DUAL Varactor Diodes 1,767

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  2. Varactor Diodes
Manufacturers
    • Api Technologies
    • Broadcom
    • Defense Logistics Agency
    • Diodes Incorporated
    • Infineon Technologies
    • M/a-com Technology Solutions
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • Onsemi
    • Renesas Electronics
    • STMicroelectronics
    • Skyworks Solutions
    • TE Connectivity
    • Texas Instruments
    • Toshiba
Diode Type
    • VARIABLE CAPACITANCE DIODE
Terminal Position (1)
    • DUAL
    • AXIAL
    • BOTTOM
    • END
    • SINGLE
    • UNSPECIFIED
    • UPPER
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
    • WRAP AROUND
No. of Terminals
    • 1
    • 2
    • 3
    • 4
    • 6
    • 8
Surface Mount
    • NO
    • YES
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Minimum Quality Factor
    • 10
    • 100
    • 1000
    • 133
    • 1400
    • 15
    • 150
    • 1500
    • 175
    • 190
    • 20
    • 200
    • 2000
    • 225
    • 2400
    • 25
    • 250
    • 280
    • 30
    • 300
    • 3000
    • 3200
    • 325
    • 33
    • 35
    • 350
    • 3500
    • 375
    • 400
    • 4000
    • 45
    • 450
    • 5
    • 50
    • 500
    • 550
    • 60
    • 600
    • 66
    • 70
    • 700
    • 75
    • 750
    • 80
    • 800
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • GLASS
    • PLASTIC/EPOXY
    • UNSPECIFIED
Config
    • 2 BANKS, COMMON CATHODE, 2 ELEMENTS
    • COMMON ANODE, 2 ELEMENTS
    • COMMON CATHODE, 2 ELEMENTS
    • COMMON CATHODE, 3 ELEMENTS
    • COMPLEX
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 3 ELEMENTS
    • SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
    • SINGLE
Variable Capacitance Diode Classification
    • ABRUPT
    • HYPERABRUPT
Frequency Band
    • HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • KA BAND
    • L BAND
    • MEDIUM FREQUENCY
    • MILLIMETER WAVE BAND
    • S BAND
    • ULTRA HIGH FREQUENCY
    • ULTRA HIGH FREQUENCY TO KA BAND
    • ULTRA HIGH FREQUENCY TO L BAND
    • VERY HIGH FREQUENCY
    • VERY HIGH FREQUENCY TO KU BAND
    • VERY HIGH FREQUENCY TO L BAND
    • VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
    • X BAND
Maximum Output Current
    • .1 A
Maximum Forward Voltage (VF)
    • .715 V
Maximum Reverse Recovery Time
    • .004 us
Maximum Reverse Current
    • .000000003 uA
    • .000000005 uA
    • .00000001 uA
    • .00000002 uA
    • .00000005 uA
    • .0000001 uA
    • .003 uA
    • .005 uA
    • .01 uA
    • .02 uA
    • .05 uA
    • .1 uA
    • .2 uA
    • .5 uA
    • 2 uA
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
Reverse Test Voltage
    • 10 V
    • 100 V
    • 12 V
