NXP Semiconductors - 934067719115

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934067719115 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934067719115
Description VARIABLE CAPACITANCE DIODE;
Datasheet 934067719115 Datasheet
In Stock3,156
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BB148/T3 by NXP Semiconductors

BB148/T3

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VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BBY62T/R by NXP Semiconductors

BBY62T/R

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VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
MBV109T1 by Onsemi

MBV109T1

Onsemi

MBV109T1 by Onsemi is a varactor diode with a min quality factor of 200, operating in the very high frequency band. It has a nominal capacitance of 29 pF and a max power dissipation of 0.28 W. Ideal for applications requiring variable capacitance, such as RF tuning circuits in small outline packages.
1SV325(TPH3,F) by Toshiba

1SV325(TPH3,F)

Toshiba

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Package Style (Meter): SMALL OUTLINE; Variable Capacitance Diode Classification: ABRUPT;
BBY6602VH6327XTSA1 by Infineon Technologies

BBY6602VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BB208-02,135 by NXP Semiconductors

BB208-02,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV2101LT1G by Onsemi

MMBV2101LT1G

Onsemi

MMBV2101LT1G by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. Ideal for high frequency to ultra-high frequency applications due to its abrupt variable capacitance diode classification. It comes in a small outline package with gull wing terminals for surface mount assembly.
BB119133 by NXP Semiconductors

BB119133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N5706 by Onsemi

1N5706

Onsemi

1N5706 by Onsemi is a varactor diode with 47pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.
BB174LXX by NXP Semiconductors

BB174LXX

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 19.75 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;
MGV125-08 by M/a-com Technology Solutions

MGV125-08

M/a-com Technology Solutions

MGV125-08 by M/a-com Technology Solutions is a SINGLE varactor diode with HYPERABRUPT classification, ideal for KA BAND applications. Featuring a Min Quality Factor of 4000, 0.3 pF Nominal Diode Capacitance, and 22 V Min Breakdown Voltage, it offers high performance in compact SQUARE package for surface mount applications.
934056505115 by NXP Semiconductors

934056505115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LV2209RLRA by Onsemi

LV2209RLRA

Onsemi

LV2209RLRA by Onsemi is a Varactor Diode with 33pF capacitance, 25V breakdown voltage, and 200 min quality factor. Ideal for RF applications due to its variable capacitance feature and can operate at temperatures up to 150 °C. Its through-hole design and tin-lead finish make it suitable for various electronic circuits.
612 by Nte Electronics

612

Nte Electronics

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB182,315 by NXP Semiconductors

BB182,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V;
SVD202 by Onsemi

SVD202

Onsemi

The Onsemi SVD202 is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a max operating temperature of 150 °C, it offers a nominal capacitance of 11 pF and a breakdown voltage of 27 V. This surface-mount diode in microwave package style is designed for high-frequency circuits requiring variable capacitance control.
MMVL2101T1 by Onsemi

MMVL2101T1

Onsemi

MMVL2101T1 by Onsemi is a varactor diode with 6.8pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.
BB200 by NXP Semiconductors

BB200

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB241 by NXP Semiconductors

BB241

NXP Semiconductors

BB241 by NXP Semiconductors is a single, surface-mount varactor diode designed for very high frequency applications. It features a max reverse current of 0.01 µA and operates up to 100 °C with a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, it offers excellent capacitance variation.
1SV228(TPH3,F) by Toshiba

1SV228(TPH3,F)

Toshiba

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.