TE Connectivity - MA45439-287T

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 1.8 pF; Minimum Quality Factor: 3000;

The Onsemi MV2115 is a single varactor diode with a min quality factor of 100, ideal for RF applications. With a nominal capacitance of 100 pF and a breakdown voltage of 30 V, it offers precise tuning capabilities in cylindrical package style. Its silicon element material and through-hole terminal form make it suitable for high-frequency circuits requiring variable capacitance control.

MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.

SVC251SPA by Onsemi is a single hyperabrupt varactor diode with 23pF nominal capacitance, 12V breakdown voltage, and 1.7 min capacitance ratio. It is used in RF applications for frequency tuning due to its silicon element material and through-hole terminal form.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

SVC236 by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 70 and Variable Capacitance Diode Classification: ABRUPT. It operates in the VERY HIGH FREQUENCY band, has a Max Reverse Current of 0.05 uA, and is suitable for applications requiring high-frequency signal modulation.

SVC201SPA by Onsemi is a single hyperabrupt varactor diode with 28.19 pF nominal capacitance and 16 V breakdown voltage. It is used in applications requiring variable capacitance diodes, featuring a through-hole terminal form and silicon diode element material.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV2103LT1 by Onsemi is a varactor diode with a min quality factor of 400, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 10 pF and a min breakdown voltage of 30 V, making it ideal for RF tuning circuits in communication systems. The diode's small outline package with gull wing terminals and tin lead finish allows for easy surface mount assembly.

SMV1405-079LF by Skyworks Solutions is a varactor diode with 3200 min. quality factor, 2.1 pF nominal capacitance, and 30 V breakdown voltage. Ideal for S band applications due to its abrupt variable capacitance diode classification and small outline package style for surface mount usage.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5453 by Onsemi is a varactor diode with a min quality factor of 200, max reverse current of 0.02 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

MV2101RLRA by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF tuning applications due to its variable capacitance property and can operate at temperatures up to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 12 V; Minimum Quality Factor: 33;

TIV25 by Texas Instruments is a single varactor diode with 28pF capacitance, 30V breakdown voltage, and 80 min quality factor. Ideal for very high frequency applications due to its isolated case connection, 0.25W power dissipation, and silicon diode element material.

BBY31TRL13 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a 3-terminal gull-wing configuration in a small rectangular package, made of plastic/epoxy. Ideal for RF tuning and voltage-controlled oscillators, it ensures efficient performance in compact designs.