Texas Instruments - MDX587D

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Toshiba 1SV290 is a varactor diode with a max reverse current of 0.01 uA and a min breakdown voltage of 30 V. Its nominal capacitance is 45.25 pF, making it ideal for applications requiring variable capacitance such as in RF tuning circuits or frequency modulators. The diode's small outline package and surface mount capability make it suitable for compact electronic devices operating at temperatures up to 125°C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BBY5502VH6327XTSA1 by Infineon is a single hyperabrupt varactor diode with 18.6pF capacitance, 16V breakdown voltage, and -55 to 150°C operating range. Ideal for applications requiring variable capacitance in small outline packages.

VARIABLE CAPACITANCE DIODE; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

BB911-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Repetitive Peak Reverse Voltage: 35 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BB208-03,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 3.7 and a max reverse voltage of 10V. It operates b/w -55°C to 125°C, has a nominal capacitance of 10.1pF, and is designed for applications requiring variable capacitance diodes in small outline packages.

MV104G by Onsemi is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and max power dissipation of 0.28 W. Ideal for applications requiring precise voltage control in RF circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MV2105RLRE by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems. Operating temperature up to 150 °C makes it suitable for high-temperature environments.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Motorola's MV1401 is a single varactor diode with hyperabrupt capacitance classification. It features a min quality factor of 200, max reverse current of 0.1 uA, and nominal capacitance of 550 pF. Ideal for applications requiring variable capacitance control in electronic circuits.

BB219 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.