DUAL Varactor Diodes 1,767

Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

SVC276

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

3

YES

RECTANGULAR

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

16 V

125 Cel

R-PDSO-F3

Not Qualified

76.75 pF

3.94 %

14 V

SILICON

3.1

SVC272

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

3

YES

RECTANGULAR

150

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

VERY HIGH FREQUENCY

.05 uA

2

10 V

SMALL OUTLINE

16 V

125 Cel

R-PDSO-F3

47.365 pF

5.18 %

14 V

SILICON

2.3

MMBV3102LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

22 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

11.11 %

30 V

e0

30

235

SILICON

4.5

MMBV105GLT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

2.15 pF

HIGH RELIABILITY

TO-236AB

30.23 %

30 V

e0

30

235

SILICON

4

MMVL105GT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

TIN

R-PDSO-G2

1

Not Qualified

.2 W

2.15 pF

HIGH RELIABILITY

30.23 %

30 V

e3

30

260

SILICON

4

MMVL105GT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G2

1

Not Qualified

.2 W

2.15 pF

HIGH RELIABILITY

30.23 %

30 V

e0

30

235

SILICON

4

MMVL2105T1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN LEAD

R-PDSO-G2

1

Not Qualified

.2 W

15 pF

HIGH RELIABILITY

10 %

30 V

e0

SILICON

2.5

SVC203C

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

60

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

VERY HIGH FREQUENCY

.05 uA

2

10 V

SMALL OUTLINE

16 V

125 Cel

R-PDSO-G3

62.39 pF

5.75 %

16 V

SILICON

4.6

SVC364K

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

2 BANKS, COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

3.22 %

16 V

SILICON

17.5

MMBV432LT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

100

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

VERY HIGH FREQUENCY

2

SMALL OUTLINE

Varactors

14 V

TIN

R-PDSO-G3

1

Not Qualified

.225 W

45.55 pF

HIGH Q, 1% MATCHING GUARANTEED

TO-236AB

5.6 %

14 V

e3

30

260

SILICON

1.5

MMBV2103L

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

150 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

.225 W

10 pF

HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

SILICON

2.5

SVC353R

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 3 ELEMENTS

3

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

3.26 %

16 V

SILICON

17.5

MMVL109T1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

TIN

R-PDSO-G2

1

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

10.34 %

30 V

e3

30

260

SILICON

5

MMBV105GLT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

.225 W

2.15 pF

HIGH RELIABILITY

TO-236AB

30.23 %

30 V

e3

30

260

SILICON

4

MMBV2103LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

TIN LEAD

R-PDSO-G3

1

Not Qualified

.225 W

10 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

235

SILICON

2.5

MMVL809T1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

TIN

R-PDSO-G2

1

Not Qualified

.2 W

5.3 pF

HIGH RELIABILITY

15.09 %

20 V

e3

30

260

SILICON

1.8

SVC354S

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMPLEX

3

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

3.31 %

16 V

SILICON

17.5

SVC353S

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 3 ELEMENTS

3

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

3.31 %

16 V

SILICON

17.5

MMBV2101LT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

450

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

TIN

R-PDSO-G3

1

Not Qualified

.225 W

6.8 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e3

30

260

SILICON

2.5

SVC353T

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 3 ELEMENTS

3

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

3.35 %

16 V

SILICON

17.5

MMBV409LT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

TIN

R-PDSO-G3

1

Not Qualified

.225 W

29 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10.34 %

20 V

e3

30

260

SILICON

1.5

MMBV609LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

VERY HIGH FREQUENCY

2

SMALL OUTLINE

Varactors

20 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

29 pF

HIGH Q

TO-236AB

10.34 %

20 V

e0

30

235

SILICON

1.8

MMVL809T1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

TIN LEAD

R-PDSO-G2

1

Not Qualified

.2 W

5.3 pF

HIGH RELIABILITY

15.09 %

20 V

e0

235

SILICON

1.8

MMBV2101L

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

450

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

TIN LEAD

R-PDSO-G3

Not Qualified

.225 W

6.8 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

SILICON

2.5

SVC364

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

2 BANKS, COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

52 pF

7.76 %

16 V

SILICON

17.5

MMBV2107LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

350

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

22 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

30

235

SILICON

2.5

SVC381-TL-E

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

2

SMALL OUTLINE

125 Cel

Tin/Bismuth (Sn/Bi)

