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Manufacturer | Micron Technology |
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Manufacturer's Part Number | MT47H32M16NF-25EAIT:H |
Description | DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
Datasheet | MT47H32M16NF-25EAIT:H Datasheet |
In Stock | 550 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Standby Current: | .01 Amp |
Organization: | 32MX16 |
Output Characteristics: | 3-STATE |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Maximum Seated Height: | 1.2 mm |
Access Mode: | FOUR BANK PAGE BURST |
Minimum Supply Voltage (Vsup): | 1.7 V |
Surface Mount: | YES |
Maximum Supply Current: | 215 mA |
No. of Terminals: | 84 |
Maximum Clock Frequency (fCLK): | 400 MHz |
No. of Words: | 33554432 words |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
Screening Level: | AEC-Q100 |
Technology: | CMOS |
JESD-30 Code: | R-PBGA-B84 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | SYNCHRONOUS |
Maximum Operating Temperature: | 85 Cel |
Package Code: | TFBGA |
Width: | 8 mm |
Input/Output Type: | COMMON |
No. of Ports: | 1 |
Memory Density: | 536870912 bit |
Self Refresh: | YES |
Sequential Burst Length: | 4,8 |
Memory IC Type: | DDR2 DRAM |
Minimum Operating Temperature: | -40 Cel |
Memory Width: | 16 |
No. of Functions: | 1 |
Package Equivalence Code: | BGA84,9X15,32 |
Refresh Cycles: | 8192 |
Interleaved Burst Length: | 4,8 |
Length: | 12.5 mm |
No. of Words Code: | 32M |
Nominal Supply Voltage / Vsup (V): | 1.8 |
Additional Features: | AUTO/SELF REFRESH |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Terminal Pitch: | .8 mm |
Temperature Grade: | INDUSTRIAL |
Maximum Supply Voltage (Vsup): | 1.9 V |