Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | Terminal Finish | Terminal Position | No. of Ports | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Interleaved Burst Length | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
7.25 mm |
Not Qualified |
77309411328 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
|||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
800 MHz |
4 mm |
77309411328 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
4 mm |
77309411328 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
667 MHz |
4 mm |
77309411328 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
534.7 MHz |
4 mm |
38654705664 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
1GX72 |
1G |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
800 MHz |
4 mm |
77309411328 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
256MX72 |
256M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
800 MHz |
4 mm |
19327352832 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
512MX72 |
512M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
512MX72 |
512M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
8 |
COMMON |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.4175 V |
30.5 mm |
400 MHz |
4 mm |
9663676416 bit |
1.2825 V |
WD-MAX |
8 |
133.35 mm |
|||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
256MX72 |
256M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
7.25 mm |
77309411328 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
256MX72 |
256M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
4 mm |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
8580 mA |
4294967296 words |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
1 mm |
95 Cel |
4GX72 |
4G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.35 mm |
8.5 mm |
309237645312 bit |
1.425 V |
.72 Amp |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
8 |
COMMON |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.4175 V |
30.5 mm |
534.7 MHz |
4 mm |
9663676416 bit |
1.2825 V |
WD-MAX |
8 |
133.35 mm |
|||||||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
873 mA |
1073741824 words |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
1 mm |
95 Cel |
1GX72 |
1G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30 mm |
4 mm |
77309411328 bit |
1.425 V |
AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX |
.576 Amp |
133.35 mm |
1896 ns |
||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
512MX72 |
512M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
512MX72 |
512M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
4 mm |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
256MX72 |
256M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
534.7 MHz |
4 mm |
19327352832 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
4 mm |
77309411328 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512MX72 |
512M |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
7.25 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
|||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
4 mm |
77309411328 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
8 |
COMMON |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128MX72 |
128M |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.4175 V |
30.5 mm |
534.7 MHz |
4 mm |
Not Qualified |
9663676416 bit |
1.2825 V |
WD-MAX |
e4 |
8 |
133.35 mm |
||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
YES |
COMMON |
1.5 |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
70 Cel |
3-STATE |
1GX72 |
1G |
0 Cel |
Gold (Au) |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
667 MHz |
7.25 mm |
Not Qualified |
77309411328 bit |
1.425 V |
AUTO/SELF REFRESH; WD-MAX |
e4 |
133.35 mm |
||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
9020 mA |
4294967296 words |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
1 mm |
95 Cel |
4GX72 |
4G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.35 mm |
8.5 mm |
309237645312 bit |
1.425 V |
.75 Amp |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
256MX72 |
256M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
512MX72 |
512M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
256MX72 |
256M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1073741824 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
1GX72 |
1G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
534.7 MHz |
4 mm |
77309411328 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
9600 mA |
4294967296 words |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
1 mm |
95 Cel |
4GX72 |
4G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.35 mm |
8.5 mm |
309237645312 bit |
1.425 V |
.79 Amp |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
8 |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
512MX72 |
512M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.5 mm |
534.7 MHz |
4 mm |
38654705664 bit |
1.425 V |
SELF REFRESH; WD-MAX |
8 |
133.35 mm |
||||||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
8580 mA |
4294967296 words |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
1 mm |
95 Cel |
4GX72 |
4G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.35 mm |
8.5 mm |
309237645312 bit |
1.425 V |
.72 Amp |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
134217728 words |
8 |
COMMON |
1.35 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
128MX72 |
128M |
0 Cel |
GOLD |
DUAL |
1 |
R-XDMA-N240 |
1.4175 V |
30.5 mm |
400 MHz |
4 mm |
Not Qualified |
9663676416 bit |
1.2825 V |
WD-MAX |
e4 |
8 |
133.35 mm |
||||||||||||||||||||
|
Micron Technology |
DDR3 DRAM MODULE |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
FOUR BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
8580 mA |
4294967296 words |
YES |
COMMON |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
1 mm |
95 Cel |
4GX72 |
4G |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
30.35 mm |
8.5 mm |
309237645312 bit |
1.425 V |
.72 Amp |
133.35 mm |
||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
256MX72 |
256M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
INDUSTRIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
536870912 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
85 Cel |
512MX72 |
512M |
-40 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
38654705664 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
|||||||||||||||||||||||||||
Micron Technology |
DDR3 DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
RECTANGULAR |
UNSPECIFIED |
DUAL BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
268435456 words |
YES |
1.5 |
72 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
256MX72 |
256M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.575 V |
4 mm |
30.175 mm |
Not Qualified |
19327352832 bit |
1.425 V |
AUTO/SELF REFRESH |
133.35 mm |
DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.
DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.
DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.
There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.
One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.