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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	JESD-30 Code	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	Diode Element Material	Minimum Diode Capacitance Ratio
BBY34D	STMicroelectronics	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	400	UNSPECIFIED	SINGLE	HYPERABRUPT			1		MICROWAVE			175 Cel		O-XEMW-N2		Not Qualified				22 V	SILICON	2.7
BB215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LELF-R2	ISOLATED	Not Qualified	16.5 pF	3% MATCHED SETS AVAILABLE			SILICON	7.6
BB249TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	8
BB240TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	14
BB249	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE		30 V	SILICON	8
BB249TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	8
BB241TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	21
BB240TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	14
BB241TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	21
BB215TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	7.6
BB219	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LELF-R2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES		30 V	SILICON	12
BB215TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		ULTRA HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	7.6
BB219TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	12
BB240	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LELF-R2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES		32 V	SILICON	14
BB219TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY		1		LONG FORM					O-LELF-R2	ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			SILICON	12
BB241	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel		O-LELF-R2	ISOLATED	Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES		32 V	SILICON	21
BBY34C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	400	CERAMIC, METAL-SEALED COFIRED	SINGLE	HYPERABRUPT			1		MICROWAVE					O-CEMW-N2		Not Qualified	3.4 pF			22 V	SILICON	4.3
BBY33BB2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	4000	UNSPECIFIED	SINGLE	ABRUPT			1		MICROWAVE	Varactors	25 V			O-XEMW-N2		Not Qualified	1.2 pF			25 V	SILICON	2.5
BBY33DA2	Infineon Technologies	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	3500	UNSPECIFIED	SINGLE	ABRUPT			1		MICROWAVE	Varactors	30 V			O-XEMW-N2		Not Qualified	2 pF			30 V	SILICON	3
S3028	Toshiba	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND		UNSPECIFIED	SINGLE	ABRUPT	MILLIMETER WAVE BAND		1		MICROWAVE	Varactors	50 V	150 Cel	-65 Cel	O-XEMW-N2		Not Qualified	1.95 pF		12.82 %	50 V	SILICON
HVK89	Renesas Electronics	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND		GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM	Varactors	34 V			O-LELF-R2	ISOLATED	Not Qualified	11 pF			32 V	SILICON
AT9020	Broadcom	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	500	CERAMIC, METAL-SEALED COFIRED	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		MICROWAVE	Varactors	90 V			O-CEMW-N2		Not Qualified	39 pF		10 %	90 V	SILICON	9.5
AT9010	Broadcom	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	750	CERAMIC, METAL-SEALED COFIRED	SINGLE	ABRUPT	L BAND		1		MICROWAVE	Varactors	90 V			O-CEMW-N2		Not Qualified	5.6 pF		10 %	90 V	SILICON	8.8
AT9000	Broadcom	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	1000	CERAMIC, METAL-SEALED COFIRED	SINGLE	ABRUPT	S BAND		1		MICROWAVE	Varactors	90 V			O-CEMW-N2		Not Qualified	.8 pF		10 %	90 V	SILICON	5.6

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.