Part | RoHS | Manufacturer | Logic IC Type | Temperature Grade | Terminal Form | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Schmitt Trigger | Surface Mount | No. of Functions | Technology | Screening Level | No. of Inputs | No. of Bits | Translation | Packing Method | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Load Capacitance (CL) | Package Style (Meter) | Package Equivalence Code | Propagation Delay (tpd) | Maximum I (ol) | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Minimum Operating Temperature | Terminal Finish | Terminal Position | Control Type | Minimum fmax | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Output Polarity | Minimum Supply Voltage (Vsup) | Maximum Power Supply Current (ICC) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Length | Family |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
National Semiconductor |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
TTL |
38535Q/M;38534H;883B |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
30 Amp |
Gates |
2.54 mm |
125 Cel |
OPEN-COLLECTOR |
-55 Cel |
TIN LEAD |
DUAL |
R-XDIP-T14 |
1 |
Not Qualified |
51 mA |
e0 |
40 |
260 |
|||||||||||||||||||
National Semiconductor |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
2 |
TTL |
4 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
30 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
7 mA |
e0 |
19.18 mm |
LS |
|||||||||||||||
Motorola |
OR/NOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
1 |
CMOS |
8 |
5 |
5 |
IN-LINE |
DIP14,.3 |
210 ns |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
6 V |
2 V |
e0 |
|||||||||||||||||||||||
Texas Instruments |
BUFFER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
30 ns |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
41 mA |
IOL = 40MA @ VOL = 0.7V; IOH = 0.25MA @ VOH = 30V |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
TTL/H/L |
||||||||||||||
Texas Instruments |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
6.5 ns |
64 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
33 mA |
IOH = 15MA @ VOH = 2V; IOL = 64MA @ VOL = 0.55V |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
F/FAST |
||||||||||||||
|
Texas Instruments |
NOR GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
15 ns |
16 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
1 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
5.4 mA |
e4 |
NOT SPECIFIED |
260 |
19.305 mm |
LS |
||||||||||
|
NXP Semiconductors |
OR GATE |
AUTOMOTIVE |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
135 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
6 V |
4.2 mm |
7.62 mm |
Not Qualified |
2 V |
e4 |
19.025 mm |
HC/UH |
||||||||||||||
National Semiconductor |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
MIL-STD-883 Class B (Modified) |
5/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
National Semiconductor |
OR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
CMOS |
MIL-STD-883 |
2 |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
350 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
15 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
e0 |
19.43 mm |
4000/14000/40000 |
||||||||||||||||
Texas Instruments |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
250 ns |
1.5 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
.15 mA |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
19.43 mm |
4000/14000/40000 |
||||||||||||
STMicroelectronics |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
4 |
CMOS |
2 |
5 |
3/15 |
50 pF |
IN-LINE |
DIP14,.3 |
380 ns |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
15 V |
Not Qualified |
3 V |
e0 |
4000/14000/40000 |
||||||||||||||||||||
Defense Logistics Agency |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
4 |
TTL |
2 |
5 |
IN-LINE |
5 ns |
125 Cel |
-55 Cel |
DUAL |
R-GDIP-T14 |
5.5 V |
Not Qualified |
4.5 V |
S |
|||||||||||||||||||||||||||||
National Semiconductor |
BUFFER |
INDUSTRIAL |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
5 |
2/6 |
50 pF |
IN-LINE |
DIP16,.3 |
20 ns |
4 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
WITH EXTENDED INPUT VOLTAGE |
e0 |
19.34 mm |
HC/UH |
|||||||||||||||
Texas Instruments |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
23 ns |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
51 mA |
IOL = 40MA @ VOL = 0.7V; IOH = 0.25MA @ VOH = 30V |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
7406 |
||||||||||||||
|
Texas Instruments |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
8 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
3 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
ALS |
|||||||||||
Texas Instruments |
NOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
2/6 |
IN-LINE |
DIP14,.3 |
115 ns |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HC/UH |
||||||||||||||||||
|
Texas Instruments |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
131 ns |
5.2 Amp |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.02 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HC/UH |
||||||||||
|
Texas Instruments |
