Part | RoHS | Manufacturer | Interface IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Maximum Supply Voltage | Maximum Output Current | No. of Functions | No. of Channels | Technology | Screening Level | Built-in Protections | Maximum Supply Current | Input Characteristics | Nominal Supply Voltage | Maximum Supply Voltage-1 | Turn-on Time | Power Supplies (V) | Nominal Negative Supply Voltage | Package Style (Meter) | Package Equivalence Code | Minimum Supply Voltage-1 | Sub-Category | Minimum Supply Voltage | Terminal Pitch | Maximum Operating Temperature | Nominal Supply Voltage-1 | Output Characteristics | Minimum Operating Temperature | Driver No. of Bits | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Seated Height | Nominal Output Peak Current Limit | Width | Turn-off Time | Qualification | Output Polarity | High Side Driver | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Current Flow Direction | Length |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
16 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-PRF-38535 Class V |
10 V |
.3 us |
FLATPACK |
4.65 V |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F16 |
.3 us |
Qualified |
NO |
||||||||||||||||||||||||||||||
STMicroelectronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
16 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-PRF-38535 Class V |
10 V |
.3 us |
FLATPACK |
4.65 V |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F16 |
.3 us |
Qualified |
NO |
||||||||||||||||||||||||||||||
STMicroelectronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
16 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-PRF-38535 Class V |
10 V |
.3 us |
FLATPACK |
4.65 V |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F16 |
.3 us |
Qualified |
NO |
||||||||||||||||||||||||||||||
STMicroelectronics |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
10 |
DFP |
SQUARE |
100k Rad(Si) |
UNSPECIFIED |
YES |
18 V |
2 |
MIL-PRF-38535 Class V |
10 V |
.3 us |
FLATPACK |
4.65 V |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
S-XDFP-F10 |
2.62 mm |
6.48 mm |
.3 us |
Qualified |
NO |
6.48 mm |
||||||||||||||||||||||||||
|
NXP Semiconductors |
MILITARY |
GULL WING |
6 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
SMALL OUTLINE, THIN PROFILE |
TSOP6,.11,37 |
MOSFET Drivers |
.95 mm |
150 Cel |
-65 Cel |
DUAL |
R-PDSO-G6 |
Not Qualified |
||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
MILITARY |
GULL WING |
6 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
SMALL OUTLINE, THIN PROFILE |
TSOP6,.11,37 |
MOSFET Drivers |
.95 mm |
150 Cel |
-65 Cel |
DUAL |
R-PDSO-G6 |
Not Qualified |
||||||||||||||||||||||||||||||||||||
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
FLATPACK |
6 V |
10 V |
1.27 mm |
125 Cel |
-55 Cel |
DUAL |
R-CDFP-F14 |
2.92 mm |
2 A |
6.285 mm |
.22 us |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
25 V |
1 |
CMOS |
15 V |
20 V |
FLATPACK |
10 V |
0 V |
1.27 mm |
125 Cel |
15 V |
-55 Cel |
DUAL |
R-CDFP-F14 |
2.92 mm |
6.285 mm |
YES |
LG-MAX |
9.91 mm |
|||||||||||||||||||||||||
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
18 |
QCCN |
RECTANGULAR |
100k Rad(Si) |
UNSPECIFIED |
YES |
25 V |
1 |
HVCMOS |
15 V |
260 us |
CHIP CARRIER |
0 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
R-XQCC-N18 |
3.22 mm |
7.305 mm |
220 us |
YES |
8.955 mm |
|||||||||||||||||||||||||||
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
18 |
QCCN |
RECTANGULAR |
100k Rad(Si) |
UNSPECIFIED |
YES |
25 V |
1 |
HVCMOS |
15 V |
260 us |
CHIP CARRIER |
0 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
R-XQCC-N18 |
3.22 mm |
7.305 mm |
220 us |
YES |
8.955 mm |
|||||||||||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
UNSPECIFIED |
NO |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
IN-LINE |
6 V |
10 V |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
4.44 mm |
2 A |
7.62 mm |
.22 us |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
19 mm |
||||||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
18 |
QCCN |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
CHIP CARRIER |
6 V |
10 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
R-CQCC-N18 |
3.22 mm |
2 A |
7.305 mm |
.22 us |
YES |
NOT SPECIFIED |
NOT SPECIFIED |
