Part | RoHS | Manufacturer | Diode Type | Terminal Position | Terminal Form | No. of Terminals | Surface Mount | Package Shape | Package Body Material | Working Test Current | Config | Maximum Voltage Temperature Coefficient | Nominal Reference Voltage | Maximum Output Current | Maximum Non Repetitive Peak Reverse Power Dissipation | Maximum Forward Voltage (VF) | Nominal Breakdown Voltage | Maximum Reverse Recovery Time | Technology | Maximum Reverse Current | No. of Elements | Reverse Test Voltage | Package Style (Meter) | Sub-Category | Maximum Voltage Tolerance | Maximum Repetitive Peak Reverse Voltage | Maximum Knee Impedance | Maximum Operating Temperature | Maximum Dynamic Impedance | Minimum Operating Temperature | Terminal Finish | JESD-30 Code | Moisture Sensitivity Level (MSL) | Polarity | Case Connection | Qualification | Maximum Power Dissipation | Additional Features | JEDEC-95 Code | Maximum Clamping Voltage | Minimum Breakdown Voltage | Maximum Non Repetitive Peak Forward Current | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Diode Element Material | Maximum Breakdown Voltage | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Telefunken |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
7.5 V |
ZENER |
1 |
LONG FORM |
6.04 % |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
SILICON |
|||||||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
11 mV/Cel |
13.25 V |
ZENER |
.1 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
30 ohm |
-65 Cel |
Tin (Sn) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
0 mV/Cel |
2.4 V |
ZENER |
50 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
100 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
66.9 mA |
SINGLE |
ZENER |
1 |
LONG FORM |
5 % |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
1.5 W |
HIGH RELIABILITY |
DO-213AB |
SILICON |
||||||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
3 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
1 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
1 mA |
SINGLE |
15 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
3.1 mV/Cel |
6.2 V |
ZENER |
10 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
1200 ohm |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
HIGH RELIABILTY |
DO-213AA |
e0 |
SILICON |
MIL-19500 |
|||||||||||||||||
|
Diotec Semiconductor Ag |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
PLASTIC/EPOXY |
2.5 mA |
SINGLE |
200 V |
ZENER |
1 |
LONG FORM |
2 % |
175 Cel |
-50 Cel |
O-PELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
1.3 W |
DO-213AB |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
11 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
8 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
DO-213AA |
e0 |
SILICON |
|||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
8 ohm |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
TR, 7 INCH; 2000 |
DO-213AA |
e0 |
SILICON |
||||||||||||||||||||
Microsemi |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
1.9 mA |
SINGLE |
200 V |
ZENER |
1 |
LONG FORM |
20 % |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.25 W |
METALLURGICALLY BONDED, HIGH RELIABILITY |
DO-213AB |
e0 |
SILICON |
|||||||||||||||||||||||
|
Panjit International |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
33 V |
ZENER |
1 |
LONGFORM |
Voltage Reference Diodes |
5 % |
175 Cel |
80 ohm |
UNIDIRECTIONAL |
.5 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
33 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
6.06 % |
175 Cel |
80 ohm |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
12 V |
ZENER |
.1 uA |
1 |
9.1 V |
LONG FORM |
Voltage Reference Diodes |
5 % |
90 ohm |
175 Cel |
20 ohm |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
10 |
260 |
SILICON |
|||||||||||||||
|
Vishay Telefunken |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
12 V |
ZENER |
1 |
LONG FORM |
5.394 % |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
SILICON |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
5.6 V |
ZENER |
1 |
LONG FORM |
1 % |
TIN LEAD |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500/435F |
||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
240 mA |
SINGLE |
5.1 V |
ZENER |
1 |
LONG FORM |
5 % |
Tin/Lead (Sn/Pb) |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
5 W |
e0 |
SILICON |
MIL-19500/356H |
|||||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
.032 mV/Cel |
6.4 V |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
1 |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
e0 |
SILICON |
MIL-19500/452 |
|||||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
20 mA |
SINGLE |
.51 mV/Cel |
5.1 V |
ZENER |
1 uA |
1 |
1 V |
LONG FORM |
5 % |
175 Cel |
17 ohm |
-65 Cel |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
METALLURGICAL BONDED |
DO-213AA |
SILICON |
MIL-19500 |
||||||||||||||||||||
|
ROHM |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
UNSPECIFIED |
20 mA |
SINGLE |
ZENER |
5 uA |
1 |
LONG FORM |
300 ohm |
175 Cel |
TIN |
O-XELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
e3 |
SILICON |
||||||||||||||||||||||||
Diodes Incorporated |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
31 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
4.5 ohm |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
SILICON |
||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
31 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
175 Cel |
4.5 ohm |
TIN SILVER |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
DO-213AB |
e2 |
30 |
260 |
SILICON |
AEC-Q101 |
|||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
31 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
1 W |
e3 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
31 mA |
SINGLE |
8.2 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
MATTE TIN |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
1 W |
e3 |
SILICON |
||||||||||||||||||||||||
Diodes Incorporated |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
2.5 mA |
SINGLE |
100 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
350 ohm |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
SILICON |
