NXP Semiconductors Varactor Diodes 486
| Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Minimum Quality Factor | Package Body Material | Config | Variable Capacitance Diode Classification | Frequency Band | Maximum Output Current | Maximum Forward Voltage (VF) | Maximum Reverse Recovery Time | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Repetitive Peak Reverse Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Maximum Power Dissipation | Nominal Diode Capacitance | Additional Features | JEDEC-95 Code | Diode Cap Tolerance | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Minimum Diode Capacitance Ratio | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
VARIABLE CAPACITANCE DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
1 |
SMALL OUTLINE |
Varactors |
32 V |
125 Cel |
-55 Cel |
TIN |
R-PDSO-F2 |
Not Qualified |
38.5 pF |
2% MATCHED SETS OF 10 DIODES ARE AVAILABLE |
32 V |
e3 |
SILICON |
13.5 |
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|
|
NXP Semiconductors |
VARIABLE CAPACITANCE DIODE |
YES |
Varactors |
35 V |
TIN |
18.22 pF |
e3 |
||||||||||||||||||||||||||||||||||
|
|
NXP Semiconductors |
VARIABLE CAPACITANCE DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
ULTRA HIGH FREQUENCY |
.01 uA |
2 |
28 V |
SMALL OUTLINE |
Varactors |
30 V |
85 Cel |
MATTE TIN |
R-PDSO-G4 |
CATHODE |
Not Qualified |
16.5 pF |
30 V |
e3 |
SILICON |
|||||||||||||||||
|
|
NXP Semiconductors |
VARIABLE CAPACITANCE DIODE |
DUAL |
GULL WING |
4 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SEPARATE, 2 ELEMENTS |
ULTRA HIGH FREQUENCY |
.01 uA |
2 |
28 V |
SMALL OUTLINE |
Varactors |
30 V |
125 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G4 |
CATHODE |
Not Qualified |
16.5 pF |
30 V |
e3 |
SILICON |
||||||||||||||||
|
|
NXP Semiconductors |
VARIABLE CAPACITANCE DIODE |
BOTTOM |
NO LEAD |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
VERY HIGH FREQUENCY |
1 |
CHIP CARRIER |
Varactors |
32 V |
125 Cel |
-55 Cel |
TIN |
R-PBCC-N2 |
Not Qualified |
38.5 pF |
10 % |
e3 |
SILICON |
13.5 |
||||||||||||||||||
|
|
NXP Semiconductors |
VARIABLE CAPACITANCE DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
SINGLE |
ULTRA HIGH FREQUENCY |
1 |
SMALL OUTLINE |
Varactors |
35 V |
125 Cel |
-55 Cel |
TIN |
R-PDSO-F2 |
Not Qualified |
19.74 pF |
2% MATCHED SETS OF 10 DIODES ARE AVAILABLE |
30 V |
e3 |
SILICON |
8.45 |
Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.
Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.
Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.
Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.