DDR3 DRAM DRAM 2,068

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4B2G0846E-MCH9	Samsung	DDR3 DRAM
K4J10324KE-HC7A	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		800 mA	33554432 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B136				1300 MHz		Not Qualified	1073741824 bit					260	.11 Amp	4,8		.18 ns
K4B2G1646Q-BCH9T	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		193 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	2147483648 bit						.011 Amp	8		.255 ns
K4B4G1646B-HCNBT	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			268435456 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M	0 Cel		BOTTOM		R-PBGA-B96				1066 MHz		Not Qualified	4294967296 bit							8		.18 ns
K4B2G0846B-HCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		230 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78	3			533 MHz		Not Qualified	2147483648 bit			e1		260	.012 Amp	8		.3 ns
K4B2G0446C-HCK0	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		205 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78	3			800 MHz		Not Qualified	2147483648 bit			e1		260	.012 Amp	8
K4B2G0446C-HCF7	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78	3			400 MHz		Not Qualified	2147483648 bit			e1		260		8
K4J52324QC-SC140	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm
K4B2G0846A	Samsung	DDR3 DRAM
K4B2G1646E-BIH9T	Samsung	DDR3 DRAM	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		158 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	95 Cel	3-STATE	128MX16	128M	-40 Cel		BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	2147483648 bit						.01 Amp	8		.255 ns
K4B2G1646Q-BCNBT	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				1066 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.18 ns
K4J52324KI-HC7A0	Samsung	DDR3 DRAM		136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.8		1	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			512MX1	512M			BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		10 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm	.18 ns
K4W1G1646D-EJ11	Samsung	DDR3 DRAM	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	540 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B100	3	1.9 V	1.2 mm	900 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	13.3 mm
K4B8G0846D-MCK00	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH						11 mm
M392B5773CH0	Samsung	DDR3 DRAM
K4J52324QC-AC200	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm	.35 ns
K4B8G1646Q-MCK0	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		251 mA		8		COMMON	1.5	1.5		GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE			0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM		R-PBGA-B96	3			800 MHz		Not Qualified	8589934592 bit			e1	30	260	.03 Amp	8		.225 ns
K4W1G1646E-HC11	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B96				900 MHz		Not Qualified	1073741824 bit					260	.01 Amp	4,8		.195 ns
K4B2G1646C-HCF8T	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				533 MHz		Not Qualified	2147483648 bit					260	.012 Amp	4,8		.3 ns
K4W1G1646E-HC12	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		290 mA	67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B96				800 MHz		Not Qualified	1073741824 bit					260	.01 Amp	4,8		.225 ns
K4B2G0446E-MCF80	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		210 mA	536870912 words			COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	2147483648 bit			e1		260	.02 Amp			.3 ns
K4B4G0846B-HCF8	Samsung	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		10 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B2G0846C-HCF7	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78	3			400 MHz		Not Qualified	2147483648 bit			e1		260		8
K4B4G0846B-HCK0T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		175 mA	536870912 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78				800 MHz		Not Qualified	4294967296 bit						.015 Amp	8		.225 ns
K4B4G0446E-BCK00	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4W1G1646E-HC1A	Samsung	DDR3 DRAM		96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		310 mA	67108864 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM		R-PBGA-B96				1000 MHz		Not Qualified	1073741824 bit					260	.01 Amp	4,8		.18 ns
K4B2G0446E-BCMA	Samsung	DDR3 DRAM
K4B2G1646E-BCMAT	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		189 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				933 MHz		Not Qualified	2147483648 bit						.01 Amp	8		.195 ns
K4B2G0846C-HYH90	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH		4		.8 mm	95 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4J52324QC-AC160	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel		BOTTOM	1	R-PBGA-B136		1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH						14 mm	.29 ns
K4B4G1646B-HCH9T	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		192 mA	268435456 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M	0 Cel		BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	4294967296 bit						.015 Amp	8		.255 ns
K4B4G0446B-HCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	1073741824 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	4294967296 bit						.015 Amp	8		.3 ns
M392B2G70AM0	Samsung	DDR3 DRAM
M393B2K70BM1	Samsung	DDR3 DRAM
K4B4G0446C-BCH90	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	200 mA	1073741824 words	4,8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	8.5 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH				.014 Amp	4,8	11 mm	.255 ns
K4W1G1646G-BC150	Samsung	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH						13.3 mm	20 ns
K4B2G0446C-HCF80	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	160 mA	536870912 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	533 MHz	7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1		260	.012 Amp	8	11 mm	.3 ns
K4B2G0446B-HCK0T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		300 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78				800 MHz		Not Qualified	2147483648 bit					260	.012 Amp	8		.225 ns
K4B2G0446B-HCF80	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	210 mA	536870912 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	533 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1		260	.012 Amp	8	11.5 mm	.3 ns
K4B2G1646Q-BCMAT	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		238 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				933 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.195 ns
K4W1G1646D-EJ12	Samsung	DDR3 DRAM	OTHER	100	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	490 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA100,11X16,32		DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B100	3	1.9 V	1.2 mm	800 MHz	9 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH			260	.015 Amp	4,8	13.3 mm
M471B2873FHS	Samsung	DDR3 DRAM
M392B5673FH0	Samsung	DDR3 DRAM
M392B1K70CM0	Samsung	DDR3 DRAM
K4B4G1646D-BCK00	Samsung	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words				1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY		NOT SPECIFIED	NOT SPECIFIED			13.3 mm	.225 ns
K4B2G0846E-MCF8	Samsung	DDR3 DRAM																																			3											260
K4B2G0446B-HCH9T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78	3			667 MHz		Not Qualified	2147483648 bit			e1		260	.012 Amp	8		.255 ns
K4B4G1646D-BCNB0	Samsung	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words				1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY		NOT SPECIFIED	NOT SPECIFIED			13.3 mm	.18 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.