2 Zener Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Working Test Current	Config	Maximum Voltage Temperature Coefficient	Nominal Reference Voltage	Maximum Forward Voltage (VF)	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Voltage Tolerance	Maximum Knee Impedance	Maximum Operating Temperature	Maximum Dynamic Impedance	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Polarity	Case Connection	Qualification	Maximum Power Dissipation	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Reference Standard
1SMB5914B-13	Diodes Incorporated	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	104.2 mA	SINGLE		3.6 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	5 %		150 Cel	9 ohm	-65 Cel	MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL			3 W			e3	30	260	SILICON
BZG03C240-TR	Vishay Intertechnology	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE		240 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	5.79 %		150 Cel	850 ohm		MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1.25 W	HIGH RELIABILITY	DO-214AC	e3	30	260	SILICON
BZG03C240TR	Vishay Telefunken	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY						ZENER				SMALL OUTLINE							MATTE TIN	R-PDSO-C2	1			Not Qualified			DO-214	e3			SILICON
BZG03-C240T/R	NXP Semiconductors	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE	312 mV/Cel	240 V		ZENER	1 uA	1		SMALL OUTLINE		5.79 %		175 Cel		-65 Cel		R-PDSO-C2		UNIDIRECTIONAL		Not Qualified	1.25 W	LOW LEAKAGE CURRENT	DO-214AC				SILICON
BZT52C6V2T-7	Diodes Incorporated	ZENER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	3.7 mV/Cel	6.2 V		ZENER	3 uA	1	4 V	SMALL OUTLINE	Voltage Reference Diodes	6.45 %	150 ohm	150 Cel	10 ohm	-65 Cel	MATTE TIN	R-PDSO-F2	1	UNIDIRECTIONAL		Not Qualified	.3 W			e3	30	260	SILICON
BZV55-C7V5,115	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	5.3 mV/Cel	7.45 V		ZENER	1 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	15 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZV55C12L1	Taiwan Semiconductor	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		12 V		ZENER		1		LONG FORM		5 %		175 Cel		-65 Cel	MATTE TIN OVER NICKEL	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	HIGH RELIABILITY	DO-213AC	e3			SILICON
BZX84J-B18,115	NXP Semiconductors	ZENER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		18 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	2 %		150 Cel	20 ohm		TIN	R-PDSO-F2	1	UNIDIRECTIONAL		Not Qualified	.55 W			e3	30	260	SILICON
BZX85C5V1-TAP	Vishay Intertechnology	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	45 mA	SINGLE		5.1 V		ZENER		1		LONG FORM	Voltage Reference Diodes	5.88 %		175 Cel	10 ohm		Tin/Silver (Sn96.5Ag3.5)	O-XALF-W2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	1.3 W	LOW NOISE	DO-41	e2	30	260	SILICON
JAN1N4370AUR-1	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	20 mA	SINGLE	-2.04 mV/Cel	2.4 V		ZENER	100 uA	1	1 V	LONG FORM		5 %		175 Cel	30 ohm	-65 Cel	Tin/Lead (Sn/Pb)	O-LELF-R2		UNIDIRECTIONAL		Qualified	.5 W	METALLURGICALLY BONDED	DO-213AA	e0			SILICON	MIL-19500
JANTXV1N4956US	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	150 mA	SINGLE		8.2 V		ZENER		1		LONG FORM		5 %					TIN LEAD	O-LELF-R2		UNIDIRECTIONAL	ISOLATED	Qualified	5 W			e0			SILICON	MIL-19500/356H
JANTXV1N6324US	Microchip Technology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	20 mA	SINGLE		10 V		ZENER		1		LONG FORM		5 %		175 Cel		-65 Cel	Tin/Lead (Sn/Pb)	O-GELF-R2		UNIDIRECTIONAL		Qualified	.5 W	HIGH RELIABILITY, METALLURGICALLY BONDED		e0			SILICON	MIL-19500
MM3Z36VT1G	Onsemi	ZENER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	2 mA	SINGLE		36 V	.9 V	ZENER	.05 uA	1	25.2 V	SMALL OUTLINE	Voltage Reference Diodes	5.56 %	500 ohm	150 Cel	90 ohm	-65 Cel	MATTE TIN	R-PDSO-G2	1	UNIDIRECTIONAL		Not Qualified	.3 W			e3	30	260	SILICON
1N4746A	Texas Instruments	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	CERAMIC, GLASS-SEALED	14 mA	SINGLE		18 V		ZENER		1		LONG FORM		5 %						O-GALF-W2		UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W		DO-41				SILICON
1N5243BRL	Onsemi	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	9.5 mA	SINGLE		13 V		ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	13 ohm		Tin (Sn)	O-LALF-W2		UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W		DO-204AH	e3			SILICON
