OTHER Logic Gates 208

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Part RoHS Manufacturer Logic IC Type Temperature Grade Terminal Form No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Schmitt Trigger Surface Mount No. of Functions Technology Screening Level No. of Inputs No. of Bits Translation Packing Method Nominal Supply Voltage / Vsup (V) Power Supplies (V) Load Capacitance (CL) Package Style (Meter) Package Equivalence Code Propagation Delay (tpd) Maximum I (ol) Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Minimum Operating Temperature Terminal Finish Terminal Position Control Type Minimum fmax JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Output Polarity Minimum Supply Voltage (Vsup) Maximum Power Supply Current (ICC) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Length Family

MC100E107FNG

Onsemi

XOR/XNOR GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN

QUAD

S-PQCC-J28

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

58 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e3

260

11.505 mm

100E

MC10210L

Onsemi

OR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

2

ECL

3

IN-LINE

2.8 ns

2.54 mm

85 Cel

-30 Cel

DUAL

R-GDIP-T16

5.08 mm

7.62 mm

Not Qualified

19.495 mm

10K

MC10117P

Onsemi

OR-AND/OR-AND-INVERT GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

2

ECL

5

-5.2

-5.2

IN-LINE

DIP16,.3

3.4 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

29 mA

e0

30

235

19.175 mm

10K

MC10107L

Onsemi

XOR/XNOR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

NO

3

ECL

2

-5.2

-5.2

IN-LINE

DIP16,.3

3.7 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-GDIP-T16

-5.72 V

5.08 mm

7.62 mm

Not Qualified

-4.68 V

31 mA

e0

19.495 mm

10K

MC100E104FNG

Onsemi

AND/NAND GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

Tin (Sn)

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

53 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e3

40

260

11.505 mm

100E

MC10188L

Onsemi

BUFFER

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

6

ECL

1

6

-5.2

-5.2

IN-LINE

DIP16,.3

3.5 ns

Bus Driver/Transceivers

2.54 mm

85 Cel

OPEN-EMITTER

-30 Cel

TIN LEAD

DUAL

ENABLE LOW

R-GDIP-T16

-5.72 V

5.08 mm

7.62 mm

Not Qualified

TRUE

-4.68 V

46 mA

e0

19.49 mm

10K

MC10195P

Onsemi

INVERTER

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

6

ECL

1

-5.2

IN-LINE

DIP16,.3

5 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

54 mA

e0

235

19.175 mm

10K

MC10106FNR2

Onsemi

NOR GATE

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

3

ECL

4

TR

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

2.9 ns

Gates

1.27 mm

85 Cel

-30 Cel

TIN LEAD

QUAD

S-PQCC-J20

1

-5.72 V

4.57 mm

8.9662 mm

Not Qualified

-4.68 V

23 mA

ASYMMETRICAL I/PS

e0

235

8.9662 mm

10K

MC10211L

Onsemi

NOR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

2

ECL

3

IN-LINE

2.8 ns

2.54 mm

85 Cel

-30 Cel

DUAL

R-GDIP-T16

5.08 mm

7.62 mm

Not Qualified

19.495 mm

10K

MC74VHCT86ADR2G

Onsemi

XOR GATE

OTHER

GULL WING

14

SOP

RECTANGULAR

PLASTIC/EPOXY

NO

YES

4

CMOS

2

TR

3.3

5

50 pF

SMALL OUTLINE

SOP14,.25

16.5 ns

8 Amp

Gates

1.27 mm

85 Cel

-55 Cel

MATTE TIN

DUAL

R-PDSO-G14

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

2 V

e3

30

260

8.65 mm

AHCT/VHCT

MC100E104FN

Onsemi

AND/NAND GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

Tin/Lead (Sn80Pb20)

