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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4B2G1646C-HIH9 |
| Description | DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm; Memory Density: 2147483648 bit; |
| Datasheet | K4B2G1646C-HIH9 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 128MX16 |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | MULTI BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 1.425 V |
| Surface Mount: | YES |
| No. of Terminals: | 96 |
| No. of Words: | 134217728 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B96 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Package Code: | TFBGA |
| Width: | 7.5 mm |
| No. of Ports: | 1 |
| Memory Density: | 2147483648 bit |
| Self Refresh: | YES |
| Memory IC Type: | DDR3 DRAM |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Length: | 13.3 mm |
| No. of Words Code: | 128M |
| Nominal Supply Voltage / Vsup (V): | 1.5 |
| Additional Features: | AUTO/SELF REFRESH |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Terminal Pitch: | .8 mm |
| Maximum Supply Voltage (Vsup): | 1.575 V |