BZG03-C30T/R	NXP Semiconductors	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	25 mA	SINGLE	33 mV/Cel	30 V		ZENER	1 uA	1		SMALL OUTLINE		6.67 %		175 Cel		-65 Cel		R-PDSO-C2		UNIDIRECTIONAL		Not Qualified	1.25 W	LOW LEAKAGE CURRENT	DO-214AC				SILICON
BZG03C16-HM3-08	Vishay Intertechnology	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	25 mA	SINGLE		16 V		ZENER		1		SMALL OUTLINE		5.56 %		150 Cel		-65 Cel	Matte Tin (Sn)	R-PDSO-C2	1	UNIDIRECTIONAL			1.25 W	HIGH RELIABILITY	DO-214AC	e3	10	260	SILICON	AEC-Q101
BZG03C180-M3-08	Vishay Intertechnology	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		180 V		ZENER		1		SMALL OUTLINE		6.41 %		150 Cel		-65 Cel	Matte Tin (Sn)	R-PDSO-C2	1	UNIDIRECTIONAL			1.25 W	HIGH RELIABILITY	DO-214AC	e3	10	260	SILICON
BZG03C30TR	Vishay Telefunken	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY						ZENER				SMALL OUTLINE							MATTE TIN	R-PDSO-C2	1			Not Qualified			DO-214	e3			SILICON
BZG03C30-TR	Vishay Intertechnology	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	25 mA	SINGLE		30 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	6.67 %		150 Cel	15 ohm		MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1.25 W	HIGH RELIABILITY	DO-214AC	e3	30	260	SILICON
BZG05C6V2-TR	Vishay Intertechnology	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	35 mA	SINGLE		6.2 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	6.45 %		150 Cel	4 ohm		MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1.25 W	HIGH RELIABILITY	DO-214AC	e3	30	260	SILICON
BZG05C6V2-TR3	Vishay Intertechnology	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	35 mA	SINGLE		6.2 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	6.45 %		150 Cel	4 ohm		MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1.25 W	HIGH RELIABILITY	DO-214AC	e3	30	260	SILICON
BZG05C6V2TR	Vishay Telefunken	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	35 mA	SINGLE		6.2 V		ZENER		1		SMALL OUTLINE		6.45 %		150 Cel			MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1.25 W	HIGH RELIABILITY	DO-214	e3			SILICON
BZG05C6V2TR3	Vishay Telefunken	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	35 mA	SINGLE		6.2 V		ZENER		1		SMALL OUTLINE		6.45 %					MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1.25 W	HIGH RELIABILITY	DO-214	e3			SILICON
BZT52C6V2S-TP	Micro Commercial Components	ZENER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		6.2 V		ZENER	.003 uA	1		SMALL OUTLINE		6.45 %	150 ohm	150 Cel	10 ohm	-65 Cel	Matte Tin (Sn)	R-PDSO-F2	1	UNIDIRECTIONAL		Not Qualified	.2 W			e3	10	260	SILICON
BZT52H-B10,115	NXP Semiconductors	ZENER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		10 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	2 %		150 Cel	70 ohm		TIN	R-PDSO-F2	1	UNIDIRECTIONAL		Not Qualified	.375 W			e3	30	260	SILICON
BZV55-C6V2,135	NXP Semiconductors	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE	3.7 mV/Cel	6.2 V		ZENER	3 uA	1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	10 ohm	-65 Cel	TIN	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.4 W			e3	30	260	SILICON
BZX384C5V1-HG3-18	Vishay Intertechnology	ZENER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	.4 mV/Cel	5.1 V		ZENER	2 uA	1	2 V	SMALL OUTLINE		5 %		150 Cel		-55 Cel	MATTE TIN	R-PDSO-G2	1	UNIDIRECTIONAL			.2 W			e3	10	260	SILICON	AEC-Q101
BZX55C5V6R0G	Taiwan Semiconductor	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	5 mA	SINGLE		5.6 V		ZENER	.1 uA	1	1 V	LONG FORM		5 %	450 ohm	175 Cel	25 ohm	-55 Cel	MATTE TIN	O-LALF-W2		UNIDIRECTIONAL	ISOLATED		.5 W		DO-35	e3			SILICON
BZX79-B6V8,113	NXP Semiconductors	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	5 mA	SINGLE	4.5 mV/Cel	6.8 V		ZENER	2 uA	1		LONG FORM	Voltage Reference Diodes	2 %		200 Cel	15 ohm	-65 Cel	TIN	O-LALF-W2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W		DO-35	e3	30	260	SILICON	CECC50005-005
BZX85C18-TAP	Vishay Intertechnology	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	15 mA	SINGLE		18 V		ZENER		1		LONG FORM	Voltage Reference Diodes	6.41 %		175 Cel	20 ohm		Tin/Silver (Sn96.5Ag3.5)	O-XALF-W2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	1.3 W	LOW NOISE	DO-41	e2	30	260	SILICON
MMSZ5252B-E3-08	Vishay Intertechnology	ZENER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5.2 mA	SINGLE	20.88 mV/Cel	24 V		ZENER	.1 uA	1	18 V	SMALL OUTLINE	Voltage Reference Diodes	5 %	600 ohm	150 Cel	33 ohm	-55 Cel	MATTE TIN	R-PDSO-G2	1	UNIDIRECTIONAL			.5 W			e3			SILICON