    • 15 V
    • 16 V
    • 17.6 V
    • 19 V
    • 20 V
    • 25 V
    • 26 V
    • 28 V
    • 30 V
    • 32 V
    • 4 V
    • 40 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 8 V
    • 9 V
    • 90 V
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • IN-LINE
    • LONG FORM
    • MICROWAVE
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • Other Diodes
    • Rectifier Diodes
    • Signal Diodes
    • Varactors
Maximum Repetitive Peak Reverse Voltage
    • 10 V
    • 100 V
    • 12 V
    • 120 V
    • 13 V
    • 14 V
    • 140 V
    • 15 V
    • 16 V
    • 18 V
    • 20 V
    • 22 V
    • 25 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 34 V
    • 35 V
    • 36 V
    • 40 V
    • 48 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 65 V
    • 7 V
    • 8 V
    • 85 V
    • 9 V
    • 90 V
Maximum Operating Temperature
    • 100 Cel
    • 125 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 85 Cel
Minimum Operating Temperature
    • -55 Cel
    • -65 Cel
Terminal Finish
    • MATTE TIN
    • Matte Tin (Sn)
    • TIN
    • TIN BISMUTH
    • TIN LEAD
    • TIN SILVER COPPER
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
JESD-30 Code
    • O-CEMW-N2
    • O-GALF-W2
    • O-LALF-W2
    • O-LELF-R2
    • O-PBCY-T2
    • O-PBCY-T3
    • O-PBCY-W2
    • O-PBCY-W3
    • O-XALF-W2
    • O-XAMW-G2
    • O-XBCY-T3
    • O-XEMW-N2
    • R-CBCC-N2
    • R-CBCC-N3
    • R-PBCC-N2
    • R-PBCC-N3
    • R-PDIP-T2
    • R-PDSO-F2
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PDSO-N2
    • R-PDSO-X
    • R-PSIP-T2
    • R-PSIP-T3
    • R-PSIP-W2
    • R-XBCC-N2
    • R-XBCC-N3
    • R-XBCC-N4
    • R-XDSO-F2
    • R-XDSO-N2
    • S-XUUC-N1
    • X-XXMW-F2
Moisture Sensitivity Level (MSL)
    • 1
    • NOT APPLICABLE
Case Connection
    • CATHODE
    • ISOLATED
Qualification
    • Not Qualified
Maximum Power Dissipation
    • .1 W
    • .15 W
    • .2 W
    • .225 W
    • .25 W
    • .28 W
    • .3 W
    • .33 W
    • .4 W
    • .5 W
    • .75 W
    • .8 W
Nominal Diode Capacitance
    • .1 pF
    • .225 pF
    • .3 pF
    • .4 pF
    • .45 pF
    • .5 pF
    • .6 pF
    • .75 pF
    • .8 pF
    • .86 pF
    • .9 pF
    • 1 pF
    • 1.01 pF
    • 1.055 pF
    • 1.1 pF
    • 1.2 pF
    • 1.3 pF
    • 1.305 pF
    • 1.36 pF
    • 1.37 pF
    • 1.5 pF
    • 1.575 pF
    • 1.58 pF
    • 1.8 pF
    • 1.85 pF
    • 1.86 pF
    • 1.89 pF
    • 1.9 pF
    • 1.95 pF
    • 10 pF
    • 10.1 pF
    • 10.25 pF
    • 10.4 pF
    • 10.45 pF
    • 10.5 pF
    • 10.515 pF
    • 10.55 pF
    • 100 pF
    • 102 pF
    • 11 pF
    • 11.5 pF
    • 11.6 pF
    • 12 pF
    • 12.5 pF
    • 12.7 pF
    • 120 pF
    • 13 pF
    • 13.25 pF
    • 13.8 pF
