Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
5 mA |
SINGLE |
3.7 mV/Cel |
6.2 V |
ZENER |
3 uA |
1 |
LONG FORM |
5 % |
150 ohm |
200 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
60 ohm |
TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.55 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
8 mA |
SINGLE |
36 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5.56 % |
175 Cel |
40 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
LOW NOISE |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||
Microsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
8 mA |
SINGLE |
36 V |
ZENER |
1 |
LONG FORM |
6 % |
200 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
PRO-ELECTRON SPECIFICATION |
DO-41 |
e0 |
SILICON |
|||||||||||||||||||||||
Bytesonic Electronics |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
8 mA |
SINGLE |
34.2 mV/Cel |
36 V |
ZENER |
.5 uA |
1 |
LONG FORM |
1000 ohm |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
50 mA |
SINGLE |
4.3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.98 % |
175 Cel |
13 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
LOW NOISE |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
50 mA |
SINGLE |
4.3 V |
ZENER |
3 uA |
1 |
LONG FORM |
5 % |
500 ohm |
200 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
DO-41 |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
UNSPECIFIED |
50 mA |
SINGLE |
4.3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.98 % |
175 Cel |
13 ohm |
Tin/Silver (Sn96.5Ag3.5) |
O-XALF-W2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
LOW NOISE |
DO-41 |
e2 |
30 |
260 |
SILICON |
|||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
50 mA |
SINGLE |
4.3 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-55 Cel |
TIN |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
HIGH RELIABILITY |
DO-41 |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||
Onsemi |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
50 mA |
SINGLE |
4.3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
500 ohm |
Tin/Lead (Sn/Pb) |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-204AL |
e0 |
SILICON |
||||||||||||||||||||||
National Semiconductor |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
50 mA |
SINGLE |
4.3 V |
ZENER |
3 uA |
1 |
LONG FORM |
5 % |
500 ohm |
200 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.3 W |
DO-41 |
SILICON |
||||||||||||||||||||||||
|
Tak Cheong Electronics Holdings |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
50 mA |
SINGLE |
4.3 V |
1.2 V |
ZENER |
3 uA |
1 |
1 V |
LONG FORM |
6.98 % |
500 ohm |
200 Cel |
13 ohm |
-65 Cel |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
1.3 W |
DO-204AL |
SILICON |
||||||||||||||||||||
|
Diodes Incorporated |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.05 mA |
SINGLE |
5.6 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.1 V |
ZENER |
2 uA |
1 |
1 V |
SMALL OUTLINE |
2.16 % |
500 ohm |
150 Cel |
80 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.2 W |
LOW IMPEDANCE |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||
Microchip Technology |
ZENER DIODE |
BOTTOM |
PIN/PEG |
2 |
NO |
ROUND |
METAL |
830 mA |
SINGLE |
15 V |
ZENER |
1 |
FLANGE MOUNT |
5 % |
TIN LEAD OVER NICKEL |
O-MBFM-P2 |
UNIDIRECTIONAL |
ANODE |
Qualified |
50 W |
TO-204AD |
e0 |
SILICON |
MIL-19500/114 |
||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
240 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
5 % |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
5 W |
e0 |
SILICON |
MIL-19500/356H |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
3 mA |
SINGLE |
40.85 mV/Cel |
43 V |
ZENER |
.5 uA |
1 |
33 V |
LONG FORM |
5 % |
1000 ohm |
175 Cel |
93 ohm |
-65 Cel |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.4 W |
METALLURGICALLY BONDED |
DO-204AH |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
1.41 mV/Cel |
4.7 V |
1.1 V |
ZENER |
5 uA |
1 |
2 V |
LONG FORM |
5 % |
1900 ohm |
175 Cel |
19 ohm |
-65 Cel |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
2.7 V |
.9 V |
ZENER |
20 uA |
1 |
1 V |
SMALL OUTLINE |
Voltage Reference Diodes |
7.41 % |
1000 ohm |
150 Cel |
100 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.3 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
3.3 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
6.06 % |
150 Cel |
95 ohm |
TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.2 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.6 V |
.9 V |
ZENER |
1 uA |
1 |
2 V |
SMALL OUTLINE |
Voltage Reference Diodes |
2.14 % |
40 ohm |
150 Cel |
200 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.2 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.05 mA |
SINGLE |
2.7 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
e3 |
30 |
260 |
SILICON |
UL RECOGNIZED |
|||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.05 mA |
SINGLE |
4.7 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.5 W |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.05 mA |
SINGLE |
4.7 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
|||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.05 mA |
SINGLE |
4.7 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
150 Cel |
-55 Cel |
Matte Tin (Sn) |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
10 |
260 |
SILICON |
||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
