Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
BUFFER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
TUBE |
4.5 |
2/6 |
50 pF |
IN-LINE |
DIP16,.3 |
130 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T16 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.04 mA |
CMOS-TTL LEVEL TRANSLATOR |
e4 |
19.305 mm |
HC |
||||||||||||
|
Onsemi |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
300 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin (Sn) |
DUAL |
R-PDIP-T14 |
18 V |
4.69 mm |
7.62 mm |
Not Qualified |
3 V |
e3 |
40 |
260 |
18.86 mm |
4000/14000/40000 |
||||||||||||||
Texas Instruments |
BUFFER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
30 ns |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
41 mA |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
TTL/H/L |
|||||||||||||||
National Semiconductor |
NOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
3.3/5 |
50 pF |
IN-LINE |
DIP14,.3 |
7 ns |
12 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
19.18 mm |
AC |
||||||||||||||||
|
Texas Instruments |
BUFFER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
TUBE |
10 |
5/15 |
50 pF |
IN-LINE |
DIP16,.3 |
140 ns |
18 Amp |
Gate |
2.54 mm |
125 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T16 |
15 V |
5.08 mm |
7.62 mm |
Not Qualified |
5 V |
.12 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
4000/14000/40000 |
|||||||||||
|
Texas Instruments |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
135 ns |
5.2 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.04 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HC/UH |
|||||||||||
|
Texas Instruments |
AND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
3 |
TTL |
3 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
13 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
3 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
ALS |
|||||||||||
|
Texas Instruments |
AND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
20 ns |
16 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
1 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
8.8 mA |
e4 |
NOT SPECIFIED |
260 |
19.305 mm |
LS |
||||||||||
|
Texas Instruments |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
3 |
CMOS |
1 |
TUBE |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
.03 mA |
DUAL COMPLEMENTARY PAIR PLUS INVERTER |
e4 |
19.305 mm |
4000/14000/40000 |
||||||||||||
|
Renesas Electronics |
OR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
4.5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
125 ns |
5.2 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
1 |
6 V |
5.06 mm |
7.62 mm |
Not Qualified |
2 V |
19.2 mm |
HC/UH |
||||||||||||||||
Texas Instruments |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
32 ns |
-8 Amp |
Gates |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
4.4 mA |
e0 |
19.56 mm |
LS |
|||||||||||||
|
Texas Instruments |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
11 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
3-STATE |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
4.2 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
ALS |
||||||||||
|
Toshiba |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
95 ns |
4 Amp |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDIP-T14 |
6 V |
Not Qualified |
2 V |
|||||||||||||||||||
Intersil |
OR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
.42 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
e0 |
|||||||||||||||||||||||||||
|
Texas Instruments |
AND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
7.5 ns |
16 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
57 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
S |
|||||||||||
National Semiconductor |
BUFFER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
6 |
TTL |
1 |
5 |
5 |
IN-LINE |
DIP14,.3 |
30 ns |
30 Amp |
Gates |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
41 mA |
e0 |
TTL/H/L |
||||||||||||||||
Texas Instruments |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
6 |
CMOS |
1 |
5 |
IN-LINE |
150 ns |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDIP-T14 |
15 V |
5.08 mm |
7.62 mm |
3 V |
19.18 mm |
CMOS |
||||||||||||||||||||||||
National Semiconductor |
XOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
30 ns |
4 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
19.215 mm |
HC/UH |
||||||||||||||||
Texas Instruments |
AND-OR-INVERT GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
2 |
TTL |
4 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
22 ns |
Gates |
2.54 mm |
70 Cel |
0 Cel |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
14 mA |
ANOTHER FUNCTION HAS 6 INPUT |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
TTL/H/L |
|||||||||||||||
National Semiconductor |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
YES |
NO |
4 |
CMOS |
MIL-STD-883 |
2 |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
840 ns |
.64 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
15 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
19.43 mm |
4000/14000/40000 |
|||||||||||||||||
Intersil |
NOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
NXP Semiconductors |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
6 |
CMOS |
1 |
5 |
50 pF |
IN-LINE |
180 ns |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
15 V |
4.2 mm |
7.62 mm |
Not Qualified |
3 V |
19.025 mm |
4000/14000/40000 |
|||||||||||||||||||||||
Texas Instruments |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
6 |
TTL |
MIL-M-38510 Class B |
1 |
TUBE |
5 |
15 pF |
IN-LINE |
23 ns |
40 Amp |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
5.5 V |
5.08 mm |
6.67 mm |
Not Qualified |
4.5 V |
51 mA |
IOL = 30MA @ VOL = 0.7V; IOH = 0.25MA @ VOH = 30V |
e0 |
19.56 mm |
TTL/H/L |
||||||||||||||
|
NXP Semiconductors |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
6.5 ns |
64 Amp |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
5.5 V |
4.2 mm |
7.62 mm |
Not Qualified |
4.5 V |
43 mA |
IOL = 64MA @ VOL = 0.5V; IOH = 0.25MA @ VOH = 12V |
e4 |
19.025 mm |
F/FAST |
||||||||||||
Texas Instruments |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
CMOS |
38535Q/M;38534H;883B |
2 |