OR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
125 ns |
5.2 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.02 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HC/UH |
|||||||||||
|
Texas Instruments |
OR GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
7 ns |
16 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
68 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
S |
|||||||||||
|
Toshiba |
INVERTER |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
6 |
CMOS |
1 |
5 |
IN-LINE |
340 ns |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
18 V |
4.45 mm |
7.62 mm |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
19.25 mm |
4000/14000/40000 |
||||||||||||||||||||||
Intersil |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
5/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
e0 |
|||||||||||||||||||||||||||||||
Rca Solid State |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
38535Q/M;38534H;883B |
5/15 |
IN-LINE |
DIP14,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Texas Instruments |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
NO |
4 |
CMOS |
38535Q/M;38534H;883B |
2 |
TUBE |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
250 ns |
1.5 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-CDIP-T14 |
18 V |
5.08 mm |
7.62 mm |
Not Qualified |
3 V |
.03 mA |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
19.56 mm |
4000/14000/40000 |
|||||||||||
Intersil |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
.42 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
e0 |
|||||||||||||||||||||||||||
|
STMicroelectronics |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
3 |
CMOS |
1 |
5 |
3/15 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
20 V |
5.1 mm |
7.62 mm |
Not Qualified |
3 V |
DUAL COMPLEMENTARY PAIR PLUS INVERTER |
e4 |
4000/14000/40000 |
|||||||||||||||||
|
NXP Semiconductors |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
.36 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
15 V |
4.2 mm |
7.62 mm |
Not Qualified |
3 V |
e4 |
19.025 mm |
4000/14000/40000 |
|||||||||||||||
NXP Semiconductors |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
3 |
CMOS |
3 |
5 |
50 pF |
IN-LINE |
135 ns |
2.54 mm |
85 Cel |
-40 Cel |
DUAL |
R-PDIP-T14 |
15 V |
4.2 mm |
7.62 mm |
Not Qualified |
3 V |
19.025 mm |
4000/14000/40000 |
|||||||||||||||||||||||
|
NXP Semiconductors |
AND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
3 |
CMOS |
3 |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
.36 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
15 V |
4.2 mm |
7.62 mm |
Not Qualified |
3 V |
e4 |
19.025 mm |
4000/14000/40000 |
|||||||||||||||
|
STMicroelectronics |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
29 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
5.5 V |
5.1 mm |
7.62 mm |
Not Qualified |
4.5 V |
e4 |
19.43 mm |
HCT |
||||||||||||||
Onsemi |
NOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
RAIL |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
250 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
18 V |
4.69 mm |
7.62 mm |
Not Qualified |
3 V |
e0 |
30 |
235 |
18.86 mm |
4000/14000/40000 |
||||||||||||||
|
Onsemi |
BUFFER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
RAIL |
5 |
5/15 |
50 pF |
IN-LINE |
DIP16,.3 |
140 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin (Sn) |
DUAL |
R-PDIP-T16 |
18 V |
4.44 mm |
7.62 mm |
Not Qualified |
3 V |
e3 |
19.175 mm |
4000/14000/40000 |
|||||||||||||||
Onsemi |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
4 |
CMOS |
2 |
RAIL |
5 |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
250 ns |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
18 V |
4.69 mm |
7.62 mm |
Not Qualified |
3 V |
e0 |
30 |
235 |
18.86 mm |
4000/14000/40000 |
||||||||||||||
Onsemi |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
6 |
CMOS |
1 |
3 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
110 ns |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn80Pb20) |
DUAL |
R-PDIP-T14 |
6 V |
4.69 mm |
7.62 mm |
Not Qualified |
2 V |
e0 |
30 |
235 |
18.86 mm |
HC/UH |
||||||||||||||
|
Texas Instruments |
INVERTER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
6 |
TTL |
1 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
22 ns |
16 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
60 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
7414 |
|||||||||||
|
Texas Instruments |
BUFFER |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
TTL |
1 |
5 |
IN-LINE |
DIP14,.3 |
30 ns |
40 Amp |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
45 mA |
e4 |
19.305 mm |
LS |
|||||||||||||||
Motorola |
AND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
5 |
5 |
IN-LINE |
DIP14,.3 |
20 ns |
Gates |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.75 V |
e0 |
18.86 mm |
LS |
||||||||||||||||||
|
Texas Instruments |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
3 |
TTL |
3 |
TUBE |
5 |
5 |
15 pF |
IN-LINE |
DIP14,.3 |
15 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
