Onsemi Varactor Diodes 319

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
1N5442	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	8.2 pF		DO-7	20 %	30 V	e0			SILICON	2.5
MV2109RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
1N5440	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE			.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	4.7 pF			20 %	30 V	e0			SILICON	2.4
MMBV2109LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1		Not Qualified	.225 W	33 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
MMBV409LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	29 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10.34 %	20 V	e0	30	235	SILICON	1.5
LV2205RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0			SILICON	2.5
1N5475	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	225	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	30 V	e0			SILICON	2.9
SVC321D	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	CYLINDRICAL		16 V	100 Cel			O-PBCY-T2								3 %	16 V				SILICON	15.5
MMVL2105T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN	R-PDSO-G2	1		Not Qualified	.2 W	15 pF	HIGH RELIABILITY		10 %	30 V	e3			SILICON	2.5
1N5686	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	45 V	e0			SILICON	3.2
SVC354R	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.26 %	16 V				SILICON	17.5
MV2109RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	30 V	e0			SILICON	2.5
1N4800	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	15 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	100 pF		DO-7	20 %	17 V	e0			SILICON	2.24
MV2109RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V			TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0		235	SILICON	2.5
MMVL3102T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2	1		Not Qualified	.2 W	22 pF	HIGH RELIABILITY		11.11 %	30 V	e3	30	260	SILICON	4.5
MMBV2101LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0	30	235	SILICON	2.5
1N5476	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	200	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	30 V	e0			SILICON	2.9
1N4795	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	20 V	LONG FORM	Varactors	55 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	39 pF		DO-7	20 %	22 V	e0			SILICON	2.34
MV104RLRAG	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT			2		CYLINDRICAL	Varactors	32 V			TIN SILVER COPPER	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e1		260	SILICON	2.5
SVC389	Onsemi	VARIABLE CAPACITANCE DIODE				YES		200									Varactors	16 V									50 pF
SVD301	Onsemi	VARIABLE CAPACITANCE DIODE	UNSPECIFIED	FLAT	2	YES	UNSPECIFIED		UNSPECIFIED	SINGLE	HYPERABRUPT	X BAND		1		MICROWAVE	Varactors	30 V				X-XXMW-F2			Not Qualified	.2 W	2.6 pF				27 V				GALLIUM ARSENIDE	17
SVC211	Onsemi	VARIABLE CAPACITANCE DIODE				NO		100									Varactors	30 V									42 pF
1N5691	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	400	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	47 pF		DO-7	20 %	45 V	e0			SILICON	3.3
MMBV432LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	ABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	14 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	45.55 pF	HIGH Q, 1% MATCHING GUARANTEED	TO-236AB	5.6 %	14 V	e0	30	235	SILICON	1.5
SVC208	Onsemi	VARIABLE CAPACITANCE DIODE				YES		60									Varactors	16 V									30 pF
MV2101RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
1N5466	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	30 V	e0			SILICON	2.9
MMBV2107LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1		Not Qualified	.225 W	22 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
SVC321SP	Onsemi	VARIABLE CAPACITANCE DIODE				NO		200									Varactors	8 V									459 pF
1N5468	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	30 V	e0			SILICON	2.9
SVD302	Onsemi	VARIABLE CAPACITANCE DIODE	UNSPECIFIED	FLAT	2	YES	UNSPECIFIED		UNSPECIFIED	SINGLE	HYPERABRUPT	X BAND		1		MICROWAVE	Varactors	30 V	150 Cel			X-XXMW-F2			Not Qualified	.5 W	15 pF				27 V				GALLIUM ARSENIDE	17

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.