DDR2 DRAM MODULE DRAM 75

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TS256MLQ64V8U	Transcend Information	DDR2 DRAM MODULE
SS1286SO264652MM	Smart Modular Technologies	DDR2 DRAM MODULE
MT18HVS25672PKZ-80EH1	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4			82 mm
M392T5660DZA-CF70	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.4 ns
M395T5663FB4-CE68	Samsung	DDR2 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4895 mA	268435456 words	YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N204	2	1.9 V	30.5 mm	333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		260		133.35 mm
M392T2863DZA-CCC0	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH					.6 ns
M395T5163FB4-CE68	Samsung	DDR2 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5255 mA	536870912 words	YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N204		1.9 V	30.5 mm	333 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH		260	2.82 Amp	133.35 mm	.45 ns
M392T5663DZA-CD50	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.5 ns
M393T6450GZ3-CD5	Samsung	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						64MX72	64M			DUAL	1	R-XDMA-N240	3	1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH		260			.5 ns
M392T5663DZA-CCC0	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.6 ns
M392T5663DZA-CF70	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.4 ns
M392T2863DZA-CD50	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH					.5 ns
M395T2863FB4-CE68	Samsung	DDR2 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4715 mA	134217728 words	YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	1	R-XDMA-N204		1.9 V	30.5 mm	333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH		260	2.28 Amp	133.35 mm
M470T5663RZ3-CF7	Samsung	DDR2 DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V		400 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH		260	.24 Amp		.4 ns
M393T6450GZ3-CCC	Samsung	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						64MX72	64M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	4831838208 bit	1.7 V	AUTO/SELF REFRESH					.6 ns
M392T5663DZA-CE60	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.45 ns
M378T2863CZS-CE6	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2240 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		260			.45 ns
M395T5160FB4-CE68	Samsung	DDR2 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6112 mA	536870912 words	YES	COMMON	1.8	1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N204	2	1.9 V	30.5 mm			Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH		260		133.35 mm
M393T3253GZ3-CCC	Samsung	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						32MX72	32M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH					.6 ns
M392T5660DZA-CE60	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.45 ns
M393T5663DZA-CF7	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3820 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		260			.4 ns
M393T5663DZA-CE6	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3435 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		260			.45 ns
M378T2863CZS-CD5	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2080 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		267 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		260			.45 ns
M470T2863RZ3-CE6	Samsung	DDR2 DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2120 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V		333 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		260			.45 ns
M392T5660DZA-CCC0	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.6 ns
M393T5660DZA-CF7	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5530 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		400 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		260	.27 Amp		.4 ns
M395T1K66AZ4-CE56	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	77309411328 bit	1.7 V	AUTO/SELF REFRESH
M392T2863DZA-CE60	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH					.45 ns
M393T5160DZA-CF7	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	7110 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V		400 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH		260	.54 Amp		.4 ns
M393T3253GZ3-CD5	Samsung	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		33554432 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						32MX72	32M			DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	2415919104 bit	1.7 V	AUTO/SELF REFRESH					.5 ns
M470T2863RZ3-CF7	Samsung	DDR2 DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2280 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V		400 MHz		Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH		260			.45 ns
M393T5660DZA-CE6	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	5010 mA	268435456 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH		260	.27 Amp		.45 ns
M392T5660DZA-CD50	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH					.5 ns
M392T2863DZA-CF70	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				95 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH					.4 ns
M470T5663RZ3-CE6	Samsung	DDR2 DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2400 mA	268435456 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel		DUAL	1	R-XDMA-N200	3	1.9 V		333 MHz		Not Qualified	17179869184 bit	1.7 V	AUTO/SELF REFRESH		260	.24 Amp		.4 ns
M393T5160DZA-CE6	Samsung	DDR2 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	6400 mA	536870912 words	YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	3	1.9 V		333 MHz		Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH		260	.54 Amp		.45 ns
MT36HTF51272FDY-667XX	Micron Technology	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						512MX72	512M		GOLD	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			133.35 mm
MT9HTF12872AZY-80EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
MT18HVS25672PKZ-800XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4			82 mm
MT18HVS25672PKZ-80EM1	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N244		1.9 V	18.3 mm		3.8 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX				82 mm
MT18HTF51272AY-40ED4	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4500 mA	536870912 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	512MX72	512M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	38654705664 bit					.144 Amp
MT36HTF51272FDY-667E1D6	Micron Technology	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						512MX72	512M			DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH				133.35 mm
MT18HVS51272PKIZ-667XX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	38654705664 bit	1.7 V	AUTO REFRESH	e4			82 mm
MT36HTF51272FDY-80EXX	Micron Technology	DDR2 DRAM MODULE		240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY						512MX72	512M		GOLD	DUAL	1	R-XDMA-N240		1.9 V	5.1 mm		30.35 mm	Not Qualified	38654705664 bit	1.7 V	AUTO/SELF REFRESH	e4			133.35 mm
MT9HTF12872AZY-667XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
MT18HVS51272PKZ-667XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	38654705664 bit	1.7 V	AUTO REFRESH	e4			82 mm
MT18HVS25672PKIZ-800XX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4			82 mm
MT18HVS25672PKZ-80EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4			82 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.