    • 14 pF
    • 14.16 pF
    • 14.2 pF
    • 14.5 pF
    • 14.8 pF
    • 14.95 pF
    • 15 pF
    • 15.2 pF
    • 15.21 pF
    • 15.29 pF
    • 15.3 pF
    • 15.75 pF
    • 15.8 pF
    • 15.81 pF
    • 16 pF
    • 16.25 pF
    • 16.5 pF
    • 17 pF
    • 17.5 pF
    • 17.75 pF
    • 175 pF
    • 18 pF
    • 18.22 pF
    • 18.3 pF
    • 18.5 pF
    • 18.6 pF
    • 18.7 pF
    • 18.75 pF
    • 19 pF
    • 19.1 pF
    • 19.11 pF
    • 19.23 pF
    • 19.25 pF
    • 19.3 pF
    • 19.7 pF
    • 19.74 pF
    • 19.75 pF
    • 19.9 pF
    • 19.92 pF
    • 2 pF
    • 2.05 pF
    • 2.1 pF
    • 2.11 pF
    • 2.145 pF
    • 2.15 pF
    • 2.2 pF
    • 2.3 pF
    • 2.5 pF
    • 2.525 pF
    • 2.6 pF
    • 2.7 pF
    • 2.75 pF
    • 2.85 pF
    • 2.88 pF
    • 20 pF
    • 20.2 pF
    • 20.25 pF
    • 21.26 pF
    • 22 pF
    • 22.5 pF
    • 22.75 pF
    • 23 pF
    • 23.6 pF
    • 24 pF
    • 24.15 pF
    • 25 pF
    • 250 pF
    • 26 pF
    • 26.75 pF
    • 27 pF
    • 27.3 pF
    • 27.75 pF
    • 27.8 pF
    • 28 pF
    • 28.19 pF
    • 28.5 pF
    • 29 pF
    • 29.3 pF
    • 29.5 pF
    • 29.75 pF
    • 3 pF
    • 3.05 pF
    • 3.1 pF
    • 3.15 pF
    • 3.3 pF
    • 3.31 pF
    • 3.3135 pF
    • 3.34 pF
    • 3.4 pF
    • 3.43 pF
    • 3.5 pF
    • 3.59 pF
    • 3.665 pF
    • 3.73 pF
    • 3.8 pF
    • 3.85 pF
    • 3.93 pF
    • 30 pF
    • 30.1 pF
    • 30.3 pF
    • 30.5 pF
    • 30.85 pF
    • 31 pF
    • 31.25 pF
    • 31.5 pF
    • 31.75 pF
    • 32 pF
    • 33 pF
    • 33.5 pF
    • 34.85 pF
    • 35 pF
    • 35.22 pF
    • 35.5 pF
    • 36 pF
    • 36.09 pF
    • 36.99 pF
    • 360 pF
    • 37 pF
    • 37.25 pF
    • 37.91 pF
    • 38 pF
    • 38.3 pF
    • 38.5 pF
    • 38.65 pF
    • 38.84 pF
    • 388.1 pF
    • 39 pF
    • 39.3 pF
    • 39.5 pF
    • 4 pF
    • 4.2 pF
    • 4.25 pF
    • 4.35 pF
    • 4.4 pF
    • 4.45 pF
    • 4.5 pF
    • 4.6 pF
    • 4.65 pF
    • 4.7 pF
    • 4.75 pF
    • 4.86 pF
    • 4.9 pF
    • 4.95 pF
    • 40 pF
    • 40.65 pF
    • 41 pF
    • 41.8 pF
    • 42 pF
    • 42.75 pF
    • 427.5 pF
    • 43 pF
    • 43.25 pF
    • 43.45 pF
    • 43.75 pF
    • 430 pF
    • 435 pF
    • 439 pF
    • 44.25 pF
    • 44.75 pF
    • 440 pF
    • 45 pF
    • 45.25 pF
    • 45.55 pF
    • 45.75 pF
    • 450 pF
    • 459 pF
    • 46 pF
    • 46.1 pF
    • 46.75 pF
    • 460 pF
    • 461 pF
    • 462.8 pF
    • 47 pF
    • 47.365 pF
    • 47.5 pF
    • 470 pF
    • 473.05 pF
    • 48 pF
    • 485 pF
    • 49.5 pF
    • 497.5 pF
    • 5 pF
    • 5.3 pF
    • 5.4 pF
    • 5.6 pF
    • 50 pF
    • 500 pF
    • 503 pF
    • 51 pF
    • 52 pF
    • 52.5 pF
    • 524.6 pF
    • 53 pF
    • 55 pF
    • 550 pF
    • 56 pF
    • 56.5 pF