PTZTE2530B	ROHM	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE		32 V		ZENER	10 uA	1		SMALL OUTLINE	Voltage Reference Diodes	6.25 %		150 Cel	18 ohm		TIN SILVER COPPER	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1 W	HIGH SURGE WITHSTAND LEVEL		e1	10	260	SILICON
PTZTE253.0B	ROHM	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	40 mA	SINGLE				ZENER	100 uA	1		SMALL OUTLINE				150 Cel			TIN SILVER COPPER	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1 W			e1	10	260	SILICON
SMAZ18-13-F	Diodes Incorporated	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	25 mA	SINGLE		18 V	1.2 V	ZENER	.5 uA	1	13.7 V	SMALL OUTLINE		5 %	150 ohm	150 Cel	15 ohm	-65 Cel	MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL		Not Qualified	1 W	HIGH SURGE CAPABILITY		e3	30	260	SILICON	UL RECOGNIZED
SZ1SMA5936BT3G	Onsemi	ZENER DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	12.5 mA	SINGLE		30 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	5 %		150 Cel	26 ohm	-65 Cel	MATTE TIN	R-PDSO-C2	1	UNIDIRECTIONAL			.5 W			e3	30	260	SILICON	AEC-Q101
SZ1SMB5943BT3G	Onsemi	ZENER DIODE	DUAL	L BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	6.7 mA	SINGLE		56 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	5 %		150 Cel	86 ohm	-65 Cel	MATTE TIN	R-PDSO-L2	1	UNIDIRECTIONAL			.55 W			e3	30	260	SILICON	AEC-Q101
SZMM5Z6V8T1G	Onsemi	ZENER DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		6.8 V	.9 V	ZENER	2 uA	1	4 V	SMALL OUTLINE	Voltage Reference Diodes	2 %	160 ohm	150 Cel	15 ohm	-65 Cel	MATTE TIN	R-PDSO-F2	1	UNIDIRECTIONAL			.5 W			e3	30	260	SILICON	AEC-Q101
SZMMSZ3V0T1G	Onsemi	ZENER DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		3 V		ZENER		1		SMALL OUTLINE	Voltage Reference Diodes	5 %		150 Cel	95 ohm	-55 Cel	MATTE TIN	R-PDSO-G2	1	UNIDIRECTIONAL			.5 W			e3	30	260	SILICON	AEC-Q101
TZMB5V1GS08	Vishay Telefunken	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		5.1 V		ZENER		1		LONG FORM		2 %					TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE	DO-213AA	e2			SILICON
TZMB5V1-GS08	Vishay Intertechnology	ZENER DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	5 mA	SINGLE		5.1 V		ZENER		1		LONG FORM	Voltage Reference Diodes	2 %		175 Cel	60 ohm		TIN SILVER	O-LELF-R2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	.5 W	LOW NOISE	DO-213AA	e2	10	260	SILICON
1N4735A,113	NXP Semiconductors	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	41 mA	SINGLE		6.2 V		ZENER	10 uA	1		LONG FORM	Voltage Reference Diodes	5 %	700 ohm	200 Cel	2 ohm	-65 Cel	TIN	O-LALF-W2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W		DO-41	e3	30	260	SILICON
1N4739AT/R	NXP Semiconductors	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	28 mA	SINGLE		9.1 V		ZENER	10 uA	1		LONG FORM	Voltage Reference Diodes	5 %	700 ohm	200 Cel	5 ohm	-65 Cel	MATTE TIN	O-LALF-W2		UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W		DO-41	e3			SILICON
1N4739ATR	Onsemi	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	28 mA	SINGLE		9.1 V		ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		200 Cel	5 ohm	-65 Cel	MATTE TIN	O-LALF-W2		UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W		DO-41	e3			SILICON
1N4739A.TR	National Semiconductor	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	28 mA	SINGLE		9.1 V		ZENER	10 uA	1		LONG FORM		5 %	700 ohm	200 Cel				O-LALF-W2		UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W		DO-41				SILICON
1N4739A-TR	Vishay Intertechnology	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	28 mA	SINGLE		9.1 V		ZENER		1		LONG FORM	Voltage Reference Diodes	5 %		175 Cel			Tin/Silver (Sn96.5Ag3.5)	O-XALF-W2		UNIDIRECTIONAL	ISOLATED	Not Qualified	1.3 W		DO-41	e2	30	260	SILICON
1N4739A-T/R	Frontier Electronics	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	PLASTIC/EPOXY	28 mA	SINGLE		9.1 V		ZENER	10 uA	1		LONG FORM		5 %	700 ohm	175 Cel		-65 Cel		O-PALF-W2		UNIDIRECTIONAL	ISOLATED	Not Qualified	1 W						SILICON
1N5340B-TP	Micro Commercial Components	ZENER DIODE	AXIAL	WIRE	2	NO	ROUND	PLASTIC/EPOXY	200 mA	SINGLE		6 V		ZENER	.001 uA	1		LONG FORM	Voltage Reference Diodes	5 %	300 ohm	150 Cel	1 ohm		MATTE TIN	O-PALF-W2	1	UNIDIRECTIONAL	ISOLATED	Not Qualified	5 W		DO-15	e3	10	260	SILICON

Zener Diodes

Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.

Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.

Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.

Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.