Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments |
NAND GATE |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
4 |
TTL |
MIL-M-38510 Class B |
2 |
TUBE |
5 |
50 pF |
CHIP CARRIER |
7 ns |
1 Amp |
1.27 mm |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
4.5 V |
10.2 mA |
e0 |
8.89 mm |
F/FAST |
||||||||||||||||
Texas Instruments |
INVERTER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
6 |
TTL |
MIL-M-38510 |
1 |
TUBE |
5 |
50 pF |
CHIP CARRIER |
17 ns |
8 Amp |
1.27 mm |
125 Cel |
3-STATE |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
4.5 V |
4.4 mA |
e0 |
8.89 mm |
ALS |
|||||||||||||||
|
Texas Instruments |
BUFFER |
INDUSTRIAL |
BALL |
4 |
VFBGA |
SQUARE |
UNSPECIFIED |
YES |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA4,2X2,20 |
11 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-XBGA-B4 |
1 |
5.5 V |
.5 mm |
.9 mm |
Not Qualified |
1.65 V |
.01 mA |
e1 |
NOT SPECIFIED |
260 |
.9 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
INVERTER |
INDUSTRIAL |
BALL |
4 |
VFBGA |
SQUARE |
UNSPECIFIED |
YES |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA4,2X2,20 |
11 ns |
32 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-XBGA-B4 |
1 |
5.5 V |
.5 mm |
.9 mm |
Not Qualified |
1.65 V |
.01 mA |
e1 |
NOT SPECIFIED |
260 |
.9 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
BUFFER |
INDUSTRIAL |
BALL |
4 |
VFBGA |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
GRID ARRAY |
BGA4,2X2,20 |
8.3 ns |
32 Amp |
Gates |
.5 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-XBGA-B4 |
1 |
5.5 V |
.5 mm |
.888 mm |
Not Qualified |
1.65 V |
.01 mA |
e1 |
NOT SPECIFIED |
260 |
.888 mm |
LVC/LCX/Z |
|||||||||
|
Texas Instruments |
BUFFER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
2 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
9.3 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
INVERTER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
11 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
INVERTER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
7.5 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
BUFFER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
8.6 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
OPEN-DRAIN |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
|||||||||
|
Texas Instruments |
INVERTER |
AUTOMOTIVE |
NO LEAD |
4 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
1 |
3.3 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
7.5 ns |
32 Amp |
.48 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N4 |
1 |
5.5 V |
.4 mm |
.8 mm |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
.8 mm |
LVC/LCX/Z |
|||||||||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
12.6 ns |
24 Amp |
Gates |
.35 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Nickel/Palladium (Ni/Pd) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.55 mm |
1 mm |
Not Qualified |
1.65 V |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
AND GATE |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
2 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
8 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
BUFFER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
2 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
9.3 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
INVERTER |
INDUSTRIAL |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
7.5 ns |
32 Amp |
Gates |
.35 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
NXP Semiconductors |
BUFFER |
AUTOMOTIVE |
GULL WING |
8 |
TSSOP |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP8,.16 |
13.1 ns |
24 Amp |
Gates |
.65 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-G8 |
1 |
5.5 V |
1.1 mm |
3 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
3 mm |
LVC/LCX/Z |
|||||||||||
|
Texas Instruments |
BUFFER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
8.6 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
OPEN-DRAIN |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
|||||||||
|
Texas Instruments |
AND GATE |
AUTOMOTIVE |
NO LEAD |
4 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
2 |
3.3 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
10 ns |
32 Amp |
.48 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N4 |
1 |
5.5 V |
.4 mm |
.8 mm |
1.65 V |
e4 |
NOT SPECIFIED |
260 |
.8 mm |
LVC/LCX/Z |
||||||||||||||||||
|
Texas Instruments |
INVERTER |
INDUSTRIAL |
BUTT |
5 |
HVBCC |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
1 |
CMOS |
1 |
3.3 |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
11 ns |
32 Amp |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
BOTTOM |
S-PBCC-B5 |
1 |
5.5 V |
.4 mm |
.8 mm |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
.8 mm |
LVC/LCX/Z |
