Onsemi Varactor Diodes 319

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
MMVL809T1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G2	1		Not Qualified	.2 W	5.3 pF	HIGH RELIABILITY		15.09 %	20 V	e3	30	260	SILICON	1.8
SVC355	Onsemi	VARIABLE CAPACITANCE DIODE				NO											Varactors	16 V									27 pF
SVC342	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	3	NO	ROUND	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL	Varactors	16 V				O-PBCY-W3			Not Qualified		503 pF		TO-92		16 V				SILICON	19.5
1N5704	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	65 V	e0			SILICON	3.2
SVC270-TL-E	Onsemi	VARIABLE CAPACITANCE DIODE																			TIN BISMUTH		1									e6	30	260	SILICON
1N5685	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	550	GLASS	SINGLE	ABRUPT		.00000002 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	15 pF		DO-7	20 %	45 V	e0			SILICON	3.2
1N4802	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	100 V	LONG FORM	Varactors	100 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	8.2 pF		DO-7	20 %	110 V	e0			SILICON	2.42
SVC325	Onsemi	VARIABLE CAPACITANCE DIODE				YES		200									Varactors	16 V									52 pF
SVC354S	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMPLEX				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.31 %	16 V				SILICON	17.5
SVC353S	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 3 ELEMENTS				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.31 %	16 V				SILICON	17.5
1N5710	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	100 pF		DO-7	20 %	65 V	e0			SILICON	3.2
1N5448	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	22 pF		DO-7	20 %	30 V	e0			SILICON	2.6
1N5455	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	175	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	82 pF		DO-7	20 %	30 V	e0			SILICON	2.7
MV2105G	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		CYLINDRICAL	Varactors	30 V	150 Cel		TIN SILVER COPPER	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH Q, HIGH RELIABILITY	TO-92	10 %	30 V	e1		260	SILICON	2.5
SVC321SPAD	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	IN-LINE	Varactors	16 V	100 Cel			R-PSIP-T2								3 %	16 V				SILICON	15.5
MC209RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T3			Not Qualified	.2 W	29 pF		TO-92	10.34 %	30 V	e0			SILICON	5
MMBV2101LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	450	PLASTIC/EPOXY	SINGLE	ABRUPT	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G3	1		Not Qualified	.225 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e3	30	260	SILICON	2.5
SVC321SPA	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE				1		IN-LINE	Varactors	16 V	100 Cel			R-PSIP-T2			Not Qualified		388.1 pF				16 V				SILICON	15.5
ESVD301	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		X BAND		1		CHIP CARRIER	Varactors	30 V	150 Cel			R-XBCC-N2			Not Qualified	.2 W	2.6 pF								SILICON	17
1N5703	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	27 pF		DO-7	20 %	65 V	e0			SILICON	3.2
MV104RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0			SILICON	2.5
MV209RL	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.2 W	29 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10.34 %	30 V	e0			SILICON	5
1N5707	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	225	GLASS	SINGLE	ABRUPT		.00000002 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	56 pF		DO-7	20 %	65 V	e0			SILICON	3.2
1N5696	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	450	GLASS	SINGLE	ABRUPT		.02 uA	1	60 V	LONG FORM	Varactors	60 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	6.8 pF		DO-7	20 %	65 V	e0			SILICON	2.7
MV104RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	EUROPEAN PART NUMBER	TO-92	6.33 %	32 V	e0			SILICON	2.5
LV2209RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	25 V	e0			SILICON	2.5
SVC212Y	Onsemi	VARIABLE CAPACITANCE DIODE				YES											Varactors	16 V									47 pF
MV2109RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
SVC353T	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 3 ELEMENTS				3		SMALL OUTLINE	Varactors	16 V				R-PDSO-G6			Not Qualified					3.35 %	16 V				SILICON	17.5
SVC321SPAB	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	IN-LINE	Varactors	16 V	100 Cel			R-PSIP-T2								3 %	16 V				SILICON	15.5
MV209RLRA	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		CYLINDRICAL					TIN LEAD	O-PBCY-T2			Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0		235	SILICON	5
1N5681	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.02 uA	1	40 V	LONG FORM	Varactors	40 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	6.8 pF		DO-7	20 %	45 V	e0			SILICON	3.1
MMBV409LT1G	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN	R-PDSO-G3	1		Not Qualified	.225 W	29 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10.34 %	20 V	e3	30	260	SILICON	1.5
1N4806	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.000000005 uA	1	90 V	LONG FORM	Varactors	90 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	18 pF		DO-7	20 %	99 V	e0			SILICON	2.36
MMBV609LT1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	VERY HIGH FREQUENCY		2		SMALL OUTLINE	Varactors	20 V			Tin/Lead (Sn/Pb)	R-PDSO-G3	1		Not Qualified	.225 W	29 pF	HIGH Q	TO-236AB	10.34 %	20 V	e0	30	235	SILICON	1.8
MMVL809T1	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	20 V			TIN LEAD	R-PDSO-G2	1		Not Qualified	.2 W	5.3 pF	HIGH RELIABILITY		15.09 %	20 V	e0		235	SILICON	1.8
1N5446	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT		.02 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	18 pF		DO-7	20 %	30 V	e0			SILICON	2.6
LV2209RL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	33 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0			SILICON	2.5
SVC321SPAC	Onsemi	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			.1 uA	1	9 V	IN-LINE	Varactors	16 V	100 Cel			R-PSIP-T2								3 %	16 V				SILICON	15.5
MV2101RLRP	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	450	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	6.8 pF	HIGH RELIABILITY	TO-92	10 %	30 V	e0			SILICON	2.5
MMBV2101L	Onsemi	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	450	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	30 V			TIN LEAD	R-PDSO-G3			Not Qualified	.225 W	6.8 pF	HIGH Q, HIGH RELIABILITY	TO-236AB	10 %	30 V	e0			SILICON	2.5
SVC202SPA	Onsemi	VARIABLE CAPACITANCE DIODE				NO		190									Varactors	16 V									37 pF
MV104RLRM	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	100	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T3			Not Qualified	.28 W	39.5 pF	1% MATCHING GUARANTEED	TO-92	6.33 %	32 V	e0			SILICON	2.5
1N4786	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	25 V	LONG FORM	Varactors	25 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	6.8 pF		DO-7	20 %	28 V	e0			SILICON	2.4
1N4813	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	15	GLASS	SINGLE	ABRUPT		.005 uA	1	30 V	LONG FORM	Varactors	15 V	150 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.5 W	68 pF		DO-7	20 %	33 V	e0			SILICON	2.3
1N5461	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	600	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	6.8 pF		DO-7	20 %	30 V	e0			SILICON	2.7
LV2205ZL1	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	400	PLASTIC/EPOXY	SINGLE				1		CYLINDRICAL			150 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.28 W	15 pF	HIGH RELIABILITY, EUROPEAN PART NUMBER	TO-92	10 %	25 V	e0			SILICON	2.5
MV209RLRE	Onsemi	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		CYLINDRICAL			125 Cel		TIN LEAD	O-PBCY-T2			Not Qualified	.2 W	29 pF	HIGH RELIABILITY	TO-92	10.34 %	30 V	e0			SILICON	5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.