    • 57 pF
    • 58 pF
    • 6 pF
    • 6.19 pF
    • 6.2 pF
    • 6.5 pF
    • 6.6 pF
    • 6.7 pF
    • 6.8 pF
    • 6.82 pF
    • 6.9 pF
    • 60 pF
    • 62.39 pF
    • 64 pF
    • 67.5 pF
    • 68 pF
    • 68.7 pF
    • 69 pF
    • 7 pF
    • 7.05 pF
    • 7.15 pF
    • 7.37 pF
    • 7.4 pF
    • 7.45 pF
    • 7.5 pF
    • 7.65 pF
    • 7.8 pF
    • 7.85 pF
    • 70 pF
    • 76.75 pF
    • 8.2 pF
    • 8.31 pF
    • 8.6 pF
    • 8.7 pF
    • 8.8 pF
    • 81 pF
    • 82 pF
    • 9 pF
    • 9.1 pF
    • 9.3 pF
    • 9.5 pF
    • 95 pF
    • 97.095 pF
Additional Features
    • 0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 0.7% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 1% MATCHING GUARANTEED
    • 1.5% MATCHED SETS AVAILABLE
    • 1.6% MATCHED SETS AVAILABLE
    • 2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 2% MATCHED SETS AVAILABLE
    • 2% MATCHED SETS OF 10 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 5 DIODES ARE AVAILABLE
    • 2% MATCHED SETS OF 8 DIODES ARE AVAILABLE
    • 2.5% MATCHED GROUP AVAILABLE
    • 2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 2.5% MATCHED SETS ARE AVAILABLE
    • 3% MATCHED GROUP AVAILABLE
    • 3% MATCHED SETS ARE AVAILABLE
    • 3% MATCHED SETS ARE AVAILABLE ,3% MATCHED SET OF THREE DIODES
    • 3% MATCHED SETS ARE AVAILABLE, 3% MATCHED SET OF TWO DIODES
    • 3% MATCHED SETS AVAILABLE
    • 6% MATCHED GROUP AVAILABLE
    • 6% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR
    • 6% MATCHED SETS ARE AVAILABLE, SMALL TRACKING ERROR
    • AVAILABLE IN MATCHED SETS
    • CAPACITANCE MATCHED TO 1.5%
    • CAPACITANCE MATCHED TO 2%
    • CAPACITANCE MATCHED TO 2.5%
    • CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES
    • CAPACITANCE MATCHED TO 2.5% FOR FOUR DEVICES
    • CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES
    • CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES
    • CAPACITANCE MATCHED TO 3%
    • CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES
    • CAPACITANCE MATCHED TO 5 %, LOW INDUCTANCE
    • CAPACITANCE MATCHED TO 6%, SMALL TRACKING ERROR
    • EUROPEAN PART NUMBER
    • EXCELLENT MATCHING TO 1.6% DMA
    • EXCELLENT MATCHING TO 2% DMA
    • EXCELLENT MATCHING TO 2% DMA, HIGH LINEARITY, LOW SERIES RESISTANCE
    • HIGH Q
    • HIGH Q, 1% MATCHING GUARANTEED
    • HIGH Q, HIGH RELIABILITY
    • HIGH Q, LOW INDUCTANCE
    • HIGH RELIABILITY
    • HIGH RELIABILITY, EUROPEAN PART NUMBER
    • HIGH RELIABILITY, LOW LEAKAGE CURRENT
    • LOW INDUCTANCE
    • LOW NOISE
    • MATCHED PAIR AVAILABLE
    • MATCHED TO 2.5%
    • MATCHED TO 3%
    • SMALL TRACKING ERROR
    • SMALL TRACKING ERROR, 2% MATCHED SETS ARE AVAILABLE
    • SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE
    • SMALL TRACKING ERROR, CAPACITANCE MATCHED TO 2%
    • SMALL TRACKING ERROR, CAPACITANCE MATCHED TO 2.5%
    • SUPER Q
JEDEC-95 Code
    • DO-204AA
    • DO-204AB
    • DO-34
    • DO-35
    • DO-7
    • TO-226AC
    • TO-236AB
    • TO-261AA
    • TO-92
Diode Cap Tolerance
    • .5 %
    • 1 %
    • 1.64 %
    • 1.68 %
    • 1.71 %
    • 1.75 %
    • 10 %
    • 10.06 %
    • 10.11 %
    • 10.14 %
    • 10.2 %
    • 10.26 %
    • 10.29 %
    • 10.34 %
    • 10.45 %
    • 10.53 %
    • 10.56 %
    • 10.59 %
    • 10.64 %
    • 10.67 %
    • 10.77 %
    • 10.81 %
    • 10.9 %
    • 11.1 %
    • 11.11 %
    • 11.36 %
    • 12.07 %
    • 12.09 %
    • 12.13 %
    • 12.2 %
    • 12.24 %
    • 12.82 %
    • 12.92 %
    • 13.04 %
    • 14.28 %
    • 14.62 %
    • 15 %
    • 15.09 %
    • 15.15 %
    • 15.78 %
    • 16.63 %
    • 16.639 %
    • 16.64 %
    • 16.66 %
    • 18.75 %
    • 2 %
    • 2.53 %
    • 2.66 %
    • 2.67 %
    • 2.69 %
    • 2.7 %
    • 2.76 %
    • 2.85 %
    • 2.86 %
    • 2.872 %
    • 2.93 %
    • 20 %
    • 20.75 %
    • 21.73 %
    • 22.22 %
    • 23.81 %
    • 25.93 %
    • 3 %
    • 3.01 %
    • 3.03 %
    • 3.04 %
    • 3.062 %
    • 3.13 %
    • 3.19 %
    • 3.22 %
    • 3.26 %
    • 3.3 %
    • 3.31 %
    • 3.35 %
    • 3.36 %
    • 3.47 %
    • 3.5 %
    • 3.52 %
    • 3.53 %
    • 3.7 %
    • 3.75 %
    • 3.89 %
    • 3.9 %
    • 3.91 %
    • 3.93 %
    • 3.94 %
    • 3.95 %
    • 30.23 %
    • 33.33 %
    • 36 %
    • 4 %
    • 4.08 %
    • 4.09 %
    • 4.32 %
    • 4.41 %
    • 4.42 %
    • 4.43 %
    • 4.47 %
    • 4.57 %
    • 4.62 %
    • 4.65 %
    • 4.66 %
    • 4.68 %
    • 4.69 %
    • 4.76 %
    • 4.79 %
    • 4.84 %
    • 4.89 %
    • 4.92 %
    • 5 %
    • 5.02 %
    • 5.08 %
    • 5.1 %
    • 5.18 %
    • 5.23 %
    • 5.26 %
    • 5.35 %
    • 5.351 %
    • 5.36 %
    • 5.45 %
    • 5.46 %
    • 5.49 %
    • 5.51 %
    • 5.53 %
    • 5.54 %
    • 5.56 %
    • 5.59 %
    • 5.6 %
    • 5.66 %
    • 5.75 %
    • 5.85 %
    • 5.88 %
    • 5.95 %
    • 5.98 %
    • 6 %
    • 6.15 %
    • 6.17 %
    • 6.21 %
    • 6.25 %
    • 6.33 %
    • 6.35 %
    • 6.36 %
    • 6.45 %
    • 6.451 %
    • 6.48 %
    • 6.52 %
    • 6.54 %
    • 6.55 %
    • 6.56 %
    • 6.59 %
    • 6.67 %
    • 6.73 %
    • 6.81 %
    • 6.87 %
    • 6.89 %
    • 6.9 %
    • 6.93 %
    • 6.94 %
    • 7 %
    • 7.01 %
    • 7.04 %
    • 7.08 %
    • 7.09 %
    • 7.14 %
    • 7.25 %
    • 7.33 %
    • 7.43 %
    • 7.46 %
    • 7.5 %
    • 7.59 %
    • 7.6 %
    • 7.604 %
    • 7.64 %
    • 7.69 %
    • 7.7 %
    • 7.71 %
    • 7.72 %
    • 7.75 %
    • 7.76 %
    • 7.848 %
    • 7.85 %
