Onsemi - SVC355

1N5700 by Onsemi is a varactor diode with 15pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PC123 by Api Technologies is a Varactor Diode with a Max Reverse Current of 0.5 uA, Nominal Capacitance of 15 pF, and Max Operating Temperature of 175°C. It is ideal for applications requiring precise voltage control in RF circuits due to its abrupt Variable Capacitance Diode Classification.

VARIABLE CAPACITANCE DIODE; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The NXP Semiconductors BB148 is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 39.3 pF. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. With a min operating temperature of -55 °C and max of 125 °C, it offers reliable performance across a wide temperature range.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N5443 by Onsemi is a varactor diode with 10pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 400 and low reverse current of 0.00000002uA.

1N5708 by Onsemi is a varactor diode with 175 min quality factor, 68 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp range: -65 to 175 °C.

MV2105RL1 by Onsemi is a Varactor Diode with 15pF capacitance, 30V breakdown voltage, and 400 min quality factor. It is ideal for RF tuning applications due to its variable capacitance property and can operate at temperatures up to 150 °C.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 27 pF;

BBY62TRL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 17.5 pF, a min capacitance ratio of 9.7, and comes in a compact surface mount package with 4 terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small electronic devices.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 5; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

1N4797 by Onsemi is a varactor diode with 56pF nominal capacitance, abrupt variable capacitance classification, and 15V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor and low reverse current of 0.005uA.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Varactors;

The Onsemi SVC346 is a Varactor Diode with 2 elements, offering a min Quality Factor of 200 and a Nominal Diode Capacitance of 64 pF. Commonly used in RF applications, it features a Min Breakdown Voltage of 33 V and is designed for variable capacitance needs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 30; Nominal Diode Capacitance: .45 pF;