R-PDSO-G3

1

427.5 pF

4.09 %

16 V

e6

SILICON

15

MMBV109LT3G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

TIN

R-PDSO-G3

1

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-236AB

10.34 %

30 V

e3

260

SILICON

5

MMVL2101T1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

TIN LEAD

R-PDSO-G2

1

Not Qualified

.2 W

6.8 pF

HIGH RELIABILITY

10 %

30 V

e0

235

SILICON

2.5

SVC236

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

70

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

ABRUPT

VERY HIGH FREQUENCY

.05 uA

2

10 V

SMALL OUTLINE

16 V

125 Cel

R-PDSO-G3

97.095 pF

16 V

SILICON

5

MMBV2105LT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

150 Cel

TIN

R-PDSO-G3

1

Not Qualified

.225 W

15 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e3

30

260

SILICON

2.5

MMBV2108LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

27 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

30

235

SILICON

2.5

MMVL409T1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

Tin/Lead (Sn/Pb)

R-PDSO-G2

1

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

10.34 %

20 V

e0

30

235

SILICON

1.5

MMVL109T1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G2

1

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

10.34 %

30 V

e0

30

235

SILICON

5

SVC354

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMPLEX

3

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

52 pF

8 %

16 V

SILICON

17.5

SVC371

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMPLEX

5

SMALL OUTLINE

Varactors

16 V

R-PDSO-G8

Not Qualified

500 pF

8 %

16 V

SILICON

18.5

MMBV809LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

75

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

5.3 pF

HIGH RELIABILITY

TO-236AB

15.09 %

20 V

e0

30

235

SILICON

1.8

MMBV2109LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

33 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

30

235

SILICON

2.5

SVC389-TL-E

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

MEDIUM FREQUENCY

.1 uA

2

9 V

SMALL OUTLINE

16 V

150 Cel

Tin/Bismuth (Sn/Bi)

R-PDSO-G3

1

497.5 pF

5.53 %

16 V

e6

SILICON

19.5

SMMBV809LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

75

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN LEAD

R-PDSO-G3

1

Not Qualified

.225 W

5.3 pF

HIGH RELIABILITY

TO-236AB

15.09 %

20 V

e0

SILICON

1.8

MMBV2109L

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

TIN LEAD

R-PDSO-G3

Not Qualified

.225 W

33 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

SILICON

2.5

MBV109T1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

.28 W

29 pF

10.34 %

30 V

e0

SILICON

5

MMBV809LT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

75

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

TIN

R-PDSO-G3

1

Not Qualified

.225 W

5.3 pF

HIGH RELIABILITY

TO-236AB

15.09 %

20 V

e3

30

260

SILICON

1.8

MMVL229AT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

15 V

TIN LEAD

R-PDSO-G2

Not Qualified

15 pF

6.67 %

e0

SILICON

2

MMBV109LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-236AB

10.34 %

30 V

e0

30

235

SILICON

5

MMBV809LT3

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

75

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

TIN LEAD

R-PDSO-G3

1

Not Qualified

.225 W

5.3 pF

HIGH RELIABILITY

TO-236AB

15.09 %

20 V

e0

235

SILICON

1.8

SVC704

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

.05 uA

1

10 V

SMALL OUTLINE

16 V

150 Cel

R-PDSO-F3

28 pF

7.14 %

16 V

SILICON

6

MMBV2105L

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

TIN LEAD

R-PDSO-G3

Not Qualified

.225 W

15 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

SILICON

2.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.