||||||||||||||||||||||||
Micro Commercial Components |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
100 mA |
SINGLE |
6.2 V |
ZENER |
.0005 uA |
1 |
LONG FORM |
6.45 % |
2 ohm |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
e0 |
SILICON |
||||||||||||||||||||||||
Micro Commercial Components |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
10 mA |
SINGLE |
62 V |
ZENER |
.001 uA |
1 |
LONG FORM |
6.45 % |
80 ohm |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
e0 |
SILICON |
||||||||||||||||||||||||
|
Panjit International |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
SINGLE |
27 V |
ZENER |
1 |
LONGFORM |
Voltage Reference Diodes |
5 % |
175 Cel |
80 ohm |
UNIDIRECTIONAL |
.5 W |
NOT SPECIFIED |
NOT SPECIFIED |
SILICON |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
27 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
7.04 % |
175 Cel |
80 ohm |
Tin/Silver (Sn/Ag) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
LOW NOISE |
e2 |
40 |
260 |
SILICON |
||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
20 mV/Cel |
22 V |
ZENER |
.05 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
200 Cel |
55 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
22 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
200 Cel |
55 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
24 V |
ZENER |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
200 Cel |
70 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
2.5 mV/Cel |
5.6 V |
ZENER |
1 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
200 Cel |
40 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
3.7 mV/Cel |
6.2 V |
ZENER |
3 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
2 % |
200 Cel |
10 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
|
NXP Semiconductors |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
0 mV/Cel |
4.3 V |
ZENER |
3 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
200 Cel |
90 ohm |
-65 Cel |
TIN |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.4 W |
e3 |
30 |
260 |
SILICON |
||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
22 V |
ZENER |
1 |
LONG FORM |
2 % |
175 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
HIGH SURGE CAPABILITY |
e0 |
SILICON |
||||||||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
22 V |
ZENER |
.1 uA |
1 |
16 V |
LONG FORM |
2 % |
220 ohm |
175 Cel |
55 ohm |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
e3 |
SILICON |
|||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
22 V |
ZENER |
1 |
LONG FORM |
2 % |
175 Cel |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY |
DO-213AC |
e3 |
SILICON |
||||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
22 V |
ZENER |
.1 uA |
1 |
16 V |
LONG FORM |
2 % |
220 ohm |
175 Cel |
55 ohm |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
e3 |
SILICON |
|||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
6.2 V |
ZENER |
.1 uA |
1 |
2 V |
LONG FORM |
2 % |
200 ohm |
175 Cel |
10 ohm |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
e3 |
SILICON |
|||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
6.2 V |
ZENER |
1 |
LONG FORM |
2 % |
175 Cel |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY |
DO-213AC |
e3 |
SILICON |
||||||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
6.2 V |
ZENER |
.1 uA |
1 |
2 V |
LONG FORM |
2 % |
200 ohm |
175 Cel |
10 ohm |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
.5 W |
e3 |
SILICON |
|||||||||||||||||||
|
Micro Commercial Components |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
13 V |
ZENER |
.0001 uA |
1 |
LONG FORM |
110 ohm |
150 Cel |
26 ohm |
-55 Cel |
Matte Tin (Sn) |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY |
e3 |
10 |
260 |
SILICON |
|||||||||||||||||
|
Taiwan Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
5 mA |
SINGLE |
6.2 V |
ZENER |
1 |
LONG FORM |
5 % |
175 Cel |
-65 Cel |
MATTE TIN OVER NICKEL |
O-LELF-R2 |
1 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
.5 W |
HIGH RELIABILITY |
DO-213AC |
e3 |
SILICON |
||||||||||||||||||||
Microchip Technology |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
60.5 mA |
SINGLE |
ZENER |
1 |
LONG FORM |
5 % |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1.5 W |
HIGH RELIABILITY |
DO-213AB |
e0 |
SILICON |
|||||||||||||||||||||||||
Central Semiconductor |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
6 mA |
SINGLE |
43 V |
ZENER |
5 uA |
1 |
LONG FORM |
Voltage Reference Diodes |
5 % |
1500 ohm |
200 Cel |
70 ohm |
-65 Cel |
TIN LEAD |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Not Qualified |
1 W |
e0 |
SILICON |
||||||||||||||||||||
Defense Logistics Agency |
ZENER DIODE |
END |
WRAP AROUND |
2 |
YES |
ROUND |
GLASS |
.25 mA |
SINGLE |
1.8 V |
ZENER |
1 |
LONG FORM |
2 % |
O-LELF-R2 |
UNIDIRECTIONAL |
ISOLATED |
Qualified |
.5 W |
METALLURGICALLY BONDED |
DO-213AA |
SILICON |
MIL-19500/435F |
Zener diodes are electronic components that are designed to operate in the reverse breakdown region of their P-N junction, providing a stable and predictable voltage output. They are commonly used in electronic circuits as voltage regulators, voltage references, and surge protectors.
Zener diodes operate based on the properties of their P-N junction, which is designed to have a narrow depletion region and a low breakdown voltage. When a reverse voltage is applied to the diode, the depletion region widens, allowing a small reverse current to flow. As the voltage across the diode increases, the reverse current increases exponentially, maintaining a stable voltage across the diode.
Zener diodes offer several advantages over other types of voltage regulators, such as simplicity, low cost, and high efficiency. They do not require any external components, such as capacitors or inductors, and they can provide a stable output voltage over a wide range of input voltages and temperatures.
Zener diodes are commonly used in electronic circuits that require a stable voltage source, such as power supplies, battery chargers, and voltage regulators. They come in different package sizes and voltage ratings, depending on the application and the required performance.