DDR2 DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT47H32M16CB-3LIT	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM		R-PBGA-B60				333 MHz		Not Qualified	536870912 bit						.005 Amp	4,8		.45 ns
MT47H128M16HG-37E:C	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		11.5 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.6 ns
MT47J256M4HQ-37E:E	Micron Technology	DDR2 DRAM		60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	268435456 words	4,8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.625 V	1.2 mm	267 MHz	8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1				4,8	11.5 mm	.6 ns
MT47H256M4HW-187EL:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0					12.5 mm	.3 ns
MT47H64M16B7-37E	Micron Technology	DDR2 DRAM		68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		330 mA	67108864 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B68				267 MHz		Not Qualified	1073741824 bit						.007 Amp	4,8		.5 ns
MT47H128M4CB-37EIT:B	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX4	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	266 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	12 mm	.5 ns
MT47H64M16B7-5E:D	Micron Technology	DDR2 DRAM	OTHER	84	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1 mm	200 MHz	10 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	16.5 mm	.6 ns
MT47H32M16HR-187EIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.35 ns
MT47H64M16HW-3ELAT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		64MX16	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0					12.5 mm	.45 ns
MT47H64M16HR-5ELAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	HBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.6 ns
MT47H128M4JN-37E:G	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX4	128M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					10 mm	.5 ns
MT47H32M16HR-25EAT:F	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M8JN-3:F	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.007 Amp	4,8	10 mm	.45 ns
MT47R128M8CF-25:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.55		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10 mm	.4 ns
MT47H128M4JN-37E:F	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	225 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX4	128M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	266 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.007 Amp	4,8	10 mm	.5 ns
MT47H64M16HQ-37EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	.45 ns
MT47H128M8HV-25EAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	335 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0				4,8	11.5 mm	.4 ns
MT47H64M4BP-3E:B	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX4	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.005 Amp	4,8	12 mm	.45 ns
MT47J256M4HR-37E:E	Micron Technology	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX4	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.625 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					12.5 mm
MT47H32M16FN-25IT:D	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY			.8 mm	85 Cel		32MX16	32M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					12.5 mm	.4 ns
MT47H16M16BG-5	Micron Technology	DDR2 DRAM	OTHER	84	LFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	230 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.3 mm	200 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1		260	.005 Amp	4,8	14 mm	.6 ns
MT47H32M16GC-25EAT:B	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		12 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.4 ns
MT47H64M16HW-5EIT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	200 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0			.007 Amp	4,8	12.5 mm	.6 ns
MT47H32M16BT-25IT:A	Micron Technology	DDR2 DRAM	INDUSTRIAL	92	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA92,9X21,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B92		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.005 Amp	4,8	19 mm	.4 ns
MT47H128M8CF-25EAT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.4 ns
MT47H256M4HQ-25:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	335 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	11.5 mm	.4 ns
MT47H128M4B6-25EL:B	Micron Technology	DDR2 DRAM	COMMERCIAL	60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B60	1			400 MHz		Not Qualified	536870912 bit			e3			.007 Amp	4,8		.4 ns
MT47H32M16HR-25LAT:G	Micron Technology	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M8F6-3EL:D	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	240 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	0 Cel	TIN LEAD SILVER	BOTTOM	1	S-PBGA-B60		1.9 V	1.2 mm	333 MHz	10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0			.007 Amp	4,8	10 mm	.45 ns
MT47J256M4HR-3E:E	Micron Technology	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX4	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.625 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1					12.5 mm
MT47H64M16HQ-187EIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	.3 ns
MT47H64M8CC-25EIT:B	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		12 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H128M16PK-37EIT:C	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e0					12.5 mm	.5 ns
MT47H128M4CC-25L	Micron Technology	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	128MX4	128M			BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	536870912 bit						.005 Amp	4,8		.4 ns
MT47H256M4CF-187EIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX4	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	3.5 ns
MT47H256M4HR-3E:E	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.45 ns
MT47H64M8CC-25EIT	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			67108864 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B84				400 MHz		Not Qualified	536870912 bit						.005 Amp	4,8		.4 ns
MT47H64M16HV-25EIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0					11.5 mm	.35 ns
MT47H128M8HQ-187ELAT:E	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	425 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	11.5 mm	.35 ns
MT47H32M16CC-37EL	Micron Technology	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	32MX16	32M		MATTE TIN	BOTTOM		R-PBGA-B84	1			267 MHz		Not Qualified	536870912 bit			e3			.007 Amp	4,8		.5 ns
MT47H128M4CF-25AT:F	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		128MX4	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT47H32M16GC-5EAT:B	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY			.8 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		12 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.6 ns
MT47H128M8CF-187ELAT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	250 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	3.5 ns
MT47H32M16HR-25ELAT:G	Micron Technology	DDR2 DRAM		84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			32MX16	32M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H128M8JN-3L:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e0				4,8	10 mm	.45 ns
MT47H64M8CF-3ELAT:F	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.45 ns
MT47H64M8JN-25ELAT:G	Micron Technology	DDR2 DRAM		60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX8	64M		TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					10 mm	.4 ns
MT47H64M8CF-25AT:F	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.