QUAD

S-PQCC-J28

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

53 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e0

30

235

11.505 mm

100E

MC74VHCT86AMELG

Onsemi

XOR GATE

OTHER

GULL WING

14

SOP

RECTANGULAR

PLASTIC/EPOXY

NO

YES

4

CMOS

2

TR

3.3

5

50 pF

SMALL OUTLINE

SOP14,.3

16.5 ns

8 Amp

Gates

1.27 mm

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G14

3

5.5 V

2.05 mm

5.275 mm

Not Qualified

2 V

e4

260

10.2 mm

AHCT/VHCT

MC10101FNR2

Onsemi

INVERTER/BUFFER

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

4

ECL

1

TR

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

2.9 ns

Gates

1.27 mm

85 Cel

-30 Cel

TIN LEAD

QUAD

S-PQCC-J20

1

-5.72 V

4.57 mm

8.9662 mm

Not Qualified

-4.68 V

29 mA

e0

235

8.9662 mm

10K

MC10113P

Onsemi

XOR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

4

ECL

2

-5.2

-5.2

IN-LINE

DIP16,.3

5 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

46 mA

e0

235

19.175 mm

10K

MC10104P

Onsemi

AND GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

4

ECL

2

-5.2

-5.2

IN-LINE

DIP16,.3

4 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

39 mA

e0

30

235

19.175 mm

10K

MC10E104FNG

Onsemi

AND/NAND GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN

QUAD

S-PQCC-J28

3

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

46 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e3

260

11.505 mm

10E

MC10101FN

Onsemi

INVERTER/BUFFER

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

4

ECL

1

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

2.9 ns

Gates

1.27 mm

85 Cel

-30 Cel

TIN LEAD

QUAD

S-PQCC-J20

1

-5.72 V

4.57 mm

8.9662 mm

Not Qualified

-4.68 V

29 mA

e0

235

8.9662 mm

10K

MC10189L

Onsemi

INVERTER

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

6

ECL

1

6

-5.2

-5.2

IN-LINE

DIP16,.3

3.5 ns

Bus Driver/Transceivers

2.54 mm

85 Cel

OPEN-EMITTER

-30 Cel

TIN LEAD

DUAL

ENABLE LOW

R-GDIP-T16

-5.72 V

5.08 mm

7.62 mm

Not Qualified

INVERTED

-4.68 V

44 mA

e0

19.49 mm

10K

MC10104L

Onsemi

AND GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

NO

4

ECL

2

-5.2

-5.2

IN-LINE

DIP16,.3

4 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-GDIP-T16

-5.72 V

5.08 mm

7.62 mm

Not Qualified

-4.68 V

39 mA

e0

19.495 mm

10K

MC10109P

Onsemi

OR/NOR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

2

ECL

5

-5.2

-5.2

IN-LINE

DIP16,.3

2.9 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

15 mA

ASYMMETRICAL INPUTS

e0

30

235

19.175 mm

10K

MC10E112FNR2

Onsemi

INVERTER/BUFFER

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

YES

4

ECL

1

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.75 ns

Other Logic ICs

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

NECL MODE: 0V VCC WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

10E

MC10188P

Onsemi

BUFFER

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

6

ECL

1

6

-5.2

-5.2

IN-LINE

DIP16,.3

3.5 ns

Bus Driver/Transceivers

2.54 mm

85 Cel

OPEN-EMITTER

-30 Cel

TIN LEAD

DUAL

ENABLE LOW

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

TRUE

-4.68 V

46 mA

e0

235

19.175 mm

10K

MC100E107FNR2G

Onsemi

XOR/XNOR GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

TR

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN

QUAD

S-PQCC-J28

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

58 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e3

260

11.505 mm

100E

MC10105L

Onsemi

OR/NOR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

NO

3

ECL

3

-5.2

-5.2

IN-LINE

DIP16,.3

2.9 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-GDIP-T16

-5.72 V

5.08 mm

7.62 mm

Not Qualified

-4.68 V

23 mA

ASYMMETRICAL I/PS

e0

19.495 mm

10K

MC100E104FNR2G

Onsemi

AND/NAND GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

TR

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

MATTE TIN

QUAD

S-PQCC-J28

3

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

53 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e3

30

260

11.505 mm

100E

MC100E101FNR2

Onsemi

OR/NOR GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

4

ECL

4

TR

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

42 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

100E

MC100E104FNR2

Onsemi

AND/NAND GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

TR

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

53 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

100E

MC10109FN

Onsemi

OR/NOR GATE

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

2

ECL

5

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

2.9 ns

Gates

1.27 mm

85 Cel

-30 Cel

Tin/Lead (Sn80Pb20)

QUAD

S-PQCC-J20

1

-5.72 V

4.57 mm

8.965 mm

Not Qualified

-4.68 V

15 mA

ASYMMETRICAL INPUTS

e0

8.965 mm

10K

MC10106P

Onsemi

NOR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

3

ECL

4

-5.2

-5.2

IN-LINE

DIP16,.3

2.9 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

23 mA

ASYMMETRICAL I/PS

e0

30

235

19.175 mm

10K

MC10109FNR2

Onsemi

OR/NOR GATE

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

2

ECL

5

TR

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

2.9 ns

Gates

1.27 mm

85 Cel

-30 Cel

Tin/Lead (Sn80Pb20)

