DDR1 DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4H561638F-GCC40	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		2.6		16	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0					14 mm	.65 ns
K4H510838F-LLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL		R-PDSO-G66	3			166 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.7 ns
K4H510438B-ZLB0	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel		BOTTOM		R-PBGA-B60	3			133 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.75 ns
K4H560438C-TLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	330 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.7 ns
K4C89363AF-GCF60	Samsung	DDR1 DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words		YES		2.5		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B144		2.625 V	1.2 mm		10.5 mm	Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0					15.5 mm	.5 ns
K4H560438E-ZCB30	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1		260	.003 Amp	2,4,8	14 mm	.7 ns
K4D62323HA-QC60	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	410 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	166 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0			.06 Amp	2,4,8	20 mm	.75 ns
K4H561638D-GCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	350 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.05 mm	166 MHz	8.1 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	15.1 mm	.7 ns
K4X56163PI-FGC6T	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		110 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	268435456 bit			e1		260	.00001 Amp	2,4,8,16		5.5 ns
K4H281638E-TLA00	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		8388608 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		8MX16	8M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.8 ns
K4D623237A-QC700	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	FLATPACK, THIN PROFILE			.65 mm	65 Cel		2MX32	2M	0 Cel		QUAD	1	R-PQFP-G100		3.465 V	1.2 mm		14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH		30	240			20 mm	6 ns
K4H560838E-NLB3	Samsung	DDR1 DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		2.7 V	1.2 mm	166 MHz	7.6 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	14 mm	.7 ns
K4H511638C-ZCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1		260	.005 Amp	2,4,8		.7 ns
K4H510838G-HLB30	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.7 ns
K4H510438J-LPB3T	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		180 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel	3-STATE	128MX4	128M	-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.7 ns
K4H510438G-LLB0T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		175 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.75 ns
K4H510438J-LCB0T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		160 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	536870912 bit			e3		260	.005 Amp	2,4,8		.75 ns
K4H560838H-UCCC0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL	1	R-PDSO-G66	2	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH				.004 Amp	2,4,8	22.22 mm	.65 ns
K4H510838F-LLCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		385 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.65 ns
K4H510438C-UCB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		325 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	536870912 bit			e6		260	.005 Amp	2,4,8		.75 ns
K4H560838H-ZCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	33554432 words	2,4,8		COMMON	2.6	2.6	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	268435456 bit			e1		260	.004 Amp	2,4,8
K4H560838E-TLA2T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	268435456 bit						.003 Amp	2,4,8		.75 ns
K4H510438M-TLB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.006 Amp	2,4,8	22.22 mm	.75 ns
K4H280438C-TLA00	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		255 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM		R-PBGA-B136	3			100 MHz		Not Qualified	134217728 bit					240	.0035 Amp	2,4,8		.8 ns
K4H510438B-ZLCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.6		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e1					12 mm	.65 ns
K4H510838J-LCIB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		64MX8	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm
K4H560838E-VCA20	Samsung	DDR1 DRAM	COMMERCIAL	54	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel		32MX8	32M	0 Cel		DUAL	1	R-PDSO-G54	2	2.7 V	1.2 mm		7.6 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH						14 mm	.75 ns
K4H510438D-UCB3TE0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		128MX4	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
K4H510838F-LPB30	Samsung	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		DUAL		R-PDSO-G66				166 MHz		Not Qualified	536870912 bit						.005 Amp	2,4,8		.7 ns
K4H1G0438M-TCB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		410 mA	268435456 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	256MX4	256M	0 Cel	TIN LEAD	DUAL		R-PDSO-G66				133 MHz		Not Qualified	1073741824 bit			e0			.006 Amp	2,4,8		.7 ns
K4X56323PG-8ECA0	Samsung	DDR1 DRAM	OTHER	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	8388608 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-25 Cel		BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	111 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	2,4,8,16	13 mm	6 ns
K4H1G0838M-TCB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	330 mA	134217728 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX8	128M	0 Cel		DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH			240	.008 Amp	2,4,8	22.22 mm	.7 ns
K4H510838B-TLB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX8	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	22.22 mm	.7 ns
K4H510838B-NCB00	Samsung	DDR1 DRAM	COMMERCIAL	54	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.4 mm	70 Cel		64MX8	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0					11.2 mm	.75 ns
K4H510838C-UCB3T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.005 Amp	2,4,8	22.22 mm	.7 ns
KM44L64331AT-G0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	165 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	125 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0			.025 Amp	2,4,8	22.22 mm	.8 ns
K4H280838E-TCA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0			.003 Amp	2,4,8	22.22 mm	.75 ns
K4H510838D-ZPB0	Samsung	DDR1 DRAM	AUTOMOTIVE	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		325 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			133 MHz		Not Qualified	536870912 bit			e3			.005 Amp	2,4,8		.75 ns
K4X51163PE-FGC6000	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-25 Cel		BOTTOM		R-PBGA-B60				166 MHz		Not Qualified	536870912 bit						.000015 Amp	2,4,8,16		5.5 ns
K4H560438E-ZLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	268435456 bit					260	.004 Amp	2,4,8		.65 ns
K4H510438J-LCLB3	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		4	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		128MX4	128M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm
K4H560438H-UCB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		250 mA	67108864 words	2,4,8		COMMON	2.3	2.3	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	268435456 bit			e6		260	.003 Amp	2,4,8		.75 ns
K4D263238D-QC40	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	4194304 words	2,4,8,FP	YES	COMMON	2.5	2.5	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9,25	DRAMs	.65 mm	65 Cel	3-STATE	4MX32	4M	0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		2.625 V	1.2 mm	250 MHz	14 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0			.07 Amp	2,4,8	20 mm	.6 ns
K4H511638B-TCC40	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	70 Cel		32MX16	32M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0					22.22 mm	.65 ns
K4H560438N-LCB0T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		85 mA	67108864 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX4	64M	0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	268435456 bit			e3		260	.003 Amp	2,4,8		.75 ns
K4H280438C-TCB3T	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		350 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M	0 Cel		BOTTOM		R-PBGA-B136	3			166 MHz		Not Qualified	134217728 bit					240	.004 Amp	2,4,8		.7 ns
K4H510438C-UCA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		325 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	128MX4	128M	0 Cel		DUAL		R-PDSO-G66	3			133 MHz		Not Qualified	536870912 bit					260	.005 Amp	2,4,8		.75 ns
KM48L32331AT-FZ0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		33554432 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		32MX8	32M	0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		268435456 bit	2.3 V	AUTO/SELF REFRESH						22.22 mm	.75 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.