DDR2 DRAM DRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
SMG256M8U69AO8CJF-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH					4,8	11.5 mm
SGG256M4U91AO8ZCF-3	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	333.33 MHz	8 mm		1073741824 bit	1.7 V					.055 Amp	4,8	11.5 mm	.45 ns
SGG256M4U91AO8CCL-187E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	533.33 MHz	8 mm		1073741824 bit	1.7 V					.07 Amp	4,8	10 mm	.35 ns
EDE1108AFBG-6E-F	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						10.5 mm	.45 ns
SGG128M8U91AO8ZCF-37E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V					.045 Amp	4,8	11.5 mm	.5 ns
SGG256M4U91AO8ZCL-25	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	11.5 mm	.4 ns
EDE1108AFSE-8G-F	Micron Technology	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	134217728 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B60			400 MHz		Not Qualified	1073741824 bit							4,8		.4 ns
SGG64M16U91AO8ZLF-3	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	333.33 MHz	8 mm		1073741824 bit	1.7 V					.055 Amp	4,8	12.5 mm	.45 ns
MT18HTF51272AY-53EA1	Micron Technology	DDR2 DRAM	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4680 mA	536870912 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	512MX72	512M	0 Cel		DUAL		R-PDMA-N240			333 MHz		Not Qualified	38654705664 bit						.144 Amp
SGG128M8U91AO8ZCF-187E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	533.33 MHz	8 mm		1073741824 bit	1.7 V					.07 Amp	4,8	11.5 mm	.35 ns
EDBA164B1PM-1D-F-D	Micron Technology	DDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B220	1.3 V	.8 mm		14 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						14 mm
SGG64M16U91AO8ZLF-25	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	12.5 mm	.4 ns
SGG256M4U91AO8CCF-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	10 mm	.4 ns
SGG256M4U91AO8ZCL-37E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V					.045 Amp	4,8	11.5 mm	.5 ns
SGG256M4U91AO8ZCL-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	11.5 mm	.4 ns
SGG64M16U91AO8ZLL-25	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	12.5 mm	.4 ns
SGG256M4U91AO8CCF-37E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V					.045 Amp	4,8	10 mm	.5 ns
SGG256M4U91AO8ZCL-187E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	533.33 MHz	8 mm		1073741824 bit	1.7 V					.07 Amp	4,8	11.5 mm	.35 ns
SGG256M4U91AO8CCL-25	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	10 mm	.4 ns
EDE1104AFSE-8G-F	Micron Technology	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	268435456 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM		R-PBGA-B60			400 MHz		Not Qualified	1073741824 bit							4,8		.4 ns
EDE2104ABSE-8G-E	Micron Technology	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B68			400 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.4 ns
SGG128M8U91AO8ZCL-37E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V					.045 Amp	4,8	11.5 mm	.5 ns
EDE2104AASE-6E-E	Micron Technology	DDR2 DRAM		68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.12 mm		10.2 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					20.7 mm
EDE2108AASE-5C-E	Micron Technology	DDR2 DRAM		68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX8	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.12 mm		10.2 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					20.7 mm
SGG64M16U91AO8ZLF-187E	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	130 mA	67108864 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	533.33 MHz	8 mm		1073741824 bit	1.7 V					.07 Amp	4,8	12.5 mm	.35 ns
SGG256M4U91AO8CCF-25	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	10 mm	.4 ns
SGG256M4U91AO8ZCF-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	11.5 mm	.4 ns
SGG128M8U91AO8CCF-37E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V					.045 Amp	4,8	10 mm	.5 ns
EDE2104ABSE-5C-E	Micron Technology	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	536870912 words	4,8		COMMON	1.8	1.8	4	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B68			266 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.5 ns
SGG256M8U69AO8CJF-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH					4,8	11.5 mm
SGG128M8U91AO8ZCF-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	11.5 mm	.4 ns
EDBM164B1PD-1D-F	Micron Technology	DDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		201326592 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			192MX64	192M			BOTTOM	1	S-PBGA-B220	1.3 V	.85 mm		14 mm		12884901888 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			14 mm
EDE1116AGBG-6E-F	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH						12.5 mm	.45 ns
SGG128M8U91AO8CCF-3	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	333.33 MHz	8 mm		1073741824 bit	1.7 V					.055 Amp	4,8	10 mm	.45 ns
EDE2108AASE-8G-E	Micron Technology	DDR2 DRAM		68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX8	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.12 mm		10.2 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					20.7 mm
EDBA164B1PM-8D-F-D	Micron Technology	DDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B220	1.3 V	.8 mm		14 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						14 mm
EDB2432BCPE-8D-F	Micron Technology	DDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			64MX32	64M			BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		2147483648 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDE5116AHBG-6C-E	Micron Technology	DDR2 DRAM		84	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		240 mA	33554432 words	4,8		COMMON	1.8	1.8	16	GRID ARRAY, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm		3-STATE	32MX16	32M			BOTTOM		R-PBGA-B84			333 MHz		Not Qualified	536870912 bit						.01 Amp	4,8		.45 ns
SGG128M8U91AO8CCL-25	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	10 mm	.4 ns
EDE2108AASE-6E-E	Micron Technology	DDR2 DRAM		68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX8	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.12 mm		10.2 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					20.7 mm
EDE2108ABSE-5C-E	Micron Technology	DDR2 DRAM	OTHER	68	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	268435456 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA68,9X19,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B68			266 MHz		Not Qualified	2147483648 bit						.015 Amp	4,8		.5 ns
SGG256M4U91AO8ZCF-25	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	11.5 mm	.4 ns
SGG128M8U91AO8CCL-37E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	95 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	266.66 MHz	8 mm		1073741824 bit	1.7 V					.045 Amp	4,8	10 mm	.5 ns
SGG256M4U91AO8CCF-3	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	100 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	333.33 MHz	8 mm		1073741824 bit	1.7 V					.055 Amp	4,8	10 mm	.45 ns
EDE1108AFSE-6E-F	Micron Technology	DDR2 DRAM		60	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		275 mA	134217728 words	4,8		COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm		3-STATE	128MX8	128M			BOTTOM		R-PBGA-B60			333 MHz		Not Qualified	1073741824 bit							4,8		.45 ns
EDE2104AASE-8G-E	Micron Technology	DDR2 DRAM		68	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B68	1.9 V	1.12 mm		10.2 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					20.7 mm
EDBA164B1PM-8D-F-R	Micron Technology	DDR2 DRAM		220	VFBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			256MX64	256M			BOTTOM	1	S-PBGA-B220	1.3 V	.8 mm		14 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						14 mm
SGG256M4U91AO8CCL-25E	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	110 mA	268435456 words	4,8	YES	COMMON	1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V					.06 Amp	4,8	10 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.