QUAD

S-PQCC-J20

1

-5.72 V

4.57 mm

8.965 mm

Not Qualified

-4.68 V

15 mA

ASYMMETRICAL INPUTS

e0

8.965 mm

10K

MC10105P

Onsemi

OR/NOR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

3

ECL

3

-5.2

-5.2

IN-LINE

DIP16,.3

2.9 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

23 mA

ASYMMETRICAL I/PS

e0

30

235

19.175 mm

10K

MC10E104FNR2

Onsemi

AND/NAND GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

TR

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

46 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

10E

MC100E107FNR2

Onsemi

XOR/XNOR GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

TR

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

58 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

100E

MC10E101FN

Onsemi

OR/NOR GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

4

ECL

4

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

36 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

10E

MC74VHCT86ADR2

Onsemi

XOR GATE

OTHER

GULL WING

14

SOP

RECTANGULAR

PLASTIC/EPOXY

NO

YES

4

CMOS

2

TR

3.3

5

50 pF

SMALL OUTLINE

SOP14,.25

16.5 ns

8 Amp

Gates

1.27 mm

85 Cel

-55 Cel

TIN LEAD

DUAL

R-PDSO-G14

1

5.5 V

1.75 mm

3.9 mm

Not Qualified

2 V

e0

235

8.65 mm

AHCT/VHCT

MC10E112FNG

Onsemi

INVERTER/BUFFER

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

YES

4

ECL

1

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.75 ns

Other Logic ICs

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN

QUAD

S-PQCC-J28

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

NECL MODE: 0V VCC WITH VEE = -4.2V TO -5.7V

e3

260

11.505 mm

10E

MC10197P

Onsemi

BUFFER

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

6

ECL

1

-5.2

IN-LINE

DIP16,.3

5 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

54 mA

e0

235

19.175 mm

10K

MC10117FN

Onsemi

OR-AND/OR-AND-INVERT GATE

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

2

ECL

5

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

3.4 ns

Gates

1.27 mm

85 Cel

-30 Cel

QUAD

S-PQCC-J20

-5.72 V

4.57 mm

8.965 mm

Not Qualified

-4.68 V

29 mA

8.965 mm

10K

MC10103P

Onsemi

OR GATE

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

NO

4

ECL

2

-5.2

-5.2

IN-LINE

DIP16,.3

2.9 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-PDIP-T16

-5.72 V

4.44 mm

7.62 mm

Not Qualified

-4.68 V

29 mA

e0

30

235

19.175 mm

10K

MC10103FNR2

Onsemi

OR GATE

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

4

ECL

2

TR

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

2.9 ns

Gates

1.27 mm

85 Cel

-30 Cel

TIN LEAD

QUAD

S-PQCC-J20

1

-5.72 V

4.57 mm

8.965 mm

Not Qualified

-4.68 V

29 mA

e0

235

8.965 mm

10K

MC10E122FNR2G

Onsemi

BUFFER

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

9

ECL

1

TR

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.5 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN

QUAD

S-PQCC-J28

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

57 mA

NECL MODE: 0V VCC WITH VEE = -4.2V TO -5.7V

e3

260

11.505 mm

10E

MC10101L

Onsemi

INVERTER/BUFFER

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

NO

4

ECL

1

-5.2

-5.2

IN-LINE

DIP16,.3

2.9 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-GDIP-T16

-5.72 V

5.08 mm

7.62 mm

Not Qualified

-4.68 V

29 mA

e0

19.495 mm

10K

MC10195L

Onsemi

INVERTER

OTHER

THROUGH-HOLE

16

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

NO

6

ECL

1

-5.2

IN-LINE

DIP16,.3

5 ns

Gates

2.54 mm

85 Cel

-30 Cel

TIN LEAD

DUAL

R-GDIP-T16

-5.72 V

5.08 mm

7.62 mm

Not Qualified

-4.68 V

54 mA

e0

19.49 mm

10K

MC10189FNR2

Onsemi

INVERTER

OTHER

J BEND

20

QCCJ

SQUARE

PLASTIC/EPOXY

YES

6

ECL

1

6

TR

-5.2

-5.2

CHIP CARRIER

LDCC20,.4SQ

3.5 ns

Bus Driver/Transceivers

1.27 mm

85 Cel

OPEN-EMITTER

-30 Cel

TIN LEAD

QUAD

ENABLE LOW

S-PQCC-J20

1

-5.72 V

4.57 mm

8.965 mm

Not Qualified

INVERTED

-4.68 V

44 mA

e0

235

8.965 mm

10K

MC10E107FNR2

Onsemi

XOR/XNOR GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

5

ECL

2

TR

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.6 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

50 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

10E

MC10E122FNG

Onsemi

BUFFER

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

9

ECL

1

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.5 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN

QUAD

S-PQCC-J28

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

57 mA

NECL MODE: 0V VCC WITH VEE = -4.2V TO -5.7V

e3

260

11.505 mm

10E

MC100E404FNR2G

Onsemi

AND/NAND GATE

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

4

ECL

2

TR

5

-4.5

CHIP CARRIER

LDCC28,.5SQ

.725 ns

Gates

1.27 mm

85 Cel

0 Cel

TIN

QUAD

S-PQCC-J28

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

146 mA

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V

e3

260

11.505 mm

100E

MC10E122FNR2

Onsemi

BUFFER

OTHER

J BEND

28

QCCJ

SQUARE

PLASTIC/EPOXY

NO

YES

9

ECL

1

TR

5

-5.2

CHIP CARRIER

LDCC28,.5SQ

.5 ns

Gates

1.27 mm

85 Cel

OPEN-EMITTER

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

1

5.7 V

4.57 mm

11.505 mm

Not Qualified

4.2 V

57 mA

NECL MODE: 0V VCC WITH VEE = -4.2V TO -5.7V

e0

235

11.505 mm

10E

Logic Gates

Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.

Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.

Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.

Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.

Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.

Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.