DDR3 DRAM DRAM 2,068

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4B4G0846D-BCK00	Samsung	DDR3 DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B4G0846C-BCH9T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		200 mA	536870912 words	4,8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78				667 MHz		Not Qualified	4294967296 bit						.014 Amp	4,8		.255 ns
K4B2G0446D-HCF80	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		105 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.3 ns
K4B4G0446B-MCF8	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		250 mA	1073741824 words			COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	1GX4	1G	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B78	1			533 MHz		Not Qualified	4294967296 bit			e3			.024 Amp
K4W2G1646E-BC12	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		176 mA	134217728 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				800 MHz		Not Qualified	2147483648 bit						.01 Amp	4,8		.225 ns
K4B2G0846B-HCK0T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78				800 MHz		Not Qualified	2147483648 bit					260	.012 Amp	8		.225 ns
M392B2G73AM0	Samsung	DDR3 DRAM
M378B2873FH0	Samsung	DDR3 DRAM
K4W1G1646E-HC110	Samsung	DDR3 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words	4,8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	95 Cel	3-STATE	64MX16	64M	0 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	900 MHz	7.5 mm	Not Qualified	1073741824 bit	1.425 V	AUTO/SELF REFRESH			260		4,8	13.3 mm	.195 ns
K4B2G1646B-HCK0T	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B96				800 MHz		Not Qualified	2147483648 bit			e1		260		8		.225 ns
M378B5673FH0	Samsung	DDR3 DRAM
K4B2G1646Q-BIK0	Samsung	DDR3 DRAM	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		219 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel		BOTTOM		R-PBGA-B96				800 MHz		Not Qualified	2147483648 bit						.011 Amp	8		.225 ns
K4B2G0846D-HCMA	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		145 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78				933 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.195 ns
K4B2G1646F-BCNB0	Samsung	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		128MX16	128M	0 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						13.3 mm
K4B2G1646C-HIH9	Samsung	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			128MX16	128M			BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13.3 mm
K4B2G0446D-HCMA0	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	536870912 words	8		COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM		R-PBGA-B78				933 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.195 ns
K4J52324QC-BJ11	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		1300 mA	16777216 words	4,8		COMMON	2	2	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B136	1			909 MHz		Not Qualified	536870912 bit			e3			.14 Amp	4,8		.22 ns
K4B2G0446E-BCH90	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	125 mA	536870912 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH				.012 Amp	8	11 mm	.255 ns
K4B2G1646C-HCF8	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		220 mA	134217728 words	4,8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel		BOTTOM		R-PBGA-B96				533 MHz		Not Qualified	2147483648 bit					260	.012 Amp	4,8		.3 ns
K4B2G1646C-HPH9	Samsung	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm			128MX16	128M			BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						13.3 mm
K4B2G0446C-HYK00	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	95 Cel		512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B4G0846B-MCH9	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words			COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B78	1			667 MHz		Not Qualified	4294967296 bit			e3			.024 Amp
K4B4G1646B-HCH90	Samsung	DDR3 DRAM	OTHER	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		192 mA	268435456 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M	0 Cel		BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	4294967296 bit						.015 Amp	8		.255 ns
K4B4G0846B-MCH9T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		320 mA	536870912 words			COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B78	1			667 MHz		Not Qualified	4294967296 bit			e3			.024 Amp
K4B4G1646D-BCMA0	Samsung	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words				1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		7.5 mm		4294967296 bit	1.425 V	PROGRAMMABLE CAS LATENCY		NOT SPECIFIED	NOT SPECIFIED			13.3 mm	.195 ns
K4B4G0446Q-HCK00	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		10 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B8G0446D-MCK00	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		YES		1.5		4	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B2G1646Q-BIH9T	Samsung	DDR3 DRAM	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		193 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel		BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	2147483648 bit						.011 Amp	8		.255 ns
K4B2G0846F-BCNB0	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B2G0846Q-BCMA0	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm
M392B5273CH0	Samsung	DDR3 DRAM
K4B2G0846D-HCH9T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		135 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78				667 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.255 ns
M471B5273CH0	Samsung	DDR3 DRAM
K4B2G0446E-MCH9	Samsung	DDR3 DRAM																																			3											260
K4J10324KE-HC08	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		760 mA	33554432 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B136				1200 MHz		Not Qualified	1073741824 bit					260	.105 Amp	4,8		.19 ns
K4B2G0446B-HCH90	Samsung	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	260 mA	536870912 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1		260	.012 Amp	8	11.5 mm	.25 ns
K4B4G0846B-MCF8	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		270 mA	536870912 words			COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B78	1			533 MHz		Not Qualified	4294967296 bit			e3			.024 Amp
K4B2G0446E-MCH90	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		260 mA	536870912 words			COMMON	1.5	1.5	4	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B78				667 MHz		Not Qualified	2147483648 bit			e1		260	.02 Amp			.255 ns
K4B2G0846D-HCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		105 mA	268435456 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	2147483648 bit						.012 Amp	8		.3 ns
M393B2873FH0	Samsung	DDR3 DRAM
K4J10324KE-HC14	Samsung	DDR3 DRAM	OTHER	136	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		580 mA	33554432 words	4,8		COMMON	1.8	1.8	32	GRID ARRAY, FINE PITCH	BGA136,12X17,32		DRAMs	.8 mm	85 Cel	3-STATE	32MX32	32M	0 Cel		BOTTOM		R-PBGA-B136				700 MHz		Not Qualified	1073741824 bit					260	.09 Amp	4,8		.26 ns
K4B2G0846Q-BCNB0	Samsung	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.5		8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		256MX8	256M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		7.5 mm		2147483648 bit	1.425 V	AUTO/SELF REFRESH						11 mm
K4B4G0846B-MCF7	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		245 mA	536870912 words			COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B78	1			400 MHz		Not Qualified	4294967296 bit			e3			.024 Amp
M471B2873EH1	Samsung	DDR3 DRAM
K4B2G0846E-MCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		215 mA	268435456 words			COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	2147483648 bit						.02 Amp			.3 ns
K4B2G1646E-BPH90	Samsung	DDR3 DRAM	INDUSTRIAL	96	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		158 mA	134217728 words	8		COMMON	1.5	1.5	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32		DRAMs	.8 mm	95 Cel	3-STATE	128MX16	128M	-40 Cel		BOTTOM		R-PBGA-B96				667 MHz		Not Qualified	2147483648 bit						.01 Amp	8		.255 ns
K4J52324QC-BC140	Samsung	DDR3 DRAM	COMMERCIAL EXTENDED	136	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B136	2	1.9 V	1.2 mm		11 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.26 ns
K4B4G0846B-HCF8T	Samsung	DDR3 DRAM	OTHER	78	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL		130 mA	536870912 words	8		COMMON	1.5	1.5	8	GRID ARRAY, FINE PITCH	BGA78,9X13,32		DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel		BOTTOM		R-PBGA-B78				533 MHz		Not Qualified	4294967296 bit						.015 Amp	8		.3 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.