DDR1 DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD48288236FF-E50-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		600 mA	8388608 words	2,4	COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD48288209FF-E50-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	33554432 words		COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit							2,4,8
UPD45D128164G5-C10-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	8388608 words	2,4,8	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	8MX16	8M	0 Cel		DUAL		R-PDSO-G66			125 MHz		Not Qualified	134217728 bit						.025 Amp	2,4,8		.8 ns
UPD48288209AFF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words		COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288218FF-EF25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	16777216 words	2,4,8	COMMON		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48576218FF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	872 mA	33554432 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.3 ns
UPD48288118AFF-E25-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.3 ns
UPD48288218FF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		840 mA	16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit
UPD45D128164G5-C75-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		270 mA	8388608 words	2,4,8	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66			133 MHz		Not Qualified	134217728 bit			e0			.01 Amp	2,4,8		.75 ns
UPD48288218FF-EF33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		840 mA	16777216 words	2,4,8	COMMON		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit
UPD48288218AFF-E33-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit
UPD48288118AFF-E24-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V		NOT SPECIFIED	NOT SPECIFIED		2,4,8	18.5 mm	.3 ns
UPD48288236AFF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8	COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48288209AFF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words		COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288218AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M		TIN BISMUTH	BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit			e6
UPD48288209FF-EF25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	33554432 words		COMMON		1.5,1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288236AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8	COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M		TIN BISMUTH	BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit			e6
UPD48288218FF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48576236FF-E24-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	891 mA	16777216 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX36	16M		TIN BISMUTH	BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e6			.055 Amp		18.5 mm	.3 ns
UPD48576236FF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	891 mA	16777216 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX36	16M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.3 ns
UPD45D128442G5-C12-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	33554432 words	2,4,8	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66			100 MHz		Not Qualified	134217728 bit			e0			.025 Amp	2,4,8		1 ns
UPD48288118AFF-E25-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.3 ns
UPD48288236AFF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8	COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit
UPD48576236FF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	731 mA	16777216 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX36	16M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.35 ns
UPD48288209AFF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words		COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit							2,4,8
UPD45D128842G5-C12-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	16777216 words	2,4,8	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66			100 MHz		Not Qualified	134217728 bit			e0			.025 Amp	2,4,8		1 ns
UPD48576218FF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	872 mA	33554432 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.3 ns
UPD48288109AFF-E33-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD45D128842G5-C10-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	16777216 words	2,4,8	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66			125 MHz		Not Qualified	134217728 bit			e0			.025 Amp	2,4,8		.8 ns
UPD48288209FF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		840 mA	33554432 words		COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288109AFF-E33-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48288236AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8	COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M		TIN BISMUTH	BOTTOM		R-PBGA-B144			533 MHz		Not Qualified	301989888 bit			e6
UPD48288218AFF-E18-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			533 MHz		Not Qualified	301989888 bit				NOT SPECIFIED	NOT SPECIFIED
UPD48576218FF-E18-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1078 mA	33554432 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.22 ns
UPD48288109AFF-E25-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		SEPARATE	1.8	1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	32MX9	32M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48288218FF-E50-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD48576209FF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	716 mA	67108864 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	64MX9	64M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.35 ns
UPD48288218AFF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			300 MHz		Not Qualified	301989888 bit
UPD48288218FF-E50-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD48576218FF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	1078 mA	33554432 words	2,4,8	COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.22 ns
UPD48288236FF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1030 mA	8388608 words	2,4	COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48288218FF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		970 mA	16777216 words	2,4,8	COMMON		1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit
UPD48288209AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		COMMON	1.8	1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm
UPD48288209AFF-E18-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words		COMMON		1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M			BOTTOM		R-PBGA-B144			533 MHz		Not Qualified	301989888 bit							2,4,8
UPD48288218FF-EF50-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		560 mA	16777216 words	2,4,8	COMMON		1.5,1.8,2.5	18	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	16MX18	16M			BOTTOM		R-PBGA-B144			200 MHz		Not Qualified	301989888 bit
UPD45D128442G5-C10-9LG	Renesas Electronics	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	33554432 words	2,4,8	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G66			125 MHz		Not Qualified	134217728 bit			e0			.025 Amp	2,4,8		.8 ns
UPD48288118AFF-E33-DW1	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.35 ns
UPD48288236AFF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8	COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144			400 MHz		Not Qualified	301989888 bit				NOT SPECIFIED	NOT SPECIFIED

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.