0 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDIP-T14 |
5.25 V |
5.08 mm |
6.35 mm |
Not Qualified |
4.75 V |
3.3 mA |
e4 |
19.3 mm |
LS |
|||||||||||||
|
Toshiba |
NAND GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
95 ns |
4 Amp |
Gates |
2.54 mm |
85 Cel |
OPEN-DRAIN |
-40 Cel |
DUAL |
R-PDIP-T14 |
6 V |
4.45 mm |
7.62 mm |
Not Qualified |
2 V |
NOT SPECIFIED |
NOT SPECIFIED |
19.25 mm |
HC/UH |
||||||||||||||
Texas Instruments |
NOR GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
4 |
MIL-STD-883 |
2 |
3 |
IN-LINE |
144 ns |
24 Amp |
2.54 mm |
125 Cel |
-55 Cel |
TIN LEAD |
DUAL |
R-GDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Qualified |
2 V |
e0 |
AC |
||||||||||||||||||||||
National Semiconductor |
NAND GATE |
COMMERCIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
TTL |
2 |
5 |
5 |
50 pF |
IN-LINE |
DIP14,.3 |
13 ns |
8 Amp |
Gates |
2.54 mm |
70 Cel |
OPEN-COLLECTOR |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
4.5 V |
3 mA |
e0 |
19.18 mm |
ALS |
||||||||||||||
Mitsubishi Electric |
NAND GATE |
COMMERCIAL EXTENDED |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
NO |
2 |
TTL |
4 |
5 |
5 |
IN-LINE |
DIP14,.3 |
27 ns |
8 Amp |
Gates |
2.54 mm |
75 Cel |
-20 Cel |
TIN LEAD |
DUAL |
R-PDIP-T14 |
5.25 V |
4.5 mm |
7.62 mm |
Not Qualified |
4.75 V |
7 mA |
e0 |
19 mm |
LS |
||||||||||||||||
|
Texas Instruments |
XOR GATE |
INDUSTRIAL |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
4 |
CMOS |
2 |
TUBE |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
125 ns |
5.2 Amp |
Gates |
2.54 mm |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.02 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HC/UH |
|||||||||||
Texas Instruments |
BUFFER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
NO |
6 |
CMOS |
38535Q/M;38534H;883B |
1 |
TUBE |
10 |
5/15 |
50 pF |
IN-LINE |
DIP16,.3 |
140 ns |
6.4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T16 |
15 V |
5.08 mm |
7.62 mm |
Not Qualified |
5 V |
.06 mA |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
19.05 mm |
4000/14000/40000 |
|||||||||||
Rca Solid State |
BUFFER |
MILITARY |
THROUGH-HOLE |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
38535Q/M;38534H;883B |
5/15 |
IN-LINE |
DIP16,.3 |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T16 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||
Intersil |
AND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
NO |
CMOS |
5/15 |
50 pF |
IN-LINE |
DIP14,.3 |
.36 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T14 |
e0 |
|||||||||||||||||||||||||||
Intersil |
NAND GATE |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
6 V |
2 V |
e0 |
||||||||||||||||||||||||
|
Texas Instruments |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
6 |
CMOS |
1 |
TUBE |
4.5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
130 ns |
5.2 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
DUAL |
R-PDIP-T14 |
6 V |
5.08 mm |
7.62 mm |
Not Qualified |
2 V |
.04 mA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
19.305 mm |
HC/UH |
|||||||||||
Intersil |
INVERTER |
MILITARY |
THROUGH-HOLE |
14 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
NO |
CMOS |
5 |
2/6 |
50 pF |
IN-LINE |
DIP14,.3 |
4 Amp |
Gates |
2.54 mm |
125 Cel |
-55 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T14 |
6 V |
2 V |
e0 |
Logic gates are electronic circuits that perform basic logical operations on one or more inputs to produce a single output. They are the building blocks of digital circuits and are used to implement digital logic functions, such as AND, OR, NOT, XOR, and NAND.
Logic gates are designed using various technologies, including transistor-transistor logic (TTL), complementary metal-oxide-semiconductor (CMOS), and field-programmable gate arrays (FPGAs). They can be classified into three main types based on their operation: combinational logic gates, sequential logic gates, and programmable logic gates.
Combinational logic gates are logic gates that produce an output based solely on the current input values. These gates include the AND gate, OR gate, NOT gate, XOR gate, and NAND gate. The output of a combinational logic gate depends on the input values and the logic function implemented by the gate.
Sequential logic gates are logic gates that have memory elements and can store information. These gates include the SR flip-flop, D flip-flop, JK flip-flop, and T flip-flop. The output of a sequential logic gate depends on the current input values and the previous state of the gate.
Programmable logic gates are logic gates that can be programmed to implement different logic functions. These gates include programmable logic arrays (PLAs), programmable array logic (PALs), and field-programmable gate arrays (FPGAs). Programmable logic gates can be reprogrammed to adapt to changing system requirements.
Logic gates are used in various applications, including digital signal processing, control systems, and memory systems. They are essential components of digital systems and can be found in many electronic devices, such as computers, mobile phones, and digital cameras.