Samsung - K4B2G0846D-HCH9

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K4B2G0846D-HCH9 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number K4B2G0846D-HCH9
Description DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet K4B2G0846D-HCH9 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Standby Current: .012 Amp
Organization: 256MX8
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 135 mA
No. of Terminals: 78
Maximum Clock Frequency (fCLK): 667 MHz
No. of Words: 268435456 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B78
Package Shape: RECTANGULAR
Terminal Form: BALL
Maximum Operating Temperature: 85 Cel
Package Code: FBGA
Input/Output Type: COMMON
Memory Density: 2147483648 bit
Sequential Burst Length: 8
Memory IC Type: DDR3 DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 8
Qualification: Not Qualified
Package Equivalence Code: BGA78,9X13,32
Refresh Cycles: 8192
Interleaved Burst Length: 8
Maximum Access Time: .255 ns
No. of Words Code: 256M
Nominal Supply Voltage / Vsup (V): 1.5
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Power Supplies (V): 1.5
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