    • 7.937 %
    • 7.94 %
    • 8 %
    • 8.05 %
    • 8.06 %
    • 8.09 %
    • 8.11 %
    • 8.33 %
    • 8.42 %
    • 8.43 %
    • 8.59 %
    • 8.62 %
    • 8.67 %
    • 8.72 %
    • 8.76 %
    • 8.77 %
    • 8.82 %
    • 9.07 %
    • 9.09 %
    • 9.15 %
    • 9.16 %
    • 9.21 %
    • 9.29 %
    • 9.3 %
    • 9.33 %
    • 9.39 %
    • 9.43 %
    • 9.52 %
    • 9.523 %
    • 9.68 %
    • 9.8 %
    • 9.85 %
Minimum Breakdown Voltage
    • 10 V
    • 110 V
    • 12 V
    • 13 V
    • 14 V
    • 15 V
    • 16 V
    • 17 V
    • 18 V
    • 20 V
    • 22 V
    • 25 V
    • 27 V
    • 28 V
    • 30 V
    • 32 V
    • 33 V
    • 34 V
    • 35 V
    • 44 V
    • 45 V
    • 50 V
    • 55 V
    • 6 V
    • 60 V
    • 61 V
    • 65 V
    • 66 V
    • 7 V
    • 72 V
    • 85 V
    • 90 V
    • 99 V
Maximum Non Repetitive Peak Forward Current
    • 4.5 A
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 20
    • 30
    • 40
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 220
    • 235
    • 240
    • 245
    • 260
    • NOT SPECIFIED
Diode Element Material
    • GALLIUM ARSENIDE
    • SILICON
Minimum Diode Capacitance Ratio
    • 1.1
    • 1.15
    • 1.2
    • 1.25
    • 1.3
    • 1.45
    • 1.5
    • 1.55
    • 1.6
    • 1.65
    • 1.68
    • 1.6929
    • 1.7
    • 1.72
    • 1.73
    • 1.74
    • 1.75
    • 1.8
    • 1.81
    • 1.88
    • 1.9
    • 10
    • 10.2
    • 10.3
    • 10.6
    • 10.7
    • 10.8
    • 11
    • 11.5
    • 12
    • 12.5
    • 13
    • 13.4
    • 13.5
    • 13.7
    • 14
    • 14.5
    • 14.8
    • 14.85
    • 15
    • 15.5
    • 16
    • 16.2
    • 17
    • 17.5
    • 17.7
    • 18.5
    • 19.5
    • 2
    • 2.02
    • 2.05
    • 2.08
    • 2.09
    • 2.1
    • 2.13
    • 2.15
    • 2.1924
    • 2.2
    • 2.24
    • 2.26
    • 2.28
    • 2.3
    • 2.32
    • 2.33
    • 2.34
    • 2.35
    • 2.36
    • 2.37
    • 2.38
    • 2.39
    • 2.4
    • 2.42
    • 2.43
    • 2.5
    • 2.55
    • 2.6
    • 2.62
    • 2.7
    • 2.73
    • 2.77
    • 2.79
    • 2.8
    • 2.81
    • 2.82
    • 2.83
    • 2.9
    • 2.941
    • 20
    • 20.6
    • 21
    • 22.5
    • 23
    • 23.3
    • 24
    • 3
    • 3.091
    • 3.1
    • 3.2
    • 3.25
    • 3.3
    • 3.4
    • 3.5
    • 3.55
    • 3.625
    • 3.7
    • 3.75
    • 3.8
    • 35
    • 4
    • 4.1
    • 4.2
    • 4.3
    • 4.45
    • 4.5
    • 4.6
    • 4.9
    • 5
    • 5.6
    • 5.9
    • 6
    • 6.2
    • 6.3
    • 7
    • 7.1
    • 7.12
    • 7.3
    • 7.6
    • 7.8
    • 8
    • 8.2
    • 8.45
    • 8.8
    • 8.9
    • 9
    • 9.5
    • 9.7
    • 9.8
Reference Standard
    • AEC-Q101
    • IEC-60134
    • MIL-19500/436A
Reset All
Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

