DDR1 DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4X51163PC-LGC30	Samsung	DDR1 DRAM	OTHER	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	150 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-25 Cel		BOTTOM	1	R-PBGA-B60	1	1.95 V	1 mm	133 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH			.0003 Amp	2,4,8,16	11.5 mm	6 ns
K4H510838B-UCB30	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	390 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX8	64M		0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e6	260	.005 Amp	2,4,8	22.22 mm	.7 ns
K4H561638H-ULB3T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		330 mA	16777216 words	2,4,8		COMMON	2.3	2.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	268435456 bit			e3		.003 Amp	2,4,8		.7 ns
K4H510838J-BCLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX8	64M		0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		9 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH					12 mm
K4H280438E-TCA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	240 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX4	32M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.003 Amp	2,4,8	22.22 mm	.75 ns
K4H510838D-UPB3T	Samsung	DDR1 DRAM	AUTOMOTIVE	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	125 Cel	3-STATE	64MX8	64M		-40 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			166 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.7 ns
K4H511638C-UCCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		400 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit			e6	260	.005 Amp	2,4,8		.65 ns
K4H511638B-GCCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		450 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	Tin/Lead (Sn/Pb)	BOTTOM		R-PBGA-B60				200 MHz		Not Qualified	536870912 bit			e0		.005 Amp	2,4,8		.65 ns
K4H561638J-HCCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	16777216 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4H511638C-ULB0T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		345 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.75 ns
K4H510838G-LCCCT	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		240 mA	67108864 words	2,4,8		COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX8	64M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit			e6	260	.005 Amp	2,4,8		.65 ns
K4D623237A-QC70	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M		0 Cel	TIN LEAD	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	143 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0		.003 Amp	2,4,8	20 mm	6 ns
K4H510838F-HLB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		360 mA	67108864 words	2,4,8		COMMON	2.5	2.5	8	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4X51163PC-LECA	Samsung	DDR1 DRAM	OTHER	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	33554432 words	2,4,8,16		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M		-25 Cel		BOTTOM		R-PBGA-B60	1			111 MHz		Not Qualified	536870912 bit					.0003 Amp	2,4,8,16		6 ns
K4H510838B-GCA20	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX8	64M		0 Cel	TIN LEAD	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e0				12 mm	.75 ns
K4H560838E-TCB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	250 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.003 Amp	2,4,8	22.22 mm	.75 ns
K4H511638F-HCB3	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		380 mA	33554432 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B60	3			166 MHz		Not Qualified	536870912 bit			e1	260	.005 Amp	2,4,8		.7 ns
K4X51323PC-8ECA	Samsung	DDR1 DRAM	OTHER	90	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	16777216 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M		-25 Cel	MATTE TIN	BOTTOM		R-PBGA-B90	1			111 MHz		Not Qualified	536870912 bit			e3		.0003 Amp	2,4,8,16		6 ns
K4H511638D-ZLCC	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		400 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			200 MHz		Not Qualified	536870912 bit			e3		.005 Amp	2,4,8		.65 ns
K4H280438C-TCB00	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		315 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M		0 Cel		BOTTOM		R-PBGA-B136	3			133 MHz		Not Qualified	134217728 bit				240	.004 Amp	2,4,8		.75 ns
K4H280838C-TLA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	350 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.004 Amp	2,4,8	22.22 mm	.75 ns
K4H280838E-TLAA	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.003 Amp	2,4,8	22.22 mm	.75 ns
K4H560438B-TLA0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	320 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	64MX4	64M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	100 MHz	10.16 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.025 Amp	2,4,8	22.22 mm	.8 ns
K4H560838H-ULCCT	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		300 mA	33554432 words	2,4,8		COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			200 MHz		Not Qualified	268435456 bit			e3		.004 Amp	2,4,8		.65 ns
K4H280838D-TLB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	300 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.003 Amp	2,4,8	22.22 mm	.75 ns
K4H560838E-TLCC0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	310 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	268435456 bit	2.5 V	AUTO/SELF REFRESH	e0		.004 Amp	2,4,8	22.22 mm	.65 ns
K4H1G0438A-ULB0T	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		230 mA	268435456 words	2,4,8		COMMON	2.5	2.5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	256MX4	256M		0 Cel	MATTE TIN	DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	1073741824 bit			e3		.015 Amp	2,4,8		.75 ns
K4H561638F-ZLA2	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	16777216 words	2,4,8		COMMON	2.5	2.5	16	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M		0 Cel		BOTTOM		R-PBGA-B60	3			133 MHz		Not Qualified	268435456 bit				260	.003 Amp	2,4,8		.75 ns