.05 mA |
SINGLE |
11 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
AEC-Q101 |
||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
1.792 mV/Cel |
5.6 V |
ZENER |
5 uA |
1 |
3 V |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
1600 ohm |
150 Cel |
11 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
4.592 mV/Cel |
8.2 V |
ZENER |
3 uA |
1 |
6.5 V |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
500 ohm |
150 Cel |
8 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
SILICON |
||||||||||||||||||
|
Diodes Incorporated |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
7.8 mA |
SINGLE |
16 V |
.9 V |
ZENER |
.1 uA |
1 |
12 V |
SMALL OUTLINE |
5 % |
600 ohm |
150 Cel |
17 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.37 W |
HGH RELIABILITY |
e3 |
10 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
2.7 mV/Cel |
6.2 V |
ZENER |
.5 uA |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2.18 % |
150 Cel |
TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
|||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
5.1 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
150 Cel |
250 ohm |
-65 Cel |
TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
.31 W |
e3 |
30 |
260 |
SILICON |
IEC-60134 |
||||||||||||||||||
Renesas Electronics |
ZENER DIODE |
AXIAL |
WIRE |
2 |
NO |
ROUND |
GLASS |
20 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2.15 % |
175 Cel |
13 ohm |
TIN LEAD |
O-LALF-W2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-35 |
e0 |
SILICON |
||||||||||||||||||||||
|
Micro Commercial Components |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
125 mA |
SINGLE |
11 V |
ZENER |
.005 uA |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
125 ohm |
150 Cel |
2.5 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
Not Qualified |
5 W |
DO-214AA |
e3 |
10 |
260 |
SILICON |
||||||||||||||||
|
Diotec Semiconductor Ag |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
50 mA |
SINGLE |
13 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
150 Cel |
10 ohm |
O-PELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
2 W |
DO-213AB |
260 |
SILICON |
|||||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
18.7 mA |
SINGLE |
20 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
14 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
C BEND |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
11.4 mA |
SINGLE |
33 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
33 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-C2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
24.2 V |
.9 V |
ZENER |
.05 uA |
1 |
16.8 V |
SMALL OUTLINE |
5.79 % |
120 ohm |
150 Cel |
70 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.3 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
3.9 V |
.9 V |
ZENER |
3 uA |
1 |
1 V |
SMALL OUTLINE |
5.13 % |
1000 ohm |
150 Cel |
90 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
8.2 V |
.9 V |
ZENER |
.7 uA |
1 |
5 V |
SMALL OUTLINE |
Voltage Reference Diodes |
2 % |
160 ohm |
150 Cel |
15 ohm |
-65 Cel |
MATTE TIN |
R-PDSO-F2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
20 mA |
SINGLE |
3.6 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
5 % |
150 Cel |
24 ohm |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||
|
Onsemi |
ZENER DIODE |
DUAL |
GULL WING |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
1.5 mA |
SINGLE |
82 V |
ZENER |
1 |
SMALL OUTLINE |
5 % |
150 Cel |
-55 Cel |
MATTE TIN |
R-PDSO-G2 |
1 |
UNIDIRECTIONAL |
.5 W |
e3 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
4.3 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
90 ohm |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-213AA |
e2 |
10 |
260 |
SILICON |
|||||||||||||||||
|
Vishay Telefunken |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
4.3 V |
ZENER |
1 |
LONG FORM |
6.977 % |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
DO-213AA |
e2 |
SILICON |
||||||||||||||||||||||
|
ROHM |
ZENER DIODE |
DUAL |
FLAT |
2 |
YES |
RECTANGULAR |
PLASTIC/EPOXY |
5 mA |
SINGLE |
18 V |
ZENER |
1 |
SMALL OUTLINE |
Voltage Reference Diodes |
2.2 % |
150 Cel |
65 ohm |
TIN |
R-PDSO-F2 |
UNIDIRECTIONAL |
.2 W |
HIGH RELIABILITY |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||||||
|
Diotec Semiconductor Ag |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
91 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
95 ohm |
TIN SILVER COPPER OVER NICKEL |
O-PELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-213AA |
5 |
260 |
SILICON |
|||||||||||||||||||
|
Diotec Semiconductor Ag |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
9.1 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
8 ohm |
TIN SILVER COPPER OVER NICKEL |
O-PELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-213AA |
10 |
260 |
SILICON |
|||||||||||||||||||
|
Diotec Semiconductor Ag |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
5 mA |
SINGLE |
91 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-50 Cel |
O-PELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-213AA |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
50 mA |
SINGLE |
15 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.76 % |
175 Cel |
9 ohm |
Tin/Silver (Sn97.5Ag2.5) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-213AB |
e2 |
30 |
260 |
SILICON |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.