|||||||||||||||||
|
Texas Instruments |
AND GATE |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
3 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
17.2 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
BUFFER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
11 ns |
24 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
INVERTER |
INDUSTRIAL |
BALL |
4 |
VFBGA |
SQUARE |
UNSPECIFIED |
NO |
YES |
1 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA4,2X2,20 |
7.5 ns |
32 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-XBGA-B4 |
1 |
5.5 V |
.5 mm |
.9 mm |
Not Qualified |
1.65 V |
.01 mA |
e1 |
NOT SPECIFIED |
260 |
.9 mm |
LVC/LCX/Z |
||||||||||
|
NXP Semiconductors |
INVERTER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
12 ns |
24 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Tin (Sn) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.5 mm |
1 mm |
Not Qualified |
1.65 V |
e3 |
30 |
260 |
1 mm |
LVC/LCX/Z |
||||||||||||
|
Texas Instruments |
INVERTER |
AUTOMOTIVE |
NO LEAD |
14 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
6 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC14/18,.14SQ,20 |
11 ns |
24 Amp |
Gates |
.5 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
S-PQCC-N14 |
2 |
3.6 V |
1 mm |
3.5 mm |
Not Qualified |
2 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
3.5 mm |
LVC/LCX/Z |
||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
14.5 ns |
32 Amp |
Gates |
.35 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.55 mm |
1 mm |
Not Qualified |
1.65 V |
100 mA |
e4 |
30 |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
NXP Semiconductors |
INVERTER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
12 ns |
24 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
TIN |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.35 mm |
1 mm |
Not Qualified |
1.65 V |
e3 |
30 |
260 |
1 mm |
LVC/LCX/Z |
||||||||||||
|
Onsemi |
BUFFER |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
10.6 ns |
32 Amp |
.35 mm |
125 Cel |
-40 Cel |
DUAL |
S-PDSO-N6 |
5.5 V |
.55 mm |
1 mm |
1.65 V |
100 mA |
1 mm |
LVC/LCX/Z |
|||||||||||||||||||
|
NXP Semiconductors |
INVERTER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
9.5 ns |
24 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
TIN |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.35 mm |
1 mm |
Not Qualified |
1.65 V |
e3 |
30 |
260 |
1 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
10.6 ns |
32 Amp |
Gates |
.35 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.55 mm |
1 mm |
Not Qualified |
1.65 V |
100 mA |
e4 |
30 |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
OR GATE |
AUTOMOTIVE |
NO LEAD |
14 |
HVQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
4 |
CMOS |
2 |
TR |
2.5 |
3.3 |
50 pF |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
LCC14/18,.14SQ,20 |
19 ns |
12 Amp |
Gates |
.5 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
S-PQCC-N14 |
2 |
5.5 V |
1 mm |
3.5 mm |
Not Qualified |
2 V |
.02 mA |
e4 |
NOT SPECIFIED |
260 |
3.5 mm |
LV/LV-A/LVX/H |
||||||||||
|
NXP Semiconductors |
AND GATE |
AUTOMOTIVE |
GULL WING |
8 |
TSSOP |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP8,.16 |
11.3 ns |
24 Amp |
Gates |
.65 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-G8 |
1 |
5.5 V |
1.1 mm |
3 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
3 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
14.5 ns |
32 Amp |
Gates |
.35 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
S-PDSO-N6 |
5.5 V |
.55 mm |
1 mm |
Not Qualified |
1.65 V |
100 mA |
e4 |
1 mm |
LVC/LCX/Z |
|||||||||||||
|
Texas Instruments |
OR GATE |
INDUSTRIAL |
NO LEAD |
4 |
HVSON |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
2 |
3.3 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
26.7 ns |
4 Amp |
.48 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N4 |
1 |
3.6 V |
.4 mm |
.8 mm |
.8 V |
e4 |
NOT SPECIFIED |
260 |
.8 mm |
AUP/ULP/V |
||||||||||||||||||
|
Texas Instruments |
AND GATE |
AUTOMOTIVE |
NO LEAD |
14 |
HQCCN |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
4 |
CMOS |
2 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER, HEAT SINK/SLUG |
LCC14/18,.14SQ,20 |
11.3 ns |
24 Amp |
Gates |
.5 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
QUAD |
S-PQCC-N14 |
2 |
3.6 V |
1 mm |
3.5 mm |
Not Qualified |
1.65 V |
.04 mA |
e4 |
NOT SPECIFIED |
260 |
3.5 mm |
LVC/LCX/Z |
||||||||||
Texas Instruments |
NAND GATE |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
4 |
CMOS |
MIL-PRF-38535 Class Q |
2 |
TUBE |
3.3 |
2/5.5 |
50 pF |
CHIP CARRIER |
LCC20,.35SQ |
13 ns |
50 Amp |
Gate |
1.27 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-CQCC-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Qualified |
