NXP Semiconductors Varactor Diodes 486

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB135,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified	19.25 pF				30 V	e3	30	260	SILICON	8.9
BBY40,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified	26 pF				30 V	e3	30	260	SILICON	5
BB131,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES										Varactors	30 V			TIN		1			12 pF					e3	30	260
BB171X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE		32 V	125 Cel	-55 Cel		R-PDSO-G2	1			57 pF			8.77 %	32 V			260	SILICON	20.6	IEC-60134
BB175X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES										Varactors	32 V			TIN		1								e3	30	260
BB202,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	6 V	85 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified				8.59 %		e3	30	260	SILICON	2.5
BB148	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified	39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	14.5
BB149A,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified	19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		7.7 %	30 V	e3			SILICON	8.45
BB174X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES										Varactors	30 V			TIN		1								e3	30	260
BBY40,235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1			29 pF		TO-236AB	10.34 %	30 V	e3	30	260	SILICON	5
BB201,215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified	95 pF		TO-236AB	6.81 %		e3	30	260	SILICON	3.1
BB208-02,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified	10.1 pF					e3	30	260	SILICON	3.7
BB181LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel	TIN	R-PBCC-N2			Not Qualified	12.5 pF			36 %	32 V	e3			SILICON	12
BB156/A2,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES										Varactors	10 V								16 pF
BB901235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3			Not Qualified									SILICON	12
BB909A116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BB909A-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE			32 V				SILICON	12
934067719115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE
BB156/A2,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES										Varactors	10 V			Tin (Sn)		1			16 pF					e3
BB156	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified	16 pF			10 %		e3	30	260	SILICON	2.7
BB148,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified	39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	14.5
BBY39235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		ULTRA HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3			Not Qualified	16.5 pF								SILICON	8
BB809-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified		3% MATCHED SETS ARE AVAILABLE			30 V				SILICON	8
934067721115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE
BB201T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3			Not Qualified	95 pF		TO-236AB	6.81 %		e3			SILICON	3.1
BB909B133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BB909B153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BBY39TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE						R-PDSO-G3			Not Qualified									SILICON	8
934055065115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified	19.1 pF					e3			SILICON	1.45
934067725115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE																		TIN		1								e3	30	260
BB204G-AMMOPAK	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL						O-PBCY-T3			Not Qualified									SILICON	2.5
BB909A143	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified		2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BB153T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified	38.5 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		10 %	32 V	e3			SILICON	13.5
934067722115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE
933505310235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified						e3	30	260	SILICON	5
BB164T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified	69 pF	2% MATCHED SETS OF 15 DIODES ARE AVAILABLE				e3			SILICON	19.5
BBY40-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified	26 pF				30 V	e3	30	260	SILICON	5
BB142,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	NOT APPLICABLE		Not Qualified	4.6 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BB149/A2,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES										Varactors	30 V								2.1 pF
934056828315	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE						R-PDSO-F2			Not Qualified	6.8 pF			5.88 %					SILICON	2.2
934057928215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE
BB215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LELF-R2		ISOLATED	Not Qualified	16.5 pF	3% MATCHED SETS AVAILABLE							SILICON	7.6
934055438135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	Tin (Sn)	R-PDSO-F2	1		Not Qualified	12.5 pF			36 %		e3	30	260	SILICON	12
BB156,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified	16 pF			10 %		e3	30	260	SILICON	2.7
BB132T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified	67.5 pF	1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE		11.1 %	30 V	e3			SILICON	24
934018020135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified	42 pF			9.52 %		e3			SILICON	14
BB804R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY		2		SMALL OUTLINE						R-PDSO-G3			Not Qualified	42.75 pF			1.75 %	18 V				SILICON	1.65
BB909A	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified	23 pF	MATCHED TO 2.5%	DO-34						SILICON	12

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.