DDR1 DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
UPD48576209FF-E25-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	872 mA	67108864 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	64MX9	64M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.3 ns
UPD48288118AFF-E33-DW1-A	Renesas Electronics	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words			SEPARATE	1.8	1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	95 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V					2,4,8	18.5 mm	.35 ns
UPD48576209FF-E25-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	872 mA	67108864 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	64MX9	64M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.3 ns
K4H510438J-LCIB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm
K4H510838B-GCB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		340 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60				133 MHz		Not Qualified	536870912 bit						.005 Amp	2,4,8		.75 ns
K4H510438B-VLB3	Samsung	DDR1 DRAM	COMMERCIAL	54	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	DUAL		R-PDSO-G54	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H511638F-LLB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	380 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH			260	.005 Amp	2,4,8	22.22 mm	.7 ns
K4H560438E-GCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		240	.003 Amp	2,4,8	14 mm	.7 ns
K4H561638H-ZLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3			.004 Amp	2,4,8		.65 ns
K4H510438G-LLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		210 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.7 ns
K4H510438J-LICC0	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	190 mA	134217728 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	128MX4	128M	-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH			260	.005 Amp	2,4,8	22.22 mm	.65 ns
K4H511638D-KLB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			33554432 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		DUAL		R-PDSO-G66				133 MHz		Not Qualified	536870912 bit							2,4,8		.75 ns
K4X51323PC-7ECA	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	536870912 bit			e3			.0003 Amp	2,4,8,16		6 ns
K4D263238E-GC400	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words		YES		2.5		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	65 Cel		4MX32	4M	0 Cel		BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm		12 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						12 mm	.6 ns
K4D261638E-TC40	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	340 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.625 V	1.2 mm	250 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.07 Amp	2,4,8	22.22 mm	.6 ns
K4H510838B-GLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		430 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM		R-PBGA-B60				200 MHz		Not Qualified	536870912 bit						.005 Amp	2,4,8		.65 ns
K4H510438J-LPCCT	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		190 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel	3-STATE	128MX4	128M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.65 ns
K4H510838C-UCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.7 ns
K4H280438D-TCA0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	225 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.0025 Amp	2,4,8	22.22 mm	.8 ns
K4H280838F-UCB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX8	16M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	134217728 bit					260	.003 Amp	2,4,8		.75 ns
K4D261638E-TC2A0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.8		16	SMALL OUTLINE, THIN PROFILE			.65 mm	65 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66		2.9 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.7 V	AUTO/SELF REFRESH						22.22 mm	.6 ns
K4H561638F-TCAA	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0				2,4,8	22.22 mm	.75 ns
K4X56323PG-7GCA0	Samsung	DDR1 DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	8388608 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	111 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	2,4,8,16	13 mm	6 ns
K4H561638J-LCCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		290 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	268435456 bit			e6		260	.004 Amp	2,4,8		.65 ns
K4H560438D-TLB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX4	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH		30	240			22.22 mm	.7 ns
K4C89093AF-GCF60	Samsung	DDR1 DRAM	COMMERCIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		2.5		9	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		32MX9	32M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm		10 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					15.5 mm	.5 ns
K4X56163PI-FEC6T	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit			e1		260	.00001 Amp	2,4,8,16		5.5 ns
K4H1G0438M-TLA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	268435456 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	256MX4	256M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH			240	.008 Amp	2,4,8	22.22 mm	.75 ns
K4H510438G-LCB00	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		175 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.75 ns
K4H561638H-ULA2T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		280 mA	16777216 words	2,4,8		COMMON	2.3	2.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	268435456 bit			e3			.003 Amp	2,4,8		.75 ns
K4H561638J-LLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		270 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		DUAL		R-PDSO-G66				166 MHz		Not Qualified	268435456 bit						.003 Amp	2,4,8		.7 ns
K4H560438E-GLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit					240	.003 Amp	2,4,8		.7 ns
K4X1G163PC-FEC3T	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	67108864 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-25 Cel		BOTTOM		R-PBGA-B60				133 MHz		Not Qualified	1073741824 bit						.000025 Amp	2,4,8,16		6 ns
K4H560838C-TLA0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	265 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.8 ns
K4H510838J-LCLCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm
K4H560438E-TLA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	240 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.75 ns
K4H560438E-GLA2	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	133 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	14 mm	.75 ns
K4H511638J-BCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.65 ns
K4H511638G-LLB3T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		230 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.7 ns
K4H281638E-TLA20	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns
K4D261638E-TC330	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	65 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66		2.625 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH						22.22 mm	.6 ns
K4X51163PE-FGC3T	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		115 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			133 MHz		Not Qualified	536870912 bit			e1		260	.000015 Amp	2,4,8,16		6 ns
K4H280838B-TLA2T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		375 mA	16777216 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX8	16M	0 Cel		DUAL		R-PDSO-G66				133 MHz		Not Qualified	134217728 bit						.03 Amp	2,4,8		.75 ns
K4H280438F-UCA0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		240 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		DUAL		R-PDSO-G66	3			100 MHz		Not Qualified	134217728 bit					260	.003 Amp	2,4,8		.8 ns
K4D623238B-GL50	Samsung	DDR1 DRAM	COMMERCIAL	144	LFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	750 mA	2097152 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA144,12X12,32	DRAMs	.8 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	BOTTOM	1	S-PBGA-B144		2.625 V	1.4 mm	200 MHz	12 mm	Not Qualified	67108864 bit	2.375 V	AUTO/SELF REFRESH	e0			.065 Amp	2,4,8	12 mm	.7 ns
K4H641638N-LC000	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		4MX16	4M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		67108864 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.65 ns
K4H280438C-TCA20	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		315 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM		R-PBGA-B136	3			133 MHz		Not Qualified	134217728 bit					240	.004 Amp	2,4,8		.75 ns
K4H510438B-UCAA0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	0 Cel		DUAL	1	R-PDSO-G66	2	2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.