TUBE |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
135 ns |
5.2 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.04 mA |
LG-MAX |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
19.94 mm |
HC/UH |
||||||||||
|
Texas Instruments |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
4 |
CMOS |
2 |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
450 ns |
.36 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
15 V |
5.08 mm |
6.35 mm |
Not Qualified |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
19.18 mm |
4000/14000/40000 |
|||||||||||||||
Renesas Electronics |
NAND GATE |
COMMERCIAL EXTENDED |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
2 |
TTL |
4 |
5 |
5 |
IN-LINE |
DIP14,.3 |
27 ns |
8 Amp |
Gates |
2.54 mm |
75 Cel |
-20 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.06 mm |
7.62 mm |
Not Qualified |
4.75 V |
7 mA |
e0 |
19.2 mm |
LS |
||||||||||||||||
|
Texas Instruments |
AND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
10 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
4 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
ALS |
|||||||||||
|
Texas Instruments |
NOR GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
4.5 ns |
20 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
20.1 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
AS |
|||||||||||
|
Texas Instruments |
AND/NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
1 |
CMOS |
8 |
TUBE |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
300 ns |
6.8 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
.03 mA |
e4 |
19.305 mm |
4000/14000/40000 |
|||||||||||||
|
Texas Instruments |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
50 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
.04 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HCT |
|||||||||||
|
Texas Instruments |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
36 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
6.35 mm |
Not Qualified |
4.5 V |
.04 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HCT |
|||||||||||
STMicroelectronics |
AND/NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC |
NO |
NO |
1 |
CMOS |
ESCC9000 |
8 |
5 |
5/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-XDIP-T14 |
20 V |
Not Qualified |
3 V |
|||||||||||||||||||||||
|
STMicroelectronics |
AND/NAND GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
1 |
CMOS |
8 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
20 V |
3.7 mm |
7.62 mm |
3 V |
19 mm |
4000/14000/40000 |
||||||||||||||||||||||||
|
STMicroelectronics |
AND/NAND GATE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
100k Rad(Si) |
CERAMIC, GLASS-SEALED |
NO |
NO |
1 |
CMOS |
8 |
IN-LINE |
DIP14,.3 |
2.54 mm |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
20 V |
3.7 mm |
7.62 mm |
3 V |
19 mm |
4000/14000/40000 |
||||||||||||||||||||||||
|
Texas Instruments |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
5 ns |
20 Amp |
Gates |
2.54 mm |
70 Cel |
3-STATE |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
26.3 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
AS |
||||||||||
|
Texas Instruments |
NOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
25 ns |
4 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
.02 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HCT |
|||||||||||
|
Texas Instruments |
NOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
25 ns |
4 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
.02 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HCT |
|||||||||||
Motorola |
NOR GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
5 |
5 |
IN-LINE |
DIP14,.3 |
15 ns |
Gates |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
e0 |
18.86 mm |
LS |
||||||||||||||||||
|
Texas Instruments |
XOR GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
30 ns |
16 Amp |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
10 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
LS |
||||||||||
Texas Instruments |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
2 |
TTL |
4 |
5 |
15 pF |
IN-LINE |
27 ns |
2.54 mm |
70 Cel |
0 Cel |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
7 mA |
19.305 mm |
LS |
||||||||||||||||||||||
|
Texas Instruments |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
2 |
CMOS |
4 |
TUBE |
5 |
5/15 |
50 pF |
IN-LINE |
SOP14,.25 |
250 ns |
6.8 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-CDIP-T14 |
1 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
.03 mA |
e4 |
NOT SPECIFIED |
260 |
8.65 mm |
4000/14000/40000 |
||||||||||
National Semiconductor |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
4 |
CMOS |
MIL-STD-883 Class C |
2 |
5/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
4000/14000/40000 |
||||||||||||||||||||||||
|
Texas Instruments |
INVERTER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
TUBE |
4.5 |
2/6 |
50 pF |
IN-LINE |
DIP16,.3 |
130 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T16 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.04 mA |
CMOS-TTL LEVEL TRANSLATOR |
e4 |
19.305 mm |
HC |
||||||||||||
|
NXP Semiconductors |
AND GATE |
AUTOMOTIVE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
.36 Amp |
Gates |
2.54 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
15 V |
4.2 mm |
7.62 mm |
Not Qualified |
3 V |
e4 |
19.025 mm |
4000/14000/40000 |
|||||||||||||||
|
Onsemi |
NOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
3 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin (Sn) |
DUAL |
R-PDIP-T14 |
6 V |
4.69 mm |
7.62 mm |
Not Qualified |
2 V |
e3 |
260 |
18.86 mm |
HC/UH |
||||||||||||||
|
Nte Electronics |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
4 |
TTL |
2 |
5 |
IN-LINE |
15 ns |
2.54 mm |
70 Cel |
0 Cel |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
4.75 V |
LENGTH MAX |
NOT SPECIFIED |
NOT SPECIFIED |
19.95 mm |
LS |
|||||||||||||||||||||
|
NXP Semiconductors |
NAND GATE |
AUTOMOTIVE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
BULK |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
135 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
6 V |
4.2 mm |
7.62 mm |
Not Qualified |
2 V |
e4 |
19.025 mm |
HC/UH |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.