2 V |
.02 mA |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
8.89 mm |
AHC/VHC/H/U/V |
|||||||||||
|
Texas Instruments |
OR GATE |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
2 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
8 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
NAND GATE |
INDUSTRIAL |
BUTT |
5 |
HVBCC |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
2 |
3.3 |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
10 ns |
32 Amp |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
BOTTOM |
S-PBCC-B5 |
1 |
5.5 V |
.4 mm |
.8 mm |
1.65 V |
e4 |
30 |
260 |
.8 mm |
LVC/LCX/Z |
||||||||||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
13.1 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
1.6 mm |
LVC/LCX/Z |
||||||||||||||
NXP Semiconductors |
BUFFER |
AUTOMOTIVE |
GULL WING |
8 |
TSSOP |
SQUARE |
PLASTIC/EPOXY |
YES |
3 |
CMOS |
AEC-Q100 |
1 |
1.8 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
13.1 ns |
.65 mm |
125 Cel |
-40 Cel |
DUAL |
S-PDSO-G8 |
5.5 V |
1.1 mm |
3 mm |
1.65 V |
3 mm |
LVC/LCX/Z |
||||||||||||||||||||||||
|
Texas Instruments |
XOR GATE |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
1 |
CMOS |
3 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
12 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
30 |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
NXP Semiconductors |
INVERTER |
AUTOMOTIVE |
GULL WING |
8 |
TSSOP |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
3 |
CMOS |
1 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP8,.16 |
12 ns |
24 Amp |
Gates |
.65 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
S-PDSO-G8 |
1 |
5.5 V |
1.1 mm |
3 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
3 mm |
LVC/LCX/Z |
|||||||||||
|
Onsemi |
BUFFER |
INDUSTRIAL |
NO LEAD |
8 |
VQCCN |
SQUARE |
UNSPECIFIED |
YES |
YES |
3 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
CHIP CARRIER |
LCC8,.06SQ,20 |
13.1 ns |
24 Amp |
Gates |
.5 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-XQCC-N8 |
1 |
5.5 V |
.55 mm |
1.6 mm |
Not Qualified |
1.65 V |
e4 |
30 |
260 |
1.6 mm |
LVC/LCX/Z |
|||||||||||
|
Texas Instruments |
MAJORITY LOGIC GATE |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
YES |
1 |
CMOS |
3 |
TR |
3.3 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
16.4 ns |
32 Amp |
Gates |
.35 mm |
125 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
Not Qualified |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
260 |
1 mm |
LVC/LCX/Z |
||||||||||
|
Texas Instruments |
BUFFER |
AUTOMOTIVE |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
8.6 ns |
32 Amp |
.35 mm |
125 Cel |
OPEN-DRAIN |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
.4 mm |
1 mm |
1.65 V |
.01 mA |
e4 |
30 |
260 |
1 mm |
LVC/LCX/Z |
||||||||||||||
Texas Instruments |
OR GATE |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
6 |
TTL |
MIL-STD-883 |
2 |
TUBE |
5 |
5 |
50 pF |
CHIP CARRIER |
LCC20,.35SQ |
7.5 ns |
15 Amp |
Gates |
1.27 mm |
125 Cel |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Not Qualified |
4.5 V |
36 mA |
e0 |
8.89 mm |
AS |
|||||||||||||
|
NXP Semiconductors |
BUFFER |
AUTOMOTIVE |
GULL WING |
8 |
TSSOP |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
3 |
CMOS |
AEC-Q100 |
1 |
TR |
5 |
5 |
50 pF |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP8,.16 |
32 ns |
4 Amp |
Gates |
.65 mm |
125 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
S-PDSO-G8 |
5.5 V |
1.1 mm |
3 mm |
Not Qualified |
4.5 V |
3 mm |
HCT |
||||||||||||||
|
Texas Instruments |
INVERTER |
INDUSTRIAL |
BUTT |
5 |
HVBCC |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
1 |
3.3 |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
5 ns |
32 Amp |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
BOTTOM |
S-PBCC-B5 |
1 |
5.5 V |
.4 mm |
.8 mm |
1.65 V |
.01 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
.8 mm |
LVC/LCX/Z |
||||||||||||||||||
Texas Instruments |
INVERTER |
MILITARY |
NO LEAD |
20 |
QCCN |
SQUARE |
CERAMIC, METAL-SEALED COFIRED |
NO |
YES |
6 |
TTL |
MIL-STD-883 |
1 |
TUBE |
5 |
5 |
50 pF |
CHIP CARRIER |
LCC20,.35SQ |
84 ns |
8 Amp |
Gate |
1.27 mm |
125 Cel |
OPEN-COLLECTOR |
-55 Cel |
TIN LEAD |
QUAD |
S-CQCC-N20 |
5.5 V |
2.03 mm |
8.89 mm |
Qualified |
4.5 V |
4.2 mA |
e0 |
8.89 mm |
ALS |
||||||||||||
|
Onsemi |
INVERTER |
INDUSTRIAL |
NO LEAD |
6 |
VSON |
SQUARE |
PLASTIC/EPOXY |
NO |
YES |
2 |
CMOS |
1 |
TR |
1.8 |
3.3 |
50 pF |
SMALL OUTLINE, VERY THIN PROFILE |
SOLCC6,.04,14 |
11 ns |
32 Amp |
Gates |
.35 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM |
DUAL |
S-PDSO-N6 |
1 |
5.5 V |
1 mm |
1 mm |
Not Qualified |
1.65 V |
100 mA |
e4 |
30 |
260 |
1 mm |
LVC/LCX/Z |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.