8.955 mm |
||||||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
UNSPECIFIED |
NO |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
15 |
IN-LINE |
DIP14,.3 |
6 V |
MOSFET Drivers |
10 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T14 |
4.44 mm |
2 A |
7.62 mm |
.22 us |
Not Qualified |
YES |
e0 |
19 mm |
||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
18 |
QCCN |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
20 V |
1 |
CMOS |
15 V |
420 V |
.26 us |
15 |
CHIP CARRIER |
LCC18,.3X.35 |
6 V |
MOSFET Drivers |
10 V |
1.27 mm |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
R-CQCC-N18 |
3.22 mm |
2 A |
7.305 mm |
.22 us |
Not Qualified |
YES |
e0 |
8.955 mm |
||||||||||||||||||
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
FLAT |
14 |
DFP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, METAL-SEALED COFIRED |
YES |
20 V |
1 |
CMOS |
15 V |
20 V |
FLATPACK |
10 V |
0 V |
1.27 mm |
125 Cel |
15 V |
-55 Cel |
DUAL |
R-CDFP-F14 |
2.92 mm |
6.285 mm |
YES |
LG-MAX |
9.91 mm |
|||||||||||||||||||||||||
Infineon Technologies |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
GULL WING |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
5 V |
5 |
SMALL OUTLINE |
SOP8,.25 |
MOSFET Drivers |
1.27 mm |
150 Cel |
-55 Cel |
DUAL |
R-PDSO-G8 |
Not Qualified |
|||||||||||||||||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BICMOS |
12 V |
IN-LINE |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-PDIP-T8 |
4.44 mm |
.2 A |
7.62 mm |
Not Qualified |
YES |
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT |
NOT SPECIFIED |
NOT SPECIFIED |
10.31 mm |
||||||||||||||||||||||||||
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
UNSPECIFIED |
NO |
20 V |
1 |
CMOS |
15 V |
620 V |
.26 us |
15 |
IN-LINE |
DIP14,.3 |
6 V |
MOSFET Drivers |
10 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T14 |
3 |
4.44 mm |
2 A |
7.62 mm |
.22 us |
Not Qualified |
YES |
e0 |
19 mm |
||||||||||||||||||
|
Infineon Technologies |
HALF BRIDGE BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
BICMOS |
12 V |
IN-LINE |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-PDIP-T8 |
4.44 mm |
.2 A |
7.62 mm |
Not Qualified |
YES |
FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT |
40 |
260 |
10.31 mm |
||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
1 |
BICMOS |
18 V |
.1 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
6 A |
.1 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
1 |
BICMOS |
18 V |
.1 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
6 A |
.1 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
.12 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
1.5 A |
.06 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||||
Maxim Integrated |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T8 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
1 |
BICMOS |
18 V |
.1 us |
IN-LINE |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
6 A |
.1 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
.12 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
1.5 A |
.06 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
CMOS |
MIL-STD-883 Class B |
.12 us |
4.5/18 |
CHIP CARRIER |
LCC20,.35SQ |
MOSFET Drivers |
4.5 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
1 |
1.5 A |
.06 us |
Not Qualified |
NO |
|||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
2 |
CMOS |
38535Q/M;38534H;883B |
.12 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
1 |
5.08 mm |
1.5 A |
7.62 mm |
.06 us |
Not Qualified |
NO |
e0 |
|||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-STD-883 |
.1 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
.1 us |
Not Qualified |
NO |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-STD-883 |
.04 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
.06 us |
Not Qualified |
NO |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
.12 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
1.5 A |
.06 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
1 |
BICMOS |
18 V |
.1 us |
IN-LINE |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
6 A |
.1 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
.12 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
1.5 A |
