DDR3L DRAM DRAM 768

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41K512M4DA-187EIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K1G16DGA-125:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX16	1G		0 Cel		BOTTOM	1	R-PBGA-B96		1.425 V	1.2 mm		9.5 mm		17179869184 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K1G8THE-187E:D	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		8589934592 bit	1.283 V	SELF REFRESH	e1	30	260			12 mm
MT41K256M8DA-107AAT:K	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	182 mA	268435456 words	8	YES	COMMON	1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel	3-STATE	256MX8	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	934 MHz	8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	10.5 mm
MT41K512M4DA-15E:H	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1					10.5 mm
MT41K64M16JT-107IT:G	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K1G4RH-107	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX4	1G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm
MT41K256M8DA-107AIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX8	256M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K256M8DA-107:M	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K512M8RH-125AAT	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		524288 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512KX8	512K				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4194304 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.5 mm
MT41K1G4RA-107M:D	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						12 mm
MT41K512M16TNA-15EM:E	Micron Technology	DDR3L DRAM	COMMERCIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	101 mA	536870912 words		YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel		512MX16	512M	1.283 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	666.66 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K1G4RA-187EIT:D	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX4	1G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						12 mm
MT41K1G8TRF-125:D	Micron Technology	DDR3L DRAM
MT41K128M16-187E	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX16	128M				BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH						14 mm	2.5 ns
MT41K2G4SN-125:A	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2GX4	2G		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K2G4THE-187EIT:D	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			2GX4	2G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		8589934592 bit	1.283 V	SELF REFRESH						12 mm
MT41K128M8JP-125:G	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX8	128M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41K64M16JT-125:F	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					14 mm
MT41K1G4RA-125	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX4	1G			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1					12 mm
MT41K1G8THE-107IT:D	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX8	1G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		8589934592 bit	1.283 V	SELF REFRESH						12 mm
MT41K16M16JT-15E:K	Micron Technology	DDR3L DRAM
MT41K256M8DA-107IT:M	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			10.5 mm
MT41K1G4THV-15E:M	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	SELF REFRESH						11.5 mm
MT41K512M8THV-187E:M	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	SELF REFRESH						11.5 mm
MT41K1G4RH-187E:E	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX4	1G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K1G4DA-107:P	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K256M8DA-15EIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K512M4DA-125IT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			10.5 mm
MT41K256M8DA-107:KTR	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX8	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			10.5 mm
MT41K1G8THE-125IT:D	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX8	1G				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		8589934592 bit	1.283 V	SELF REFRESH						12 mm
MT41K512M8RA-125IT:D	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						12 mm
MT41K512M4-187E	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1					11.5 mm	1.5 ns
MT41K512M16TNA-187EIT:E	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel		512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.425 V	1.2 mm	534.75 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K128M16HA-107IT:D	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K1G4DA-107:PTR	Micron Technology	DDR3L DRAM																																														NOT SPECIFIED	NOT SPECIFIED
MT41K256M8HX-187EIT:D	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX8	256M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH						11.5 mm
MT41K512M8RA-125:D	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	290 mA	536870912 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	10.5 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH				.02 Amp	8	12 mm
MT41K512M4HX-107IT:D	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX4	512M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH						11.5 mm
MT41K256M16RE-107M:D	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		10 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1					14 mm
MT41K512M8RA-125M:D	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						12 mm
MT41K512M8RH-187EIT:E	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M				BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K512M8THV-187E:D	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	SELF REFRESH						11.5 mm
MT41K256M16HA-107AAT:E	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M				BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K512M4DA-15E:M	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX4	512M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1					10.5 mm
MT41K512M8THD-125:D	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	SELF REFRESH						11.5 mm
MT41K128M8JP-107IT:G	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41K2G4RKB-107:P	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	163 mA	2147483648 words	8	YES	COMMON	1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel	3-STATE	2GX4	2G		0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	8 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		30	260	.022 Amp	8	10.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.