DDR2 DRAM MODULE DRAM 75

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Length	Maximum Access Time
MT18HVS25672PKZ-667XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4	82 mm
MT18HVS51272PKZ-800XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm		18.2 mm	Not Qualified	38654705664 bit	1.7 V	AUTO REFRESH	e4	82 mm
MT9HTF12872AZY-800XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240	1.9 V				Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH
MT18HTF51272AY-80ED4	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			536870912 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	512MX72	512M	0 Cel		DUAL		R-PDMA-N240			400 MHz		Not Qualified	38654705664 bit
MT18HVS25672PKIZ-667XX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4	82 mm
MT18HVS25672PKIZ-80EXX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words			1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4	82 mm
MT18HVS51272PKIZ-800XX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words			1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	GOLD	DUAL	1	R-XDMA-N244	1.9 V	3.8 mm		18.2 mm	Not Qualified	38654705664 bit	1.7 V	AUTO REFRESH	e4	82 mm
MT18HTF51272AY-800D4	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			536870912 words		COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	55 Cel	3-STATE	512MX72	512M	0 Cel		DUAL		R-PDMA-N240			400 MHz		Not Qualified	38654705664 bit
MT8HTF6464HDZ-800XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF12864AZ-667XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240					Not Qualified	8589934592 bit		AUTO/SELF REFRESH
MT8HTF12864HDZ-53EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HDZ-40EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HTZ-800XX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HDZ-80EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF12864HDZ-80EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HTZ-53EXX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF12864HDZ-40EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HTZ-667XX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF12864AZ-800H1	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	134217728 words	YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	Gold (Au)	DUAL	1	R-XDMA-N240			400 MHz		Not Qualified	8589934592 bit		AUTO/SELF REFRESH	e4		.4 ns
MT8HTF12864AZ-1GAXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240					Not Qualified	8589934592 bit		AUTO/SELF REFRESH
MT8HTF12864AZ-80EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240					Not Qualified	8589934592 bit		AUTO/SELF REFRESH
MT8HTF6464HTZ-80EXX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HDZ-667XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF12864AZ-800XX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240					Not Qualified	8589934592 bit		AUTO/SELF REFRESH
MT8HTF12864HDZ-800X	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	8589934592 bit	1.7 V	AUTO/SELF REFRESH	e4
MT8HTF6464HTZ-40EXX	Micron Technology	DDR2 DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				85 Cel		64MX64	64M	-40 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH
MT8HTF6464HDZ-53EXX	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words	YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel		DUAL	1	R-XDMA-N200	1.9 V				Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.