.06 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||||||||||
Maxim Integrated |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T8 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
1 |
BICMOS |
MIL-STD-883 |
.1 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
1 |
5.08 mm |
6 A |
7.62 mm |
.1 us |
Not Qualified |
NO |
e0 |
20 |
240 |
|||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-STD-883 |
.1 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
.1 us |
Not Qualified |
NO |
||||||||||||||||||||||||||||||||
Maxim Integrated |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T8 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-STD-883 |
.04 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
.06 us |
Not Qualified |
NO |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
CMOS |
MIL-STD-883 Class B |
.12 us |
4.5/18 |
CHIP CARRIER |
LCC20,.35SQ |
MOSFET Drivers |
4.5 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
1 |
1.5 A |
.06 us |
Not Qualified |
NO |
|||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
1 |
BICMOS |
MIL-STD-883 Class B |
18 V |
.1 us |
4.5/18 |
CHIP CARRIER |
LCC20,.35SQ |
MOSFET Drivers |
4.5 V |
1.27 mm |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
1 |
6 A |
.1 us |
Not Qualified |
NO |
||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
18 V |
2 |
CMOS |
MIL-STD-883 Class B (Modified) |
.06 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T8 |
5.08 mm |
2 A |
7.62 mm |
.04 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-STD-883 |
.04 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
.06 us |
Not Qualified |
NO |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
1 |
BICMOS |
MIL-STD-883 |
.1 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
1 |
5.08 mm |
6 A |
7.62 mm |
.1 us |
Not Qualified |
NO |
e0 |
|||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
WIRE |
8 |
ROUND |
METAL |
NO |
15 V |
2 |
CMOS |
MIL-STD-883 Class B |
.04 us |
4.5/15 |
CYLINDRICAL |
CAN8,.2 |
MOSFET Drivers |
4.5 V |
125 Cel |
-55 Cel |
TIN LEAD |
BOTTOM |
O-MBCY-W8 |
1 |
.06 us |
Not Qualified |
YES |
e0 |
||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
YES |
18 V |
2 |
MIL-STD-883 |
.04 us |
CHIP CARRIER |
4.5 V |
125 Cel |
-55 Cel |
QUAD |
S-CQCC-N20 |
.06 us |
Not Qualified |
NO |
||||||||||||||||||||||||||||||||
Maxim Integrated |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T8 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
18 V |
1 |
CMOS |
MIL-STD-883 |
18 V |
.12 us |
7/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
7 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T8 |
1 |
5.08 mm |
6 A |
7.62 mm |
.1 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
18 V |
2 |
CMOS |
.12 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T8 |
1 |
5.08 mm |
1.5 A |
7.62 mm |
.06 us |
Not Qualified |
NO |
e0 |
||||||||||||||||||||||
Maxim Integrated |
BUFFER OR INVERTER BASED MOSFET DRIVER |
MILITARY |
THROUGH-HOLE |
8 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
18 V |
2 |
CMOS |
.06 us |
4.5/18 |
IN-LINE |
DIP8,.3 |
MOSFET Drivers |
4.5 V |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-CDIP-T8 |
1 |
5.08 mm |
2 A |
7.62 mm |
.04 us |
Not Qualified |
NO |
e0 |
MOSFET gate drivers are electronic components that are used to control and drive the operation of MOSFETs, which are commonly used as switches in electronic circuits. MOSFETs require a voltage applied to the gate terminal to turn them on or off, and MOSFET gate drivers provide this voltage.
MOSFET gate drivers can be classified into several types based on their specific applications and characteristics. Some of the most common types of MOSFET gate drivers include single-channel drivers, half-bridge drivers, and full-bridge drivers.
Single-channel drivers are used to control a single MOSFET, while half-bridge and full-bridge drivers are used to control multiple MOSFETs in various configurations. MOSFET gate drivers typically include a level shifter, a buffer, and a gate driver circuit.
MOSFET gate drivers are critical components of electronic circuits, providing a way to control and drive the operation of MOSFETs. They are used in a wide range of applications, including motor control, power supplies, and inverters.