DDR3L DRAM DRAM 768

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41K256M16TW-107AIT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260	.012 Amp	8	14 mm
MT41K256M16TW-107IT:P	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260			14 mm	20 ns
MT41K256M16TW-107XIT:P	Micron Technology	DDR3L DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY						256MX16	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V					4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1
MT41K256M16TW-107:P/TR	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.5 MHz	8 mm		4294967296 bit	1.283 V		e1	30	260	.012 Amp	8	14 mm
MT41K256M16TW-107:P	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		30	260			14 mm
MT41K256M16TW-107IT:PTR	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		30	260			14 mm	20 ns
MT41K256M16TW-107AAT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel	3-STATE	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1	30	260	.012 Amp	8	14 mm
MT41K128M16JT-125IT:KTR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K128M16JT-125IT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.225 ns
MT41K256M16TW-107AAT:PTR	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel	3-STATE	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1	30	260	.012 Amp	8	14 mm
MT41K128M16JT-125AIT:KTR	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	8 mm		2147483648 bit	1.283 V		e1	30	260	.012 Amp	8	10.5 mm
MT41K128M16JT-125XIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K128M16JT-125AIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm
MT41K128M16JT-125:K	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.225 ns
MT41K128M16JT-125XIT:KTR	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260		8	14 mm
MT41K256M16TW-107AUT:P	Micron Technology	DDR3L DRAM	AUTOMOTIVE	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	147 mA	268435456 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel	3-STATE	256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8	14 mm
MT41K128M16JT-125:KTR	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX16	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K256M16HA-125IT:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	243 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.016 Amp	8	14 mm
MT41K256M16HA-125IT:ETR	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
NT5CC256M16ER-EKI	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT41K512M16HA-125:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY			.8 mm	85 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT41K128M16JT-107:K	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	219 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1			.012 Amp	8	14 mm	.195 ns
MT41K512M16HA-125IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K256M16HA-125IT	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K256M16HA-125:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	243 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.016 Amp	8	14 mm
MT41K128M16JT-125AAT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	134217728 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	105 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm
MT41K256M16HA-125AIT:E	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M			BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K512M16HA-125:ATR	Micron Technology	DDR3L DRAM																															TIN SILVER COPPER													e1
MT41K1G8TRF-125:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	243 mA	1073741824 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX8	1G	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	9.5 mm	Not Qualified	8589934592 bit	1.283 V	SELF REFRESH	e0			.036 Amp	8	11.5 mm	.225 ns
MT41K1G8TRF-125IT:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	243 mA	1073741824 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX8	1G	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	9.5 mm	Not Qualified	8589934592 bit	1.283 V	SELF REFRESH	e0			.036 Amp	8	11.5 mm	.225 ns
MT41K512M16HA-125AIT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K128M16JT-125AUT:K	Micron Technology	DDR3L DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	125 Cel		128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
NT5CC256M16ER-EK	Nanya Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT41K64M16TW-107IT:J	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	219 mA	67108864 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	14 mm	.195 ns
MT41K64M16TW-107:J	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	219 mA	67108864 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M			BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8	14 mm	.195 ns
NT5CC64M16GP-DII	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	200 mA	67108864 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1			.01 Amp	8	13 mm	.225 ns
MT41K256M16TW-093:P	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel		256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1	30	260			14 mm
NT5CC64M16GP-DIH	Nanya Technology	DDR3L DRAM	INDUSTRIAL	96	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	200 mA	67108864 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	8	13 mm	.225 ns
NT5CC64M16GP-DI	Nanya Technology	DDR3L DRAM	OTHER	96	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	200 mA	67108864 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	800 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1			.01 Amp	8	13 mm	.225 ns
MT41K256M16HA-125XIT:E	Micron Technology	DDR3L DRAM		96	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY						256MX16	256M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V					4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260
MT41K64M16TW-107AIT:J	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K64M16TW-107XIT:J	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K512M16HA-125AIT:ATR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
IS43TR16256BL-125KBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	228 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	400 MHz	9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	4,8	13 mm
MT41K256M16HA-125MAIT:E	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M			BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K128M16JT-107:KTR	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	128MX16	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.5 MHz	8 mm		2147483648 bit	1.283 V		e1				8	14 mm
IS43TR16256BL-125KBLI-TR	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	228 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.028 Amp	4,8	13 mm
MT41K256M16HA-125M:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	239 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.225 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.