
.1 uA |
1 |
15 V |
LONG FORM |
Varactors |
20 V |
125 Cel |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
6.8 pF |
DO-204AA |
20 V |
e0 |
SILICON |
2 |
|||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
150 |
CERAMIC, GLASS-SEALED |
SINGLE |
ULTRA HIGH FREQUENCY |
1 |
LONG FORM |
Varactors |
30 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
11 pF |
AVAILABLE IN MATCHED SETS |
DO-34 |
30 V |
SILICON |
4.5 |
||||||||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
150 |
CERAMIC, GLASS-SEALED |
SINGLE |
ULTRA HIGH FREQUENCY |
1 |
LONG FORM |
Varactors |
30 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
11 pF |
AVAILABLE IN MATCHED SETS |
DO-34 |
30 V |
SILICON |
4 |
||||||||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
80 |
CERAMIC, GLASS-SEALED |
SINGLE |
VERY HIGH FREQUENCY |
1 |
LONG FORM |
Varactors |
30 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
28 pF |
AVAILABLE IN MATCHED SETS |
DO-34 |
30 V |
SILICON |
4.5 |
||||||||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
200 |
CERAMIC, GLASS-SEALED |
SINGLE |
1 |
LONG FORM |
Varactors |
20 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
11 pF |
DO-35 |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
2.4 |
||||||||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
100 |
CERAMIC, GLASS-SEALED |
SINGLE |
ULTRA HIGH FREQUENCY |
1 |
LONG FORM |
Varactors |
30 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
11 pF |
AVAILABLE IN MATCHED SETS |
DO-34 |
30 V |
SILICON |
4 |
||||||||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
200 |
CERAMIC, GLASS-SEALED |
SINGLE |
1 |
LONG FORM |
Varactors |
20 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
7 pF |
DO-35 |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
2.2 |
||||||||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
80 |
CERAMIC, GLASS-SEALED |
SINGLE |
VERY HIGH FREQUENCY |
1 |
LONG FORM |
Varactors |
30 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
28 pF |
AVAILABLE IN MATCHED SETS |
DO-34 |
30 V |
SILICON |
3.5 |
||||||||||||||||||
Texas Instruments |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
200 |
CERAMIC, GLASS-SEALED |
SINGLE |
1 |
LONG FORM |
Varactors |
20 V |
O-GALF-W2 |
ISOLATED |
Not Qualified |
.25 W |
9 pF |
DO-35 |
20 V |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
2.3 |
||||||||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
350 |
GLASS |
SINGLE |
ABRUPT |
ULTRA HIGH FREQUENCY |
1 |
LONG FORM |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
18 pF |
DO-204AA |
10 % |
30 V |
SILICON |
2.6 |
|||||||||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
350 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
20 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.6 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 |
LONG FORM |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
82 pF |
DO-204AA |
10 % |
20 V |
SILICON |
2 |
||||||||||||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
300 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
56 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.9 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
400 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
10 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.6 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
350 |
GLASS |
SINGLE |
ABRUPT |
ULTRA HIGH FREQUENCY |
1 |
LONG FORM |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
22 pF |
DO-204AA |
10 % |
30 V |
SILICON |
2.6 |
|||||||||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.000000005 uA |
1 |
20 V |
LONG FORM |
Varactors |
20 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
22 pF |
DO-7 |
20 % |
22 V |
e0 |
SILICON |
2.35 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.000000005 uA |
1 |
100 V |
LONG FORM |
Varactors |
100 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
10 pF |
DO-7 |
20 % |
110 V |
e0 |
SILICON |
2.34 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
400 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
60 V |
LONG FORM |
Varactors |
60 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
15 pF |
DO-7 |
20 % |
65 V |
e0 |
SILICON |
2.8 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
300 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
40 V |
LONG FORM |
Varactors |
40 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
56 pF |
DO-7 |
20 % |
45 V |
e0 |
SILICON |
3.3 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
15 pF |
DO-204AA |
10 % |
20 V |
e0 |
SILICON |
2 |
||||||||||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
450 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
60 V |
LONG FORM |
Varactors |
60 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
8.2 pF |
DO-7 |
20 % |
65 V |
e0 |
SILICON |
2.7 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
450 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
6.8 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.5 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.000000005 uA |
1 |
100 V |
LONG FORM |
Varactors |
100 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
15 pF |
DO-7 |
20 % |
110 V |
e0 |
SILICON |
2.37 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.000000005 uA |
1 |
40 V |
LONG FORM |
Varactors |
40 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
56 pF |
DO-7 |
20 % |
44 V |
e0 |
SILICON |
2.32 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.005 uA |
1 |
20 V |
LONG FORM |
Varactors |
20 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
27 pF |
DO-7 |
20 % |
22 V |
e0 |
SILICON |
2.35 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.005 uA |
1 |
55 V |
LONG FORM |
Varactors |
55 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
39 pF |
DO-7 |
20 % |
61 V |
e0 |
SILICON |
2.34 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
550 |
GLASS |
SINGLE |
ABRUPT |
.02 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
15 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.8 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
550 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
40 V |
LONG FORM |
Varactors |
40 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
10 pF |
DO-7 |
20 % |
45 V |
e0 |
SILICON |
3.2 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
SINGLE |
1 |
LONG FORM |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
12 pF |
DO-204AA |
10 % |
20 V |
e0 |
SILICON |
2 |
||||||||||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
175 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
100 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.7 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
250 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
47 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.6 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
500 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
27 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.9 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
175 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
25 V |
LONG FORM |
Varactors |
30 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
68 pF |
DO-7 |
20 % |
30 V |
e0 |
SILICON |
2.7 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.000000005 uA |
1 |
15 V |
LONG FORM |
Varactors |
15 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
68 pF |
DO-7 |
20 % |
17 V |
e0 |
SILICON |
2.3 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
15 |
GLASS |
SINGLE |
ABRUPT |
.005 uA |
1 |
20 V |
LONG FORM |
Varactors |
20 V |
150 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.5 W |
47 pF |
DO-7 |
20 % |
22 V |
e0 |
SILICON |
2.33 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
550 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
40 V |
LONG FORM |
Varactors |
40 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
12 pF |
DO-7 |
20 % |
45 V |
e0 |
SILICON |
3.2 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
225 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
40 V |
LONG FORM |
Varactors |
40 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
82 pF |
DO-7 |
20 % |
45 V |
e0 |
SILICON |
3.3 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
175 |
GLASS |
SINGLE |
ABRUPT |
.00000002 uA |
1 |
60 V |
LONG FORM |
Varactors |
60 V |
175 Cel |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
68 pF |
DO-7 |
20 % |
65 V |
e0 |
SILICON |
3.2 |
||||||||||||
Onsemi |
VARIABLE CAPACITANCE DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
200 |
GLASS |
SINGLE |
1 |
LONG FORM |
O-LALF-W2 |
ISOLATED |
Not Qualified |
.4 W |
47 pF |
DO-204AA |
10 % |
60 V |
SILICON |
3.2 |
Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.
Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.
Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.
Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.