Texas Instruments - MDX584C

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 15 pF; Maximum Repetitive Peak Reverse Voltage: 15 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 133; Maximum Repetitive Peak Reverse Voltage: 12 V; Nominal Diode Capacitance: .9 pF;

1N5453 by Onsemi is a varactor diode with a min quality factor of 200, max reverse current of 0.02 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

BB204B-AMMOPAK by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 2.5 and comes in a cylindrical plastic/epoxy package, ideal for RF tuning applications. With its through-hole design and silicon material, it ensures reliable performance in various electronic circuits.

The NXP 934042930115 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact design ensures efficient surface mount integration.

VARIABLE CAPACITANCE DIODE;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 5; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;

VARIABLE CAPACITANCE DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi MV1630 is a single varactor diode with 18pF nominal capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

The Onsemi MV209 is a single hyperabrupt varactor diode with a nominal capacitance of 29 pF and a min breakdown voltage of 30 V. It is designed for very high frequency applications, offering a quality factor of 200 and max power dissipation of 0.2 W in a cylindrical package with tin/lead terminals.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Moisture Sensitivity Level (MSL): 1; Nominal Diode Capacitance: 16 pF; Terminal Finish: Tin (Sn);