K4C89363AF-GCG7	Samsung	DDR1 DRAM	COMMERCIAL	144	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	2,4	YES	COMMON	2.5	1.5/1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm	70 Cel	3-STATE	8MX36	8M	2.375 V	0 Cel	Tin/Lead (Sn/Pb)	BOTTOM	1	R-PBGA-B144		2.625 V		400 MHz		Not Qualified	301989888 bit	2.375 V	AUTO/SELF REFRESH	e0			2,4		.5 ns
K4H510438B-ZCB30	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		128MX4	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2	2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1				12 mm	.7 ns
K4H510438F-HLCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	385 mA	134217728 words	2,4,8	YES	COMMON	2.5	2.6	4	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	128MX4	128M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	200 MHz	9 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1	260	.005 Amp	2,4,8	12 mm	.65 ns
K4D62323HA-QC50	Samsung	DDR1 DRAM	COMMERCIAL	100	TQFP		RECTANGULAR	PLASTIC/EPOXY	BLOCK ORIENTED PROTOCOL	YES	1	CMOS	GULL WING	SYNCHRONOUS	450 mA	2097152 words	2,4,8,FP	YES	COMMON	3.3	2.5,3.3	32	FLATPACK, THIN PROFILE	TQFP100,.7X.9	DRAMs	.65 mm	65 Cel	3-STATE	2MX32	2M		0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	R-PQFP-G100		3.465 V	1.2 mm	200 MHz	14 mm	Not Qualified	67108864 bit	3.135 V	AUTO/SELF REFRESH	e0		.06 Amp	2,4,8	20 mm	.75 ns
K4D261638E-TC36	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	360 mA	8388608 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	65 Cel	3-STATE	8MX16	8M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.625 V	1.2 mm	275 MHz	10.16 mm	Not Qualified	134217728 bit	2.375 V	AUTO/SELF REFRESH	e0		.07 Amp	2,4,8	22.22 mm	.6 ns
K4X56323PI-7GC6	Samsung	DDR1 DRAM	OTHER	90	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		140 mA	8388608 words	2,4,8,16		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M		-25 Cel		BOTTOM		R-PBGA-B90				166 MHz		Not Qualified	268435456 bit					.00001 Amp	2,4,8,16		5.5 ns
K4H511638F-HCCC0	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	400 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	200 MHz	9 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1	260	.005 Amp	2,4,8	12 mm	.65 ns
K4H511638G-LCCC	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		255 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit			e6	260	.005 Amp	2,4,8		.65 ns
K4H511638G-LLCC0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		255 mA	33554432 words	2,4,8		COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G66	3			200 MHz		Not Qualified	536870912 bit			e6	260	.005 Amp	2,4,8		.65 ns
K4H511638C-UCCC0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	400 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX16	32M		0 Cel	TIN BISMUTH	DUAL	1	R-PDSO-G66	3	2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e6		.005 Amp	2,4,8	22.22 mm	.65 ns
K4H1G0838AULB0000	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		134217728 words		YES		2.5		8	SMALL OUTLINE, THIN PROFILE			.65 mm	70 Cel		128MX8	128M		0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	Not Qualified	1073741824 bit	2.3 V	AUTO/SELF REFRESH					22.22 mm	.75 ns
K4H560838E-ZCB30	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	280 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e1	260	.003 Amp	2,4,8	14 mm	.7 ns
K4H560438D-ZCB30	Samsung	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		2.5		4	GRID ARRAY, THIN PROFILE			1 mm	70 Cel		64MX4	64M		0 Cel		BOTTOM	1	R-PBGA-B60	3	2.7 V	1.2 mm		8 mm	Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH					14 mm	.7 ns
K4H510838B-NCC4	Samsung	DDR1 DRAM	COMMERCIAL	54	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING			67108864 words	2,4,8		COMMON	2.6	2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP54,.46,16	DRAMs	.4 mm	70 Cel	3-STATE	64MX8	64M		0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-PDSO-G54				200 MHz		Not Qualified	536870912 bit			e0		.005 Amp	2,4,8		.65 ns
K4H1G1638M-TLA2	Samsung	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	GULL WING		400 mA	67108864 words	2,4,8		COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.635 mm	70 Cel	3-STATE	64MX16	64M		0 Cel		DUAL		R-PDSO-G66	1			133 MHz		Not Qualified	1073741824 bit					.006 Amp	2,4,8		.75 ns
K4H280438C-TCA00	Samsung	DDR1 DRAM	COMMERCIAL	136	FBGA	4096	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		255 mA	33554432 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY, FINE PITCH	BGA136,12X17,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX4	32M		0 Cel		BOTTOM		R-PBGA-B136	3			100 MHz		Not Qualified	134217728 bit				240	.0035 Amp	2,4,8		.8 ns
K4H560438E-GLCCT	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	2,4,8		COMMON	2.6	2.6	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M		0 Cel		BOTTOM		R-PBGA-B60	3			200 MHz		Not Qualified	268435456 bit				240	.004 Amp	2,4,8		.65 ns
K4H510438J-BLB3T	Samsung	DDR1 DRAM	COMMERCIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		180 mA	134217728 words	2,4,8		COMMON	2.5	2.5	4	GRID ARRAY	BGA60,9X12,40/32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M		0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			166 MHz		Not Qualified	536870912 bit			e3	260	.005 Amp	2,4,8		.7 ns
K4H280838B-TCB0	Samsung	DDR1 DRAM	COMMERCIAL	66	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	375 mA	16777216 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	16MX8	16M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	2.3 V	AUTO/SELF REFRESH	e0		.03 Amp	2,4,8	22.22 mm	.75 ns
K4H560838D-NCA0	Samsung	DDR1 DRAM	COMMERCIAL	54	SOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	235 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE	TSSOP54,.36,20	DRAMs	.5 mm	70 Cel	3-STATE	32MX8	32M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		2.7 V		100 MHz		Not Qualified	268435456 bit	2.3 V	AUTO/SELF REFRESH	e0		.003 Amp	2,4,8		.8 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.