BB640E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

e3

SILICON

19.5

BB135,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

19.25 pF

30 V

e3

30

260

SILICON

8.9

SMVA1248-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

R-PDSO-F2

.25 W

17 pF

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10.8

AEC-Q101

BB639E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

38.3 pF

LOW INDUCTANCE

5.26 %

30 V

e3

SILICON

9.8

MA46H120

TE Connectivity

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

3000

UNSPECIFIED

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

15 V

R-XDSO-N2

Not Qualified

.1 W

1.1 pF

20 V

GALLIUM ARSENIDE

BB914E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

TIN

R-PDSO-G3

1

Not Qualified

43.75 pF

1.5% MATCHED SETS AVAILABLE

2.86 %

18 V

e3

SILICON

2.28

SMV1249-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

600

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

.25 W

31 pF

15 V

e3

260

SILICON

11

SMV1247-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

1500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

7 pF

15 V

e3

40

260

SILICON

9.5

BBY6502VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

29.5 pF

4.41 %

15 V

e3

SILICON

10

BB844E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

43.75 pF

CAPACITANCE MATCHED TO 1.5%

2.86 %

18 V

e3

SILICON

3.2

SMV1232-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

1400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

SMALL OUTLINE

Varactors

15 V

TIN

R-PDSO-F2

1

Not Qualified

.25 W

2.6 pF

LOW NOISE

10 %

15 V

e3

260

SILICON

1.5

BBY5303WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

5.3 pF

9.43 %

6 V

e3

SILICON

1.8

KVX2162-23-0

Microchip Technology

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY TO L BAND

.05 uA

1

SMALL OUTLINE

Varactors

22 V

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

10 pF

HIGH RELIABILITY

10 %

22 V

SILICON

BB639CE7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

39 pF

7.01 %

35 V

e3

SILICON

9.5

SMVA1470-004LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

2

10 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

1

.25 W

70 pF

LOW NOISE

6 %

10 V

260

SILICON

5

AEC-Q101

BBY40,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

26 pF

30 V

e3

30

260

SILICON

5

BBY5502VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

18.6 pF

5.66 %

16 V

e3

SILICON

2

KVX2162-23-0/TR

Microchip Technology

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY TO L BAND

.05 uA

1

SMALL OUTLINE

22 V

125 Cel

-55 Cel

R-PDSO-G3

10 pF

HIGH RELIABILITY

10 %

22 V

SILICON

SMV2019-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

22 V

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

.8 pF

LOW NOISE

18.75 %

22 V

e3

40

260

SILICON

2.3

BB171X

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

R-PDSO-G2

1

57 pF

8.77 %

32 V

260

SILICON

20.6

IEC-60134

BB659C02VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

39 pF

7.01 %

35 V

e3

SILICON

9.5

BBY5303WE6327XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

5.3 pF

9.43 %

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.8

BBY5802VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

18.3 pF

4.89 %

10 V

e3

SILICON

1.15

SMVA1253-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

R-PDSO-F2

.25 W

53 pF

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

AEC-Q101

1SV290

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.01 uA

1

28 V

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

45.25 pF

2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR

9.39 %

30 V

e0

SILICON

15

1SV290B

Toshiba

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

35 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR

9.39 %

30 V

e0

SILICON

14.8

BB639-E7904XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

38.3 pF

5.26 %

30 V

e3

SILICON

9.8

BB202,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

6 V

85 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

8.59 %

e3

30

260

SILICON

2.5

BB639C

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

R-PDSO-G2

1

Not Qualified

39 pF

7.01 %

35 V

SILICON

9.5

MA45439-287T

TE Connectivity

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

1500

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

TIN LEAD

R-PDSO-G3

Not Qualified

8.2 pF

10 %

30 V

e0

SILICON

4.5

MA46H120-W

M/a-com Technology Solutions

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

3000

UNSPECIFIED

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

R-XDSO-N2

Not Qualified

.1 W

1.1 pF

20 V

GALLIUM ARSENIDE

SMV1206-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-F2

Not Qualified

.25 W

11.6 pF

8.62 %

22 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.45

SMV1235-004LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

750

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

S BAND

2

SMALL OUTLINE

Varactors

15 V

MATTE TIN

R-PDSO-G3

1

Not Qualified

.25 W

11.5 pF

LOW NOISE

10 %

15 V

e3

260

SILICON

1.6

BB148

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

39.3 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

e3

SILICON

14.5

BBY53-03WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

6 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

5.3 pF

6 V

e3

260

SILICON

1.8

SMV1213-004LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

2

SMALL OUTLINE

Varactors

12 V

125 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.25 W

22 pF

LOW NOISE

12 V

e3

40

260

SILICON

2

BB149A,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

Not Qualified

19.74 pF

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

7.7 %

30 V

e3

SILICON

8.45

BB55502VH7912XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-F2

18.7 pF

LOW INDUCTANCE

6.67 %

30 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6

SMV1231-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

1500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

SMALL OUTLINE

Varactors

15 V

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

1.575 pF

LOW NOISE

9.21 %

15 V

e3

40

260

SILICON

1.5

SMV1405-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

3200

PLASTIC/EPOXY

SINGLE

ABRUPT

S BAND

1

SMALL OUTLINE

Varactors

30 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

.25 W

2.1 pF

LOW NOISE

30 V

e3

40

260

SILICON

4.1

BB545E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

20 pF

LOW INDUCTANCE

7.5 %

e3

SILICON

6.3

SMV1213-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

12 V

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

22 pF

12 V

e3

40

260

SILICON

2

SMV1236-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

700

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

SMALL OUTLINE

Varactors

15 V

TIN

R-PDSO-F2

1

Not Qualified

.25 W

17 pF

LOW NOISE

8.82 %

15 V

e3

260

SILICON

1.6

BBY40,235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

29 pF

TO-236AB

10.34 %

30 V

e3

30

260

SILICON

5

SMV1248-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

700

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

17 pF

15 V

e3

40

260

SILICON

10.8

SMV1255-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

350

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

64 pF

15 V

e3

40

260

SILICON

11

SMV2020-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

22 V

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

1.37 pF

LOW NOISE

12.09 %

22 V

e3

40

260

SILICON

2.8

SMV2023-011LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

22 V

Matte Tin (Sn)

R-PDSO-G2

1

Not Qualified

.25 W

4.9 pF

LOW NOISE

10.2 %

22 V

e3

40

260

SILICON

4.2

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.