DDR3 DRAM MODULE DRAM 122

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
KVR16S11/8	Kingston Technology Company	DDR3 DRAM MODULE	OTHER	204	DIMM		RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		NO	COMMON	1.5		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30 mm	800 MHz			68719476736 bit	1.425 V					67.6 mm
M378B5773CH0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1680 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	260	.096 Amp		133.35 mm	.255 ns
M378B5273CH0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2000 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX64	512M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	260	.192 Amp		133.35 mm	.255 ns
M471B2873GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	134217728 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	533 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH		.08 Amp		67.6 mm	.6 ns
M391B5273CH0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1800 mA	536870912 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	260			133.35 mm	.3 ns
M378B5673GB0-K00	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		256MX64	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				17179869184 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.225 ns
M392B2G70AM0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	533 MHz		Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH	260			133.35 mm	.3 ns
M471B5273BH1-CF8	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2160 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	512MX64	512M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V		533 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	260	.192 Amp			.255 ns
M471B5673GB0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1160 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	667 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		.16 Amp		67.6 mm	.6 ns
M391B5673GB0-MA0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		256MX72	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				19327352832 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.195 ns
M391B5673GB0-K00	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		256MX72	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				19327352832 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.225 ns
M378B5273CH0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1600 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX64	512M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	260	.192 Amp		133.35 mm	.3 ns
M391B2873GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	945 mA	134217728 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	9663676416 bit	1.425 V	AUTO/SELF REFRESH	260	.09 Amp		133.35 mm	.3 ns
M391B2873GB0-H90	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		128MX72	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				9663676416 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.255 ns
M392B2G70AM0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		2147483648 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	667 MHz		Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH	260			133.35 mm	.255 ns
M391B5673GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH		.18 Amp		133.35 mm	.3 ns
M391B5273CH0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2205 mA	536870912 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel	DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	667 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	260			133.35 mm	.255 ns
M392B2G73AM0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2740 mA	2147483648 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	533 MHz		Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH	260			133.35 mm	.3 ns
M471B5273BH1-CH9	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	512MX64	512M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V		667 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	260	.192 Amp			.3 ns
M378B2873GB0-H90	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		128MX64	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				8589934592 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.255 ns
M378B5673GB0-H90	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		256MX64	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				17179869184 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.255 ns
M391B5673GB0-H90	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		256MX72	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				19327352832 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.255 ns
M471B5673GB0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1200 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	800 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		.16 Amp		67.6 mm	.6 ns
M471B5673GB0-CMA	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1280 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	933 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		.16 Amp		67.6 mm	.6 ns
M471B2873GB0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1080 mA	134217728 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	800 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH		.08 Amp		67.6 mm	.6 ns
M378B5673GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	260	.16 Amp		133.35 mm	.3 ns
M378B2873GB0-MA0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		128MX64	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				8589934592 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.195 ns
M391B2873GB0-MA0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		128MX72	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				9663676416 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.195 ns
M391B5773CH0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1890 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	260	.108 Amp		133.35 mm	.255 ns
M471B5673GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	960 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH		.16 Amp		67.6 mm	.6 ns
M378B5273CH0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1960 mA	536870912 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	512MX64	512M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	667 MHz		Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	260	.192 Amp		133.35 mm	.255 ns
M391B2873GB0-K00	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		128MX72	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				9663676416 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.225 ns
M378B2873GB0-K00	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		128MX64	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				8589934592 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.225 ns
M471B2873GB0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1040 mA	134217728 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	667 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH		.08 Amp		67.6 mm	.6 ns
M378B5773CH0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1360 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	260	.096 Amp		133.35 mm	.3 ns
M391B5773CH0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1935 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	260	.108 Amp		133.35 mm	.255 ns
M391B5273CH0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2250 mA	536870912 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	512MX72	512M	0 Cel	DUAL	1	R-XDMA-N240	2	1.575 V	30.15 mm	800 MHz		Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH	260			133.35 mm	.255 ns
M378B5773CH0-CK0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1720 mA	268435456 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	256MX64	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	800 MHz		Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	260	.096 Amp		133.35 mm	.255 ns
M391B5773CH0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1530 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH	260	.108 Amp		133.35 mm	.3 ns
M471B2873GB0-CMA	Samsung	DDR3 DRAM MODULE	OTHER	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1120 mA	134217728 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	95 Cel	3-STATE	128MX64	128M	0 Cel	DUAL	1	R-XDMA-N204		1.575 V	30.15 mm	933 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH		.08 Amp		67.6 mm	.6 ns
M378B5673GB0-MA0	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	95 Cel		256MX64	256M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm				17179869184 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm	.195 ns
M392B2G73AM0-CH9	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	MULTI BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3230 mA	2147483648 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	2GX72	2G	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	18.9 mm	667 MHz		Not Qualified	154618822656 bit	1.425 V	AUTO/SELF REFRESH	260			133.35 mm	.255 ns
M378B2873GB0-CF8	Samsung	DDR3 DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	840 mA	134217728 words		YES	COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	95 Cel	3-STATE	128MX64	128M	0 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.15 mm	533 MHz		Not Qualified	8589934592 bit	1.425 V	AUTO/SELF REFRESH	260	.08 Amp		133.35 mm	.3 ns
MT18JSF25672AZIZ-1G6XX	Micron Technology	DDR3 DRAM MODULE		240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words	8	YES	COMMON	1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm	800 MHz	4 mm		19327352832 bit	1.425 V	SELF REFRESH; WD-MAX			8	133.35 mm
MT18JSF51272AIZ-80CXX	Micron Technology	DDR3 DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm
MT18JSF51272AIZ-1G4XX	Micron Technology	DDR3 DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		512MX72	512M	-40 Cel	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	38654705664 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm
MT9KSF12872PY-80BA1	Micron Technology	DDR3 DRAM MODULE		240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		134217728 words	8		COMMON	1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel	DUAL	1	R-XDMA-N240		1.4175 V	30.5 mm	400 MHz	4 mm		9663676416 bit	1.2825 V	WD-MAX			8	133.35 mm
MT18JSF25672AIZ-1G1XX	Micron Technology	DDR3 DRAM MODULE	INDUSTRIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	-40 Cel	DUAL	1	R-XDMA-N240		1.575 V	4 mm		30.175 mm	Not Qualified	19327352832 bit	1.425 V	AUTO/